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公开(公告)号：US4516144A
公开(公告)日：1985-05-07
申请号：US421942
申请日：1982-09-23
申请人： Stanley V. Jaskolski , Herman P. Schutten , Gordon B. Spellman , Jan K. Sedivy , Maurice W. Jensen
发明人： Stanley V. Jaskolski , Herman P. Schutten , Gordon B. Spellman , Jan K. Sedivy , Maurice W. Jensen
CPC分类号： H01L43/065
摘要： A Hall effect semiconductor device is provided with means for clipping or focusing emitted carriers to form a centralized columnated beam, and trimming means for accurately controlling the amount of magnetic deflection due to Lorentz force. Emitters from an emitter region travel through a base region under influence of an externally applied drift field toward a pair of spaced collector regions. The polarity of a perpendicularly applied magnetic field determines deflection of the carriers toward one or the other of the collector regions. The columnating means comprises a pair of spaced auxiliary collector regions intermediate the emitter region and the primary collector regions for collecting carriers not within a central angle or cone. A columnated beam is provided by carriers passing between the auxiliary collectors within the central angle or cone. Trimming of the beam is provided by a selectable electric field applied in the same direction as deflection of the carriers to thus control the amount of beam deflection and insure that the beam is directed toward the one or other primary collector.
摘要翻译： 霍尔效应半导体器件设置有用于限制或聚焦发射的载流子以形成集中的柱状光束的装置，以及用于精确地控制由洛伦兹力引起的磁偏转量的修整装置。 来自发射极区域的发射体在外部施加的漂移场的影响下穿过基极区域朝向一对间隔开的收集器区域。 垂直施加的磁场的极性决定了载流子朝向收集器区域中的一个或另一个的偏转。 柱形装置包括在发射极区域和初级收集器区域之间的一对间隔的辅助收集器区域，用于收集不在中心角或锥体内的载体。 柱状梁由位于中心角或锥体内的辅助收集器之间的载体提供。 通过沿与载体的偏转相同的方向施加的可选择的电场来提供光束的修整，从而控制光束偏转的量并且确保光束被引向一个或另一个主要收集器。
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公开(公告)号：US4398205A
公开(公告)日：1983-08-09
申请号：US184688
申请日：1980-09-08
IPC分类号： H01L29/744 , H01L29/74
CPC分类号： H01L29/744
摘要： A gate turn-off device is disclosed having a load current carrying power transistor regeneratively collector-base coupled with another transistor, and includes a third, shunting transistor providing high gain turn-off. The device is turned ON by signal current of one polarity applied to the base of the power transistor driving the latter into conduction to carry load current, and the device remains ON upon removal of the signal due to base drive supplied by the collector of the other transistor in the regenerative loop. A third transistor is connected to one of the collector-base junctions to shuntingly break the regenerative loop when the third transistor is biased into conduction, thus providing higher gain turn-off. A single ON-OFF control terminal is disclosed, as well as separate ON and OFF control terminals.
摘要翻译： 公开了具有负载电流承载功率晶体管的栅极关断装置，其与另一晶体管再生集电极基极耦合，并且包括提供高增益关断的第三分流晶体管。 该器件由施加到功率晶体管的基极的一个极性的信号电流导通，驱动器将其驱动为导通以承载负载电流，并且由于由另一个的集电极提供的基极驱动而导致的信号消除而导致该装置保持导通 晶体管在再生回路中。 当第三晶体管被偏置为导通时，第三晶体管连接到集电极 - 基极结之一以便分流再生环路，从而提供更高的增益关断。 公开了单个ON-OFF控制端子，以及单独的ON和OFF控制端子。
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公开(公告)号：US4295058A
公开(公告)日：1981-10-13
申请号：US46568
申请日：1979-06-07
申请人： Robert W. Lade , Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , James R. Jaeschke
发明人： Robert W. Lade , Gordon B. Spellman , Stanley V. Jaskolski , Herman P. Schutten , James R. Jaeschke
IPC分类号： H03K17/13 , H03K17/79 , H03K17/94 , H03K17/72 , H03K17/687
CPC分类号： H03K17/79 , H03K17/136 , H03K17/941 , Y10S136/293 , Y10T307/773
摘要： Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered into conduction solely by a small amount of radiant energy, without the need for a second triggering energy source, and which also affords immunity to unwanted dv/dt and temperature induced turn-on. Various modes of operation are disclosed, including the thyristor self-triggering into conduction, and/or being of the light-activated type itself and being directly triggered by impinging light, and/or being triggered by the light-responsive diode bias, and/or being triggered by a small bias supplied from a second set of photovoltaic diodes connected to the thyristor gate. Other combinations are disclosed providing zero-cross firing.
摘要翻译： 公开了各种电路和辐射能响应传感器装置的组合，例如连接到源极和漏极连接到晶闸管的栅极和阴极的耗尽型FET的栅极的光伏二极管，以提供半导体开关，其被触发成导通 仅仅通过少量的辐射能量，而不需要第二触发能量源，并且还提供对不需要的dv / dt和温度引起的接通的抗扰性。 公开了各种操作模式，包括晶闸管自触发为导通，和/或具有光激活型本身，并且通过入射光直接触发和/或由光响应二极管偏压触发，和/ 或者由连接到晶闸管门的第二组光伏二极管提供的小偏压触发。 公开了提供零交叉点火的其它组合。
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公开(公告)号：US4536884A
公开(公告)日：1985-08-20
申请号：US420558
申请日：1982-09-20
申请人： Arnold Weiss , Herman P. Schutten , Louis Cartz , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
发明人： Arnold Weiss , Herman P. Schutten , Louis Cartz , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
CPC分类号： H05G2/003 , G03F7/70033 , H05H1/04
摘要： A system is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma is repeatably generated in a first area directly from solid material without exploding the latter. X-rays are generated in a second area by passing high current through the plasma causing radial inward magnetic field pinching. Accurate control and improved intensity performance, and greater flexibility in selection of X-ray emitting materials, are provided by the separation of the plasma generating and the X-ray pinch generating functions. Common electrode structure is provided for plasma generating and for plasma pinching, which common electrode also provides a cylindrical plasma communication passage from the first to the second area, and provides an X-ray emission passage of desired axial orientation.
摘要翻译： 提供了一种用于产生可用于X射线光刻的等离子体夹持X射线的系统。 电离加热的等离子体可以直接从固体材料在第一区域中重复产生，而不会使后者爆炸。 通过使高电流通过等离子体产生径向向内的磁场夹紧，在第二区域中产生X射线。 通过分离等离子体产生和X射线捏合产生功能，提供精确的控制和改进的强度性能以及选择X射线发射材料的更大灵活性。 提供公共电极结构用于等离子体产生和等离子体夹持，该公共电极还提供从第一区域到第二区域的圆柱形等离子体连通通道，并且提供具有期望轴向取向的X射线发射通道。
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5.发明授权Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path 失效具有非再生功率部分和具有分裂发射路径的横向再生部分的集成门极关闭装置
公开(公告)号：US4213067A
公开(公告)日：1980-07-15
申请号：US972444
申请日：1978-12-22
IPC分类号： H01L29/08 , H01L29/744 , H03K17/73 , H03K17/60 , H01L29/74
CPC分类号： H01L29/744 , H01L29/0821 , H03K17/73
摘要： A gate turn-off device is formed by the integration of a power transistor with a lateral thyristor. The thyristor has a split emission path from its emitter, part of the emitter current completing a regenerative loop to maintain conduction after removal of a gating signal, and the remainder of the emitter current supplying base drive to the power transistor to render the latter conductive. In the ON state of the device, most of the load current flows through the power transistor, with only a small holding current flowing through the thyristor. Because of the low level of holding current, the thyristor is easily turned off by a small negative gating signal, breaking the regenerative loop, thus terminating emitter current whereby there is no base drive for the power transistor and hence the device is OFF.
摘要翻译： 通过将功率晶体管与侧向晶闸管集成来形成栅极关断器件。 晶闸管具有来自其发射极的分裂发射路径，部分发射极电流完成再生环路，以在除去门控信号之后保持导通，而剩余的发射极电流将功率晶体管提供给功率晶体管，以使后者导通。 在器件的ON状态下，大部分负载电流流过功率晶体管，只有少量的保持电流流经晶闸管。 由于保持电流的低电平，晶闸管容易通过小的负选通信号关断，断开再生环路，从而终止发射极电流，因此功率晶体管没有基极驱动，因此器件关断。
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公开(公告)号：US4633492A
公开(公告)日：1986-12-30
申请号：US650903
申请日：1984-09-13
申请人： Arnold Weiss , Herman P. Schutten , Louis Cartz , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
发明人： Arnold Weiss , Herman P. Schutten , Louis Cartz , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
CPC分类号： H05G2/003 , G03F7/70033 , H05H1/04
摘要： A method is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma is repeatably generated in a first area directly from solid material without exploding the latter. X-rays are generated in a second area by passing high current through the plasma causing radial inward magnetic field pinching. Accurate control and improved intensity performance, and greater flexibility in selection of X-ray emitting materials, are provided by the separation of the plasma generating and the X-ray pinch generating functions.
摘要翻译： 提供了用于产生可用于X射线光刻的等离子体夹持X射线的方法。 电离加热的等离子体可以直接从固体材料在第一区域中重复产生，而不会使后者爆炸。 通过使高电流通过等离子体产生径向向内的磁场夹紧，在第二区域中产生X射线。 通过分离等离子体产生和X射线捏合产生功能，提供精确的控制和改进的强度性能以及选择X射线发射材料的更大灵活性。
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7.发明授权Amplified gate thyristor with non-latching amplified control transistors across base layers 失效具有非锁存放大控制晶体管的放大栅极晶闸管跨基极层
公开(公告)号：US4529998A
公开(公告)日：1985-07-16
申请号：US391803
申请日：1982-06-24
CPC分类号： H01L29/7428 , H01L27/0694
摘要： A diode is integrated on a common substrate with a thyristor to form a parasitic transistor in the gate circuit of the thyristor for amplifying gate current thereto. In addition, gate sensitivity is further enhanced by this formation because the injection efficiency across the thyristor anode-base junction is increased, thus reducing the amount of gate current necessary to trigger the thyristor. The diode cathode, diode anode and substrate form an emitter, base and collector, respectively, of the parasitic transistor. The junction formed by the substrate and the thyristor anode region is forward biased and supplies collector current for the parasitic transistor, this junction being inactive with respect to the junction formed by the substrate and the diode anode region. Thus gate current flowing through the diode to the gate of the thyristor is increased by the additional collector current afforded by the parasitic transistor. This parasitic transistor formation enables the use of a shorted-emitter thyristor while also achieving a high degree of gate sensitivity without the usual drawbacks of temperature and dv/dt sensitivity associated with a nonshorted-emitter high gate sensitivity thyristor.
摘要翻译： 二极管集成在具有晶闸管的公共衬底上，以在晶闸管的栅极电路中形成用于放大栅极电流的寄生晶体管。 此外，由于这种形成进一步增强栅极灵敏度，因为跨越晶闸管阳极 - 基极结的注入效率增加，从而减少触发晶闸管所需的栅极电流量。 二极管阴极，二极管阳极和衬底分别形成寄生晶体管的发射极，基极和集电极。 由衬底和晶闸管阳极区形成的结正向偏置，并为寄生晶体管提供集电极电流，该结对于由衬底和二极管阳极区形成的结无效。 因此，通过由寄生晶体管提供的附加集电极电流，流过二极管的栅极电流增加到晶闸管的栅极。 这种寄生晶体管形成使得能够使用短路发射极晶闸管，同时也实现高度的栅极灵敏度，而没有与非发射极高栅极灵敏度晶闸管相关的温度和dv / dt灵敏度的常见缺点。
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公开(公告)号：US4458287A
公开(公告)日：1984-07-03
申请号：US421940
申请日：1982-09-23
IPC分类号： H03K17/08 , H03K17/082 , H02H5/04
CPC分类号： H03K17/0824 , H03K2017/0806
摘要： A power thyristor is provided with a pair of antiseries back to back diode junctions forming an open base transistor thermally coupled to the thyristor and electrically connected between the thyristor gate and cathode. The diode junctions shunt gate current above a given sensed temperature of the power thyristor, for protecting the latter by preventing turn-on thereof. The diode junctions have nonsymmetrical leakage current characteristics to insure protective shunting of forward gate drive in one direction but blocking leakage in the other direction to prevent draining a reverse charged phasing capacitor. The latter is thus charged beginning from the same starting reference point in each cycle whereby to insure accurate phase control in an AC gating system.
摘要翻译： 功率晶闸管具有一对反电容背对背二极管结，形成热耦合到晶闸管的开放式基极晶体管，并电连接在晶闸管栅极和阴极之间。 二极管将电流闸流电流分流到功率晶闸管的给定感测温度以上，以防止其接通。 二极管接头具有非对称的漏电流特性，以确保正向栅极驱动在一个方向上的保护分流，但阻止另一个方向的泄漏，以防止排出反向充电相控电容器。 因此，后者在每个循环中从相同的起始参考点开始充电，从而确保AC选通系统中的精确相位控制。
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9.发明授权Thyristor having widened region of temperature sensitivity with respect to breakover voltage 失效晶闸管相对于转折电压具有加宽的温度敏感区域
公开(公告)号：US4323793A
公开(公告)日：1982-04-06
申请号：US94074
申请日：1979-11-14
申请人： Herman P. Schutten , Stanley V. Jaskolski , Gordon B. Spellman , Robert W. Lade , Michael J. Schutten
发明人： Herman P. Schutten , Stanley V. Jaskolski , Gordon B. Spellman , Robert W. Lade , Michael J. Schutten
IPC分类号： H03K17/72
CPC分类号： H03K17/72
摘要： An external resistance is presented between the gate and cathode of a thermally sensitive thyristor which varies in accordance with a changing voltage applied across the thyristor. The changing voltage sweeps the varying external resistance through its operating range which in turn expands the region of temperature sensitivity with respect to breakover voltage by sweeping the shifting curves of switching temperature vs. gate to cathode resistance for the thyristor. In preferred form, a field effect transistor (FET) (10) is connected between the gate (8) and cathode (4) of the thermally sensitive thyristor (6) and is biased by the same voltage supply applied across the thyristor. The FET presents an external gate to cathode resistance which varies in accordance with the changing bias level on the FET, which is the same changing bias applied across the thyristor. The range of variance of this added external resistance must be between 10,000 ohms and 1 megohm. The breakover voltage of the thyristor can be made to vary slowly with respect to temperature, rather than exhibiting sharp drop in a narrow critical temperature region.
摘要翻译： 在热敏晶闸管的栅极和阴极之间呈现外部电阻，其根据施加在晶闸管上的变化的电压而变化。 变化的电压通过其工作范围扫描变化的外部电阻，通过扫描晶闸管的开关温度与栅极至阴极电阻的移位曲线，从而扩展相对于分解电压的温度灵敏度区域。 在优选形式中，场效应晶体管（FET）（10）连接在热敏晶闸管（6）的栅极（8）和阴极（4）之间，并被施加在晶闸管两端的相同电源施加偏压。 FET呈现外部栅极至阴极电阻，其根据FET上改变的偏置电平而变化，这是跨晶闸管施加的相同的变化偏置。 该外加电阻的方差范围必须在10,000欧姆和1兆欧之间。 可以使晶闸管的转折电压相对于温度变化缓慢，而不是在窄的临界温度区域显示出急剧的下降。
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公开(公告)号：US4185253A
公开(公告)日：1980-01-22
申请号：US946178
申请日：1978-09-27
摘要： A temperature sensitive thyristor is incorporated in a relaxation oscillator to provide active temperature sensing. As temperature decreases, the breakover voltage V.sub.BO of the thyristor increases, and when V.sub.BO becomes greater than the supply voltage, oscillations will cease, thus providing a low temperature alarm point. As temperature increases, V.sub.BO decreases and the amplitude of oscillation diminishes, thus providing a high temperature alarm point. This is a "fail-safe" arrangement because component failure also provides a warning condition (absence of oscillation). Frequency of oscillation may also be sensed as an indication of temperature.
摘要翻译： 温度敏感晶闸管被并入松弛振荡器中以提供有源温度感测。 随着温度的降低，晶闸管的跳变电压VBO增加，当VBO变得大于电源电压时，振荡将停止，从而提供低温报警点。 随着温度升高，VBO减小，振荡幅度减小，从而提供高温报警点。 这是一个“故障安全”的安排，因为组件故障也提供了一个警告条件（没有振荡）。 振动频率也可以被感测为温度的指示。
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