公开(公告)号：US5126028A

公开(公告)日：1992-06-30

申请号：US570943

申请日：1990-08-22

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt ,  Richard C. Edwards ,  Donald A. Messina

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt ,  Richard C. Edwards ,  Donald A. Messina

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3458 ,  H01J2237/3327

摘要： A sputter coating apparatus displays set and alternative machine parameters, entered or calculated from entered or measured data, for selection by the operator. The apparatus performs a sputter coating process to produce sputter coated articles in accordance with the selected machine parameters. Process parameters familiar to the person creating the process, such as desired coating thickness and desired deposition rate, may be entered by the operator. Measured data such as actual coating thickness at a plurality of points on a previously processed wafer may be entered by an operator or automatically measured from a wafer. Alternative machine parameters such as target sputtering power may be entered by an operator or calculated from entered process parameters or measured data. The operator selects and initiates a process in accordance with the selections by entering commands. The machine parameters control separately the sputtering from different regions of the sputtering surface of a one piece sputtering target by alternately energizing different plasmas over the different target regions and energizing the target in accordance with different machine parameters.

摘要翻译： 溅射涂层设备显示由输入或测量数据输入或计算的设置和替代机器参数，以供操作员选择。 该设备执行溅射涂覆工艺以根据所选择的机器参数产生溅射涂覆的物品。 可以由操作者输入创建该过程的人熟悉的工艺参数，例如所需的涂层厚度和所需的沉积速率。 在先前处理的晶片上的多个点处的实际涂层厚度的测量数据可以由操作者输入或者从晶片自动测量。 可以由操作者输入替代的机器参数，例如目标溅射功率，或从输入的过程参数或测量数据计算。 操作人员通过输入命令，根据选择选择并启动进程。 机器参数通过在不同的目标区域上交替地激励不同的等离子体，并根据不同的机器参数对目标进行激励，分别地控制一片溅射靶的溅射表面的不同区域的溅射。

公开(公告)号：US4957605A

公开(公告)日：1990-09-18

申请号：US339308

申请日：1989-04-17

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi ,  Charles Van Nutt

IPC分类号： C23C14/35 ,  C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3458 ,  H01J2237/3327

摘要： A magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion. The operation of different target regions, such as the duty cycles or power levels for such regions, may be separately varied in response to the measurements or otherwise, to maintain uniform substrate coating as the target erodes. The target is thicker under the outer region and has an annular pole piece embedded to reduce the space separating the target erosion regions, and includes means to cool the target and reinforce it against thermal expansion.

公开(公告)号：US5080772A

公开(公告)日：1992-01-14

申请号：US572850

申请日：1990-08-24

申请人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

发明人： Steven D. Hurwitt ,  Israel Wagner ,  Robert Hieronymi

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/345 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/542

摘要： A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

摘要翻译： 偏置溅射涂覆装置设置有阴极靶组件，阴极靶组件具有中心电极，该中心电极可维持在相对于室阳极为负的可调电压电平，而相对于衬底上的阴极电压和偏置电压为正。 该设备用于制造诸如半导体晶片的溅射涂覆制品。 该方法提供了将中心电极上的电压调整到提高衬底上的离子通量分布均匀性的水平。 电极电压通常在-8伏至-20伏的范围内优化。

公开(公告)号：US5130005A

公开(公告)日：1992-07-14

申请号：US626987

申请日：1990-12-13

申请人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

发明人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3497 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455 ,  H01J37/3458

摘要： A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanent or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved. Enclosed in a sealed space behind and in thermal contact with the target nest is the carrier from which the magnets project to facilitate the flow of cooling fluid across the back surface of the nest to cool the target as the carrier rotates.

摘要翻译： 根据溅射需要的材料的量，其半径上的厚度变化的靶被支撑在溅射涂覆装置的腔室中。 位于巢后面的是旋转磁体载体，其在闭合环中布置有永久或电磁条，但优选地是柔性永久磁性材料，其中靠近靶的边缘的部分和靠近但不在目标中心的部分 磁体绕其旋转。 磁环以一极朝向目标边缘横向极化，一个朝向目标中心，使其磁场将围绕目标的边缘封闭在通过目标的等离子体上的磁通道内。 从中心穿过中心的集中磁体支撑中心附近的等离子体，从而在目标中心处引起一些溅射。 与带相邻的其他集中磁体有助于锐化场，从而可以实现期望的溅射分布。 封闭在与目标巢后面并与之接触的密封空间中是磁体突出以承载冷却流体穿过巢背面的载体，以在载体旋转时冷却目标物。

公开(公告)号：US5409590A

公开(公告)日：1995-04-25

申请号：US816137

申请日：1991-12-31

申请人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

发明人： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01J37/3497 ,  H01J2237/3327

摘要： A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanant or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved. Enclosed in a sealed space behind and in thermal contact with the target nest is the carrier from which the magnets project to facilitate the flow of cooling fluid across the back surface of the nest to cool the target as the carrier rotates.

摘要翻译： 根据溅射需要的材料的量，其半径上的厚度变化的靶被支撑在溅射涂覆装置的腔室中。 位于巢后面的是旋转磁体载体，其在密封环中布置有永久或电磁条，但优选地是柔性永久磁性材料，其具有靠近靶的边缘的部分和靠近但不在目标中心的部分 磁体绕其旋转。 磁环以一极朝向目标边缘横向极化，一个朝向目标中心，使其磁场将围绕目标的边缘封闭在通过目标的等离子体上的磁通道内。 从中心穿过中心的集中磁体支撑中心附近的等离子体，从而在目标中心处引起一些溅射。 与带相邻的其他集中磁体有助于锐化场，从而可以实现期望的溅射分布。 封闭在与目标巢后面并与之接触的密封空间是磁体突出的载体，以便于冷却流体跨过巢的后表面流动，以在载体旋转时冷却目标物。

公开(公告)号：US5391281A

公开(公告)日：1995-02-21

申请号：US45368

申请日：1993-04-09

申请人： Robert Hieronymi ,  Steven Hurwitt

发明人： Robert Hieronymi ,  Steven Hurwitt

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/00

CPC分类号： H01J37/32458 ,  H01J37/32623 ,  H01J37/34 ,  H01J37/347 ,  H01J2237/334

摘要： A re-entrant plug structure is disclosed which extends inside a processing chamber containing an ionized plasma in proximity to the plasma to physically displace the ionized plasma and selectively controllably vary concentration of ionized gas particles over the surface of a wafer to be sputter etched which is supported inside the chamber. The variation of concentration of the ionized plasma allows the selectively controllable variation of sputter etch rates on the surface of the wafer. The re-entrant plug structure may be formed as part of the enclosure cover of the processing chamber or may be a separable moveable unit which is inserted into the plasma through an opening in the processing chamber. The re-entrant plug may be of various lengths, diameters and shapes to displace and shape the ionized plasma. In an alternative embodiment of the invention, the plug contains a permanent or electromagnet which further magnetically displaces and shapes the plasma in addition to the physical displacement caused by the re-entrant plug.

摘要翻译： 公开了一种重新插入的插塞结构，其在包含等离子体附近的离子化等离子体的处理室内部延伸以物理地置换离子化的等离子体并且选择性地可控地改变要溅射蚀刻的晶片的表面上的离子化气体的浓度， 支撑在室内。 离子化等离子体的浓度变化允许在晶片表面上的溅射蚀刻速率的选择性可控的变化。 重入插头结构可以形成为处理室的外壳盖的一部分，或者可以是通过处理室中的开口插入到等离子体中的可分离的可移动单元。 重入插头可以具有各种长度，直径和形状以移位和形成电离等离子体。 在本发明的替代实施例中，插头包括永磁体或电磁体，除了由插入件引起的物理位移之外，还进一步对等离子体进行磁性取代和成形。

公开(公告)号：US20070209932A1

公开(公告)日：2007-09-13

申请号：US11372517

申请日：2006-03-10

申请人： Piero Sferlazzo ,  Ming Mao ,  Jinliang Chen ,  David Felsenthal ,  Robert Hieronymi ,  Miroslav Eror

发明人： Piero Sferlazzo ,  Ming Mao ,  Jinliang Chen ,  David Felsenthal ,  Robert Hieronymi ,  Miroslav Eror

IPC分类号： C23C14/00

CPC分类号： C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  C23C14/5833

摘要： The present invention relates to a sputter deposition system and to methods of use thereof for processing substrates using planetary sputter deposition methods. The sputter deposition system includes a deposition chamber having an azimuthal axis. A rotatable member is situated in the chamber and includes a plurality of magnetrons provided thereon. Each magnetron includes a corresponding one of a plurality of sputtering targets. The rotatable member is configured to position each of the magnetrons to direct sputtered material from the corresponding one of the sputtering targets to a deposition zone defined in the deposition chamber. A transport mechanism is situated in the deposition chamber and includes an arm rotatable about the azimuthal axis. A substrate holder is attached to the arm of the transport mechanism and supports the substrate as the arm rotates the substrate holder to intersect the deposition zone for depositing sputtered material on the substrate.

摘要翻译： 溅射沉积系统技术领域本发明涉及一种溅射沉积系统及其使用方法，用于使用行星式溅射沉积方法来处理衬底 溅射沉积系统包括具有方位角轴的沉积室。 可旋转构件位于腔室中并且包括设置在其上的多个磁控管。 每个磁控管包括多个溅射靶中相应的一个。 可旋转构件被构造成定位每个磁控管以将溅射的材料从相应的一个溅射靶引导到在沉积室中限定的沉积区。 输送机构位于沉积室中并且包括可围绕方位轴线旋转的臂。 衬底保持器附接到输送机构的臂上并且当臂旋转衬底保持器以与沉积区相交以在基底上沉积溅射材料时支撑衬底。