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公开(公告)号：US06447633B1
公开(公告)日：2002-09-10
申请号：US09710530
申请日：2000-11-09
IPC分类号： C28F102
CPC分类号： H01L21/6715 , B08B3/04 , H01L21/32134 , H01L21/67017 , H01L21/67051 , H01L21/6708 , Y10S118/90 , Y10S438/906 , Y10S438/913
摘要： A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.
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公开(公告)号：US06692613B2
公开(公告)日：2004-02-17
申请号：US10223974
申请日：2002-08-20
IPC分类号： H01L2348
CPC分类号： H01L21/6715 , B08B3/04 , H01L21/32134 , H01L21/67017 , H01L21/67051 , H01L21/6708 , Y10S118/90 , Y10S438/906 , Y10S438/913
摘要： A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.
摘要翻译： 用于处理半导体晶片或类似物品的方法包括在旋转晶片时旋转晶片并将其施加到晶片的第一侧的步骤。 流体通过离心力在晶片的第一侧上在所有方向上径向向外流动。 当流体从晶片的圆周边缘流出时，其被包含在环形储存器中，使得流体也流到晶片的第二侧的外部环形区域。 开口允许流体从储存器流出。 开口限定分流线的位置，超过该分隔线，流体不会在晶片的第二侧上行进。 用于处理半导体晶片或类似物品的装置包括具有由上下转子形成的处理室的反应器。 晶片支撑在转子之间。 转子由旋转电机旋转。 处理流体在中心位置被引入到晶片的顶表面或底表面上，或在两个表面上。 流体向外均匀地向各个方向流动。 晶片支架自动提升晶片，从而当转子在加工后彼此分离时，可以通过机器人将其从反应器中移除。
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公开(公告)号：US06423642B1
公开(公告)日：2002-07-23
申请号：US09437711
申请日：1999-11-10
IPC分类号： H01L21311
CPC分类号： H01L21/6715 , B08B3/04 , H01L21/32134 , H01L21/67017 , H01L21/67051 , H01L21/6708 , Y10S118/90 , Y10S438/906 , Y10S438/913
摘要： A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.
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公开(公告)号：US06794291B2
公开(公告)日：2004-09-21
申请号：US10202074
申请日：2002-07-23
IPC分类号： H01L21311
CPC分类号： H01L21/6715 , B08B3/04 , H01L21/32134 , H01L21/67017 , H01L21/67051 , H01L21/6708 , Y10S118/90 , Y10S438/906 , Y10S438/913
摘要： An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.
摘要翻译： 用于处理半导体晶片或类似物品的设备包括具有由上下转子形成的处理室的反应器。 晶片支撑在转子之间。 转子由旋转电机旋转。 处理流体在中心位置被引入到晶片的顶表面或底表面上，或在两个表面上。 流体向外均匀地向各个方向流动。 晶片支架自动提升晶片，从而当转子在加工后彼此分离时，它可以由机器人从反应器中移出。
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公开(公告)号：US06413436B1
公开(公告)日：2002-07-02
申请号：US09437926
申请日：1999-11-10
申请人： Brian Aegerter , Curt T. Dundas , Michael Jolley , Tom L. Ritzdorf , Steven L. Peace , Gary L. Curtis , Raymon F. Thompson
发明人： Brian Aegerter , Curt T. Dundas , Michael Jolley , Tom L. Ritzdorf , Steven L. Peace , Gary L. Curtis , Raymon F. Thompson
IPC分类号： C23F102
CPC分类号： H01L21/67017 , C23F1/18 , H01L21/32134 , H01L21/6708 , Y10S438/928 , Y10S438/963
摘要： In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
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公开(公告)号：US07399713B2
公开(公告)日：2008-07-15
申请号：US10632495
申请日：2003-07-31
申请人： Brian K. Aegerter , Curt T. Dundas , Tom L. Ritzdorf , Gary L. Curtis , Michael Jolley , Steven L. Peace
发明人： Brian K. Aegerter , Curt T. Dundas , Tom L. Ritzdorf , Gary L. Curtis , Michael Jolley , Steven L. Peace
IPC分类号： H01L21/302
CPC分类号： H01L21/6715 , C23F1/18 , C23F1/30 , H01L21/32134 , H01L21/67017 , H01L21/6708 , Y10S134/902 , Y10S438/906
摘要： This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
摘要翻译： 本发明提供了一种用于处理具有前侧，后侧和外周的工件的方法。 根据该过程，从前侧或后侧或工件中的至少一个的外周边缘选择性地施加或排除处理流体。 处理流体的排除和/或应用通过将一种或多种加工流体施加到工件上而发生，因为工件和相应的反应器围绕大致正交于被加工工件的面的中心的旋转轴旋转。 使用一种或多种加工流体的流量，流体压力和/或旋转速率来控制从外周边缘选择性地施加或排除处理流体的程度。
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公开(公告)号：US07429537B2
公开(公告)日：2008-09-30
申请号：US11292823
申请日：2005-12-02
IPC分类号： H01L21/302
CPC分类号： H01L21/67051 , B08B3/02 , H01L21/67028
摘要： A method for rinsing and drying a workpiece includes placing the workpiece into a chamber and spinning the workpiece. A rinsing fluid, such as water, is applied onto the workpiece through a first outlet in the chamber, with the rinsing fluid moving outwardly towards the edge of the workpiece via centrifugal force, to rinse the workpiece. A drying fluid, such as an alcohol vapor, is applied onto the workpiece through the first outlet, with the drying fluid moving outwardly towards the edge of the workpiece via centrifugal force, to dry the workpiece. The drying fluid advantageously follows a meniscus of the rinsing fluid across the workpiece surface. The rinsing fluid, or the drying fluid, or both fluids, may be applied near or at a central area of the workpiece.
摘要翻译： 用于冲洗和干燥工件的方法包括将工件放置在室中并旋转工件。 冲洗流体例如水通过腔室中的第一出口施加到工件上，漂洗流体通过离心力向外移动到工件的边缘，以冲洗工件。 干燥流体，例如醇蒸汽，通过第一出口施加到工件上，干燥流体通过离心力向外移动到工件的边缘，以干燥工件。 干燥流体有利地沿着穿过工件表面的冲洗流体的弯液面。 冲洗流体或干燥流体或两种流体可以施加在工件的中心区域附近或其附近。
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公开(公告)号：US06632292B1
公开(公告)日：2003-10-14
申请号：US09672572
申请日：2000-09-28
IPC分类号： B08B700
CPC分类号： H01L21/6715 , C23F1/18 , C23F1/30 , H01L21/32134 , H01L21/67017 , H01L21/6708 , Y10S134/902 , Y10S438/906
摘要： This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
摘要翻译： 本发明提供了一种用于处理具有前侧，后侧和外周的工件的方法。 根据该过程，从前侧或后侧或工件中的至少一个的外周边缘选择性地施加或排除处理流体。 处理流体的排除和/或应用通过将一种或多种加工流体施加到工件上而发生，因为工件和相应的反应器围绕大致正交于被加工工件的面的中心的旋转轴旋转。 使用一种或多种加工流体的流量，流体压力和/或旋转速率来控制从外周边缘选择性地施加或排除处理流体的程度。
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