摘要:
Exemplary embodiments provide tunable laser devices, methods for making the laser devices and methods for tuning the laser devices. The tunable laser devices can include an optically pumped semiconductor laser heterostructure, on which a distributed-feedback (DFB) laser grating having variable grating spacings (or chirps) can be formed. The optically pumped semiconductor laser heterostructure can be an optically pumped type-II quantum well laser structure. The emission wavelength of the tunable laser devices can be tuned by changing positions of the region illuminated by the pump laser and with respect to the chirped DFB grating. The disclosed laser devices and methods can provide tunable laser emission with a combination of narrow linewidth and high output power that can be used for remote sensing applications and/or spectroscopic applications across the entire mid infrared (IR) spectral region.
摘要:
Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.
摘要:
In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.
摘要:
In accordance with the aspects of the present disclosure, a method and apparatus is disclosed for three-dimensional imaging interferometric microscopy (IIM), which can use at least two wavelengths to image a three-dimensional object. The apparatus can include a first, a second, and a third optical system. The first optical system is disposed to provide a substantially coherent illumination to the 3D object, wherein the illumination is characterized by a plurality of wavelengths. The second optical system includes an optical image recording device and one or more additional optical components characterized by a numerical aperture NA. The third optical system provides interferometric reintroduction of a portion of the coherent illumination as a reference beam into the second optical system. An image recording device records each sub-image formed as a result of interference between the illumination that is scattered by the 3D object and the reference beam.
摘要:
In accordance with the invention, there are methods for self-aligned spatial frequency doubling in one dimension and also in two dimension. The method for self-aligned spatial frequency doubling in one dimension can include forming a film stack over a substrate, wherein the film stack comprises a photoresist layer and forming a one-dimensional periodic first pattern having a first pitch p on the photoresist layer using an optical exposure, wherein the first pitch p is at least smaller than twice the bandpass limit for optical exposures. The method can also include forming a second pattern using the first pattern by nonlinear processing steps, wherein the second pattern has a second pitch p2=p/2.
摘要翻译:根据本发明,在一维和二维中存在自对准空间倍频的方法。 在一个维度中自对准空间倍频的方法可以包括在衬底上形成膜堆叠,其中膜堆叠包括光致抗蚀剂层并且在光刻胶层上形成具有第一间距p的一维周期性第一图案,使用 光学曝光,其中第一间距p至少小于光学曝光的带通极限的两倍。 该方法还可以包括通过非线性处理步骤使用第一图案形成第二图案,其中第二图案具有第二间距p 2/2 = p / 2。
摘要:
In accordance with the aspects of the present disclosure, a method and apparatus is disclosed for imaging interferometric microscopy (IIM), which can use an immersion medium to enhance resolution up to a resolution of linear systems resolution limit of λ/4n, where λ is the wavelength in free space and n is the index of refraction of a transmission medium.
摘要:
In accordance with the invention, there are methods for self-aligned spatial frequency doubling in one dimension and also in two dimension. The method for self-aligned spatial frequency doubling in one dimension can include forming a film stack over a substrate, wherein the film stack comprises a photoresist layer and forming a one-dimensional periodic first pattern having a first pitch p on the photoresist layer using an optical exposure, wherein the first pitch p is at least smaller than twice the bandpass limit for optical exposures. The method can also include forming a second pattern using the first pattern by nonlinear processing steps, wherein the second pattern has a second pitch p2=p/2.
摘要翻译:根据本发明,在一维和二维中存在自对准空间倍频的方法。 在一个维度中自对准空间倍频的方法可以包括在衬底上形成膜堆叠,其中膜堆叠包括光致抗蚀剂层并且在光刻胶层上形成具有第一间距p的一维周期性第一图案,使用 光学曝光,其中第一间距p至少小于光学曝光的带通极限的两倍。 该方法还可以包括通过非线性处理步骤使用第一图案形成第二图案,其中第二图案具有第二间距p2 = p / 2。