TUNABLE INFRARED LASERS FOR GAS-PHASE SPECTROSCOPY
    1.
    发明申请
    TUNABLE INFRARED LASERS FOR GAS-PHASE SPECTROSCOPY 有权
    用于气相分光光度计的红外激光

    公开(公告)号:US20080240174A1

    公开(公告)日:2008-10-02

    申请号:US12056454

    申请日:2008-03-27

    IPC分类号: H01S3/10

    摘要: Exemplary embodiments provide tunable laser devices, methods for making the laser devices and methods for tuning the laser devices. The tunable laser devices can include an optically pumped semiconductor laser heterostructure, on which a distributed-feedback (DFB) laser grating having variable grating spacings (or chirps) can be formed. The optically pumped semiconductor laser heterostructure can be an optically pumped type-II quantum well laser structure. The emission wavelength of the tunable laser devices can be tuned by changing positions of the region illuminated by the pump laser and with respect to the chirped DFB grating. The disclosed laser devices and methods can provide tunable laser emission with a combination of narrow linewidth and high output power that can be used for remote sensing applications and/or spectroscopic applications across the entire mid infrared (IR) spectral region.

    摘要翻译: 示例性实施例提供可调激光器件,用于制造激光器件的方法和用于调谐激光器件的方法。 可调激光器件可以包括光泵浦的半导体激光异质结构,其上可以形成具有可变光栅间隔(或线性调频脉冲)的分布反馈(DFB)激光光栅。 光泵浦半导体激光异质结构可以是光泵浦型II量子阱激光器结构。 可调谐激光器件的发射波长可以通过改变由泵激光器照射的区域和相对于啁啾DFB光栅的位置来调节。 所公开的激光器件和方法可以提供具有窄线宽和高输出功率的组合的可调谐激光发射,其可用于整个中红外(IR)光谱区域的遥感应用和/或光谱应用。

    Methods and apparatus for lithography of sparse arrays of sub-micrometer
features
    2.
    发明授权
    Methods and apparatus for lithography of sparse arrays of sub-micrometer features 失效
    亚微米特征稀疏阵列光刻的方法和装置

    公开(公告)号:US5759744A

    公开(公告)日:1998-06-02

    申请号:US407067

    申请日:1995-03-16

    IPC分类号: G03F7/20 G03F7/22

    CPC分类号: G03F7/70408 G03F7/70466

    摘要: Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

    摘要翻译: 公开了用于暴露具有1:3或更大的线:空间比的稀疏孔和/或台面阵列的方法和装置,并且在分层材料的顶层中的感光材料层中的亚微米孔和/或台面直径。 公开的方法包括:双曝光干涉光刻对,其中仅每个单周期曝光对的重叠最大值附近的区域接收清除曝光剂量; 双重干涉光刻曝光对,其具有附加处理步骤,以将阵列从第一单周期干涉光刻曝光对转移到中间掩模层和第二单周期干涉光刻曝光中,以进一步选择第一阵列孔的子集; 单周期干涉光刻曝光对的双重曝光以限定亚微米孔的密集阵列和光学曝光曝光,其中只有两个曝光的最大值附近的那些孔接收清除曝光剂量; 单周期干涉曝光对的组合,将所产生的紧密阵列的亚微米孔转移到中间蚀刻掩模中的处理,以及光学曝光以选择初始阵列的子集以形成稀疏阵列; 光学曝光的组合,曝光图案转印到中间掩模层中,以及单周期干涉光刻曝光对; 三光束干涉曝光对形成亚微米孔的稀疏阵列; 五光束和四光束干涉曝光以在单次曝光中形成稀疏阵列的亚微米孔。 公开的装置包括用于三光束,五光束和四光束干涉曝光的布置。

    Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
    4.
    发明授权
    Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy 有权
    用于成像干涉显微镜扩展的结构照明和ev逝耦合

    公开(公告)号:US09541374B2

    公开(公告)日:2017-01-10

    申请号:US14230582

    申请日:2014-03-31

    摘要: In accordance with the aspects of the present disclosure, a method and apparatus is disclosed for three-dimensional imaging interferometric microscopy (IIM), which can use at least two wavelengths to image a three-dimensional object. The apparatus can include a first, a second, and a third optical system. The first optical system is disposed to provide a substantially coherent illumination to the 3D object, wherein the illumination is characterized by a plurality of wavelengths. The second optical system includes an optical image recording device and one or more additional optical components characterized by a numerical aperture NA. The third optical system provides interferometric reintroduction of a portion of the coherent illumination as a reference beam into the second optical system. An image recording device records each sub-image formed as a result of interference between the illumination that is scattered by the 3D object and the reference beam.

    摘要翻译: 根据本公开的方面,公开了用于三维成像干涉显微镜(IIM)的方法和装置,其可以使用至少两个波长来成像三维物体。 该装置可以包括第一,第二和第三光学系统。 第一光学系统设置成向3D对象提供基本相干的照明,其中照明由多个波长表征。 第二光学系统包括光学图像记录装置和由数值孔径NA表征的一个或多个附加光学部件。 第三光学系统将相干照明的一部分的干涉重新引入作为参考光束进入第二光学系统。 图像记录装置记录由作为3D对象散射的照明与参照光束之间的干涉而形成的各子图像。

    SELF-ALIGNED SPATIAL FREQUENCY DOUBLING
    5.
    发明申请
    SELF-ALIGNED SPATIAL FREQUENCY DOUBLING 有权
    自对准空间频率双重

    公开(公告)号:US20080057445A1

    公开(公告)日:2008-03-06

    申请号:US11849126

    申请日:2007-08-31

    IPC分类号: G03C5/00

    摘要: In accordance with the invention, there are methods for self-aligned spatial frequency doubling in one dimension and also in two dimension. The method for self-aligned spatial frequency doubling in one dimension can include forming a film stack over a substrate, wherein the film stack comprises a photoresist layer and forming a one-dimensional periodic first pattern having a first pitch p on the photoresist layer using an optical exposure, wherein the first pitch p is at least smaller than twice the bandpass limit for optical exposures. The method can also include forming a second pattern using the first pattern by nonlinear processing steps, wherein the second pattern has a second pitch p2=p/2.

    摘要翻译: 根据本发明,在一维和二维中存在自对准空间倍频的方法。 在一个维度中自对准空间倍频的方法可以包括在衬底上形成膜堆叠,其中膜堆叠包括光致抗蚀剂层并且在光刻胶层上形成具有第一间距p的一维周期性第一图案,使用 光学曝光,其中第一间距p至少小于光学曝光的带通极限的两倍。 该方法还可以包括通过非线性处理步骤使用第一图案形成第二图案,其中第二图案具有第二间距p 2/2 = p / 2。

    SELF-ALIGNED SPATIAL FREQUENCY DOUBLING
    7.
    发明申请
    SELF-ALIGNED SPATIAL FREQUENCY DOUBLING 有权
    自对准空间频率双重

    公开(公告)号:US20110127235A1

    公开(公告)日:2011-06-02

    申请号:US13022740

    申请日:2011-02-08

    IPC分类号: B32B38/06

    摘要: In accordance with the invention, there are methods for self-aligned spatial frequency doubling in one dimension and also in two dimension. The method for self-aligned spatial frequency doubling in one dimension can include forming a film stack over a substrate, wherein the film stack comprises a photoresist layer and forming a one-dimensional periodic first pattern having a first pitch p on the photoresist layer using an optical exposure, wherein the first pitch p is at least smaller than twice the bandpass limit for optical exposures. The method can also include forming a second pattern using the first pattern by nonlinear processing steps, wherein the second pattern has a second pitch p2=p/2.

    摘要翻译: 根据本发明,在一维和二维中存在自对准空间倍频的方法。 在一个维度中自对准空间倍频的方法可以包括在衬底上形成膜堆叠,其中膜堆叠包括光致抗蚀剂层并且在光刻胶层上形成具有第一间距p的一维周期性第一图案,使用 光学曝光,其中第一间距p至少小于光学曝光的带通极限的两倍。 该方法还可以包括通过非线性处理步骤使用第一图案形成第二图案,其中第二图案具有第二间距p2 = p / 2。