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公开(公告)号：US5525162A
公开(公告)日：1996-06-11
申请号：US494750
申请日：1995-06-26
CPC分类号： H01L35/16
摘要： A technique for forming from staring precursors at the molecular level, a sultant thermoelectric material with a reduced thermal conductivity. All staring precursors are dissolved in solution, reduced to remove oxygen, and then combined into a single solution to yield specific stoichiometric ratios. A sol and then a gel is formed, which supercritical solvent extraction is performed upon so as to yield a material having two level porosity and a maximum of a factor of three reduction in thermal conductivity.
摘要翻译： 在分子水平上从凝视前体形成的技术，所得到的导热性降低的热电材料。 将所有起始前体溶解在溶液中，还原以除去氧，然后合并成单一溶液以产生特定的化学计量比。 形成溶胶，然后形成凝胶，进行超临界溶剂萃取，以产生具有两个水平孔隙率和最大导热系数降低三倍的材料。
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2.发明授权Nanoporous semiconductor material and fabrication technique for use as thermoelectric elements 失效纳米多孔半导体材料和用作热电元件的制造技术
公开(公告)号：US5834828A
公开(公告)日：1998-11-10
申请号：US122981
申请日：1993-09-20
CPC分类号： H01L35/34 , H01L35/16 , Y10S257/93
摘要： A nanoporous semiconductor material and fabrication technique for use as rmoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm.multidot..degree.K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.
摘要翻译： 用作热电元件的纳米多孔半导体材料和制造技术。 起始前体在溶液中混合，以便彻底溶解，然后还原。 可以在溶液中加入第二相以提供可以随后除去的纳米抗体。 形成纳米多孔半导体，由于由于增强了大约10W / cm×K的声子散射而使晶格热导率大大降低。纳米多孔半导体材料可用作Peltier耦合中的n和p支，用于 热电冷却器，低温冷却器，热电发电机或热电热泵。
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公开(公告)号：US5411599A
公开(公告)日：1995-05-02
申请号：US227741
申请日：1994-04-12
CPC分类号： H01L35/34 , H01L35/16 , Y10S257/93
摘要： A nanoporous semiconductor material and fabrication technique for use as thermoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm.multidot..degree.K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.
摘要翻译： 用作热电元件的纳米多孔半导体材料和制造技术。 起始前体在溶液中混合，以便彻底溶解，然后还原。 可以在溶液中加入第二相以提供可以随后除去的纳米抗体。 形成纳米多孔半导体，由于由于增强了大约10W / cm×K的声子散射而使晶格热导率大大降低。纳米多孔半导体材料可用作Peltier耦合中的n和p支，用于 热电冷却器，低温冷却器，热电发电机或热电热泵。
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公开(公告)号：US06222261B1
公开(公告)日：2001-04-24
申请号：US09303637
申请日：1999-05-03
IPC分类号： H01L23053
CPC分类号： H01L27/14881
摘要： A hybrid microelectronic circuit formed from two or more chips of different electronic materials and having a preformed barrier layer having at least a nanostructured plastic/ceramic layer between the chips and preferably including a thin layer of an aerogel also.
摘要翻译： 由两个或更多个不同电子材料的芯片形成的混合微电子电路，并且具有预先形成的阻挡层，该阻挡层在芯片之间至少具有纳米结构的塑料/陶瓷层，并且优选地还包括薄凝胶层。
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公开(公告)号：US5366802A
公开(公告)日：1994-11-22
申请号：US983903
申请日：1992-12-01
申请人： Elizabeth H. Nelson
发明人： Elizabeth H. Nelson
CPC分类号： H01L37/02 , Y10T428/24926 , Y10T428/26 , Y10T428/265
摘要： An improved infrared detector element and an improved method for manufactng same is provided. A commercially available rough art wafer of ferroelectric material is ion milled under conditions which provide an extremely thin element with a near flawless detection surface.
摘要翻译： 提供了一种改进的红外检测元件及其制造方法。 市售的铁电材料粗糙晶片在提供具有近乎完美的检测表面的极薄元件的条件下被离子研磨。
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公开(公告)号：US5478425A
公开(公告)日：1995-12-26
申请号：US307208
申请日：1994-09-16
申请人： Elizabeth H. Nelson
发明人： Elizabeth H. Nelson
IPC分类号： H01L23/14 , H01L23/498 , B29C39/02 , B29C39/36
CPC分类号： H01L23/145 , H01L23/49894 , H01L2924/0002
摘要： The invention is related to electronic and more specifically to photo-electronic devices manufactured by means of thin film layering techniques. The invention proposes the use of polymer, copolymer, polyamide and similar organic casting materials, in layers 500 to 10,000 angstroms thick, as protective barriers between layers where the processing of one layer would be adversely affected by or would damage an adjacent previously formed layer.
摘要翻译： 本发明涉及电子，更具体地涉及通过薄膜分层技术制造的光电子器件。 本发明提出使用500至10,000埃厚的聚合物，共聚物，聚酰胺和类似的有机浇铸材料作为层之间的保护性障碍，其中一层的加工将受到相邻的先前形成的层的不利影响或将损坏相邻的先前形成的层。
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公开(公告)号：US5300807A
公开(公告)日：1994-04-05
申请号：US823749
申请日：1992-01-22
申请人： Elizabeth H. Nelson
发明人： Elizabeth H. Nelson
IPC分类号： H01L23/14 , H01L23/498 , H01L23/02 , H01L23/12
CPC分类号： H01L23/145 , H01L23/49894 , H01L2924/0002
摘要： The invention is related to electronic and more specifically to photo-electronic devices manufactured by means of thin film layering techniques. The invention proposes the use of polymer, copolymer, polyamide and similar organic casting materials, in layers 500 to 10,000 angstroms thick, as protective barriers between layers where the processing of one layer would be adversely affected by or would damage an adjacent previously formed layer.
摘要翻译： 本发明涉及电子，更具体地涉及通过薄膜分层技术制造的光电子器件。 本发明提出使用500至10,000埃厚的聚合物，共聚物，聚酰胺和类似的有机浇铸材料作为层之间的保护性障碍，其中一层的加工将受到相邻的先前形成的层的不利影响或将损坏相邻的先前形成的层。
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公开(公告)号：US5242537A
公开(公告)日：1993-09-07
申请号：US693470
申请日：1991-04-30
申请人： Elizabeth H. Nelson
发明人： Elizabeth H. Nelson
IPC分类号： H01L37/02
CPC分类号： H01L37/02 , Y10T428/24926 , Y10T428/26 , Y10T428/265
摘要： An improved infrared detector element and an improved method for manufacturing same is provided. A commercially available rough art wafer of ferroelectric material is ion milled under conditions which provide an extremely thin element with a near flawless detection surface.
摘要翻译： 提供了一种改进的红外检测元件及其制造方法。 市售的铁电材料粗糙晶片在提供具有近乎完美的检测表面的极薄元件的条件下被离子研磨。
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