公开(公告)号：US09252181B2

公开(公告)日：2016-02-02

申请号：US13456991

申请日：2012-04-26

申请人： Su Youn Lee ,  Byung Ki Cheong ,  Doo Seok Jeong

发明人： Su Youn Lee ,  Byung Ki Cheong ,  Doo Seok Jeong

IPC分类号： H01L27/146

CPC分类号： H01L27/14647

摘要： A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.

摘要翻译： 公开了彩色图像传感器。 一方面，彩色图像传感器包括：具有位于下电极和上电极之间的下电极，上电极和硫族化物材料的光敏电池; 以及用于基于从感光单元产生的电特性值来测量入射光的波长或强度的图像感测电路。

公开(公告)号：US20130092818A1

公开(公告)日：2013-04-18

申请号：US13456991

申请日：2012-04-26

申请人： Su Youn Lee ,  Byung Ki Cheong ,  Doo Seok Jeong

发明人： Su Youn Lee ,  Byung Ki Cheong ,  Doo Seok Jeong

IPC分类号： H01L27/146

CPC分类号： H01L27/14647

摘要： A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.

摘要翻译： 公开了彩色图像传感器。 一方面，彩色图像传感器包括：具有位于下电极和上电极之间的下电极，上电极和硫族化物材料的光敏电池; 以及用于基于从感光单元产生的电特性值来测量入射光的波长或强度的图像感测电路。

公开(公告)号：US07851778B2

公开(公告)日：2010-12-14

申请号：US11805827

申请日：2007-05-24

申请人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

发明人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

IPC分类号： H01L47/00 ,  H01L21/00

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other,wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

摘要翻译： 本发明涉及一种非挥发性电相变存储器件，其包括衬底，沉积在衬底上的第一层间电介质膜，形成在第一介电层上的底部电极层，形成在底部电极层上的第二层间电介质膜 沉积在第二层间电介质膜上的相变材料层和形成在所述相变材料层上的顶部电极层，所述底部电极层通过形成在所述相变材料层中的接触孔与所述相变材料层接触， 第二层间电介质膜，并填充有相变材料或底部电极材料，使得相变层和底部电极层彼此紧密接触，其中界面控制层形成在接触孔的界面处， 相变层和底部电极层，所述界面控制层具有强的作用 与相变材料的化学键以及电阻率和热导率值低于底部电极材料。

公开(公告)号：US20070272987A1

公开(公告)日：2007-11-29

申请号：US11805827

申请日：2007-05-24

申请人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

发明人： Dae-Hwan Kang ,  In-Ho Kim ,  Byung Ki Cheong ,  Jeung-Hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim ,  Ki-Bum Kim

IPC分类号： H01L29/76 ,  H01L29/00

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

摘要： The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

摘要翻译： 本发明涉及一种非挥发性电相变存储器件，其包括衬底，沉积在衬底上的第一层间电介质膜，形成在第一介电层上的底部电极层，形成在底部电极层上的第二层间电介质膜 沉积在第二层间电介质膜上的相变材料层和形成在所述相变材料层上的顶部电极层，所述底部电极层通过形成在所述相变材料层中的接触孔与所述相变材料层接触， 第二层间电介质膜，并填充有相变材料或底部电极材料，使得相变层和底部电极层彼此紧密接触，其中界面控制层形成在接触孔的界面处， 相变层和底部电极层，所述界面控制层具有强的作用 与相变材料的化学键以及电阻率和热导率值低于底部电极材料。

公开(公告)号：US08786859B2

公开(公告)日：2014-07-22

申请号：US12534497

申请日：2009-08-03

申请人： Kyeong Seok Lee ,  Won Mok Kim ,  Taek Sung Lee ,  Byung Ki Cheong

发明人： Kyeong Seok Lee ,  Won Mok Kim ,  Taek Sung Lee ,  Byung Ki Cheong

IPC分类号： G01N21/55

CPC分类号： G01N21/553

摘要： Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.

摘要翻译： 提供了一种表面等离子体共振传感器，包括：传递信号光束入射的光的一部分，以产生渐逝场; 以及激发表面等离子体的一部分，用于通过产生的ev逝场激发表面等离子体激元，并引起表面等离子体共振，其中介电波导层插入在激发表面等离子体激元的一部分的金属层之间，并且表面等离子体共振性质被改变 由待分析的对象。

公开(公告)号：US07940637B2

公开(公告)日：2011-05-10

申请号：US12260509

申请日：2008-10-29

申请人： Wook Yeon Hwang ,  Jooho Kim ,  Jung-Hyeon Kim ,  Taek Sung Lee ,  Byung Ki Cheong ,  Hyun Seok Lee ,  Suyoun Lee ,  Won Mok Kim ,  Jeung-hyun Jeong

发明人： Wook Yeon Hwang ,  Jooho Kim ,  Jung-Hyeon Kim ,  Taek Sung Lee ,  Byung Ki Cheong ,  Hyun Seok Lee ,  Suyoun Lee ,  Won Mok Kim ,  Jeung-hyun Jeong

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/24065 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/259 ,  G11B7/266 ,  G11B2007/24304 ,  G11B2007/24306 ,  G11B2007/2432

摘要： A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

摘要翻译： 超分辨率光记录介质包括形成在基板上的反射层，用于在其上记录信息的记录层，由硫族化物半导体材料制成的超分辨率层，以及层叠在上表面和下表面上的第一和第二介电层 的超分辨率层。 记录层由分解温度高于信息再现温度的材料制成，并且在记录期间不形成气泡记录标记，并且超分辨率层含有一种或多种选自氮，氧， 碳和硼。

公开(公告)号：US20090245079A1

公开(公告)日：2009-10-01

申请号：US12260509

申请日：2008-10-29

申请人： Wook Yeon Hwang ,  Jooho Kim ,  Jung-Hyeon Kim ,  Taek Sung Lee ,  Byung Ki Cheong ,  Hyun Seok Lee ,  Suyoun Lee ,  Won Mok Kim ,  Jeung-hyun Jeong

发明人： Wook Yeon Hwang ,  Jooho Kim ,  Jung-Hyeon Kim ,  Taek Sung Lee ,  Byung Ki Cheong ,  Hyun Seok Lee ,  Suyoun Lee ,  Won Mok Kim ,  Jeung-hyun Jeong

IPC分类号： G11B7/24

CPC分类号： G11B7/252 ,  G11B7/24065 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/259 ,  G11B7/266 ,  G11B2007/24304 ,  G11B2007/24306 ,  G11B2007/2432

摘要： A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

摘要翻译： 超分辨率光记录介质包括形成在基板上的反射层，用于在其上记录信息的记录层，由硫族化物半导体材料制成的超分辨率层，以及层叠在上表面和下表面上的第一和第二介电层 的超分辨率层。 记录层由分解温度高于信息再现温度的材料制成，并且在记录期间不形成气泡记录标记，并且超分辨率层含有一种或多种选自氮，氧， 碳和硼。

公开(公告)号：US06670016B1

公开(公告)日：2003-12-30

申请号：US09721890

申请日：2000-11-24

申请人： Won Mok Kim ,  Soon Gwang Kim ,  Byung Ki Cheong ,  Moon Kyo Chung ,  Taek Sung Lee

发明人： Won Mok Kim ,  Soon Gwang Kim ,  Byung Ki Cheong ,  Moon Kyo Chung ,  Taek Sung Lee

IPC分类号： B32B302

CPC分类号： C04B35/14 ,  C04B35/46 ,  C04B35/581 ,  C04B35/64 ,  C04B2235/40 ,  C04B2235/408 ,  C04B2235/665 ,  C04B2235/80 ,  G11B7/252 ,  G11B7/2534 ,  G11B7/2585 ,  G11B2007/25706 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B2007/25716 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/2982

摘要： The present invention is related to a super-resolution composite material for a high density optical information recording medium which consists of a dielectric medium that is transparent at a laser wavelength in use and has a melting point higher than 800° C., and metal particles that are dispersed in the dielectric medium and have low melting points of 150˜450° C. Super-resolution capability of the material is rendered by metal particles that undergo reversible phase changes between melt and crystalline states, accompanied by changes in optical properties. As the dielectric medium, at least one material is selected for use from the group of SiO2, TiO2, ZrO2, HfO2, Al2O3, ZnO, Y2O3, BeO, MgO, WO3, V2O3, SiN, AlN, ZnS, CdS SiC, MgF, CaF2, NaF, BaF2, PbF2, LiF, LaF3, GaP. As the metal particles with low melting points and high boiling points, at least one material is selected for use from a group of Sn, Pb, Bi, Te, Zn Cd, Se, Tl and Po.

摘要翻译： 本发明涉及一种用于高密度光学信息记录介质的超分辨率复合材料，该复合材料由在使用中激光波长为透明且熔点高于800℃的电介质组成，金属颗粒 分散在介电介质中并具有150〜450℃的低熔点。材料的超分辨能力由在熔融和结晶状态之间经历可逆相变的金属颗粒引起，伴随着光学性质的变化。 作为电介质，选自SiO 2，TiO 2，ZrO 2，HfO 2，Al 2 O 3，ZnO，Y 2 O 3，BeO，MgO，WO 3，V 2 O 3，SiN，AlN，ZnS，CdS SiC，MgF， CaF 2，NaF，BaF 2，PbF 2，LiF，LaF 3，GaP。 作为具有低熔点和高沸点的金属颗粒，选自Sn，Pb，Bi，Te，Zn Cd，Se，Tl和Po中的至少一种材料用于使用。