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    Phase change memory apparatus having an improved cycling endurance and programming method therefor
    3.
    发明授权
    Phase change memory apparatus having an improved cycling endurance and programming method therefor 有权
    具有改进的循环耐久性和编程方法的相变存储装置

    公开(公告)号：US07679954B2

    公开(公告)日：2010-03-16

    申请号：US12318365

    申请日：2008-12-29

    申请人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    发明人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349 ,  G11C2013/0073

    摘要： A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

    摘要翻译： 相变存储装置包括其中布置有多个相变存储器件的相变存储器阵列和向相变存储器提供写入电流脉冲，擦除电流脉冲和反向修复电流脉冲的脉冲发生器 相变存储器阵列中的器件。 反向修复电流脉冲具有与写入电流脉冲和相变存储器件的擦除电流脉冲相反的方向，并且具有使得焦耳热和电迁移移动逆向修复电流脉冲的元件的尺寸。 反向修复电流脉冲具有等于或大于正常写入操作的持续时间和正常擦除操作的持续时间中的较小的一个宽度的宽度。

    Phase change memory apparatus having an improved cycling endurance and programing method therefor
    4.
    发明申请
    Phase change memory apparatus having an improved cycling endurance and programing method therefor 有权
    具有改进的循环耐久性和编程方法的相变存储装置

    公开(公告)号：US20090168504A1

    公开(公告)日：2009-07-02

    申请号：US12318365

    申请日：2008-12-29

    申请人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    发明人： Suyoun Lee ,  Byung-ki Cheong ,  Jeung-hyun Jeong ,  Taek Sung Lee ,  Won Mok Kim

    IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C7/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/0033 ,  G11C16/3431 ,  G11C16/349 ,  G11C2013/0073

    摘要： A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

    摘要翻译： 相变存储装置包括其中布置有多个相变存储器件的相变存储器阵列和向相变存储器提供写入电流脉冲，擦除电流脉冲和反向修复电流脉冲的脉冲发生器 相变存储器阵列中的器件。 反向修复电流脉冲具有与写入电流脉冲和相变存储器件的擦除电流脉冲相反的方向，并且具有使得焦耳热和电迁移移动逆向修复电流脉冲的元件的尺寸。 反向修复电流脉冲具有等于或大于正常写入操作的持续时间和正常擦除操作的持续时间中的较小的一个宽度的宽度。