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    High density optical information recording medium
    1.
    发明授权
    High density optical information recording medium 失效
    高密度光信息记录介质

    公开(公告)号：US06670016B1

    公开(公告)日：2003-12-30

    申请号：US09721890

    申请日：2000-11-24

    申请人： Won Mok Kim ,  Soon Gwang Kim ,  Byung Ki Cheong ,  Moon Kyo Chung ,  Taek Sung Lee

    发明人： Won Mok Kim ,  Soon Gwang Kim ,  Byung Ki Cheong ,  Moon Kyo Chung ,  Taek Sung Lee

    IPC分类号： B32B302

    CPC分类号： C04B35/14 ,  C04B35/46 ,  C04B35/581 ,  C04B35/64 ,  C04B2235/40 ,  C04B2235/408 ,  C04B2235/665 ,  C04B2235/80 ,  G11B7/252 ,  G11B7/2534 ,  G11B7/2585 ,  G11B2007/25706 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B2007/25716 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/2982

    摘要： The present invention is related to a super-resolution composite material for a high density optical information recording medium which consists of a dielectric medium that is transparent at a laser wavelength in use and has a melting point higher than 800° C., and metal particles that are dispersed in the dielectric medium and have low melting points of 150˜450° C. Super-resolution capability of the material is rendered by metal particles that undergo reversible phase changes between melt and crystalline states, accompanied by changes in optical properties. As the dielectric medium, at least one material is selected for use from the group of SiO2, TiO2, ZrO2, HfO2, Al2O3, ZnO, Y2O3, BeO, MgO, WO3, V2O3, SiN, AlN, ZnS, CdS SiC, MgF, CaF2, NaF, BaF2, PbF2, LiF, LaF3, GaP. As the metal particles with low melting points and high boiling points, at least one material is selected for use from a group of Sn, Pb, Bi, Te, Zn Cd, Se, Tl and Po.

    摘要翻译： 本发明涉及一种用于高密度光学信息记录介质的超分辨率复合材料，该复合材料由在使用中激光波长为透明且熔点高于800℃的电介质组成，金属颗粒 分散在介电介质中并具有150〜450℃的低熔点。材料的超分辨能力由在熔融和结晶状态之间经历可逆相变的金属颗粒引起，伴随着光学性质的变化。 作为电介质，选自SiO 2，TiO 2，ZrO 2，HfO 2，Al 2 O 3，ZnO，Y 2 O 3，BeO，MgO，WO 3，V 2 O 3，SiN，AlN，ZnS，CdS SiC，MgF， CaF 2，NaF，BaF 2，PbF 2，LiF，LaF 3，GaP。 作为具有低熔点和高沸点的金属颗粒，选自Sn，Pb，Bi，Te，Zn Cd，Se，Tl和Po中的至少一种材料用于使用。

    High resolution surface plasmon resonance sensor and sensor system thereof
    3.
    发明授权
    High resolution surface plasmon resonance sensor and sensor system thereof 有权
    高分辨率表面等离子体共振传感器及其传感器系统

    公开(公告)号：US08786859B2

    公开(公告)日：2014-07-22

    申请号：US12534497

    申请日：2009-08-03

    申请人： Kyeong Seok Lee ,  Won Mok Kim ,  Taek Sung Lee ,  Byung Ki Cheong

    发明人： Kyeong Seok Lee ,  Won Mok Kim ,  Taek Sung Lee ,  Byung Ki Cheong

    IPC分类号： G01N21/55

    CPC分类号： G01N21/553

    摘要： Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.

    摘要翻译： 提供了一种表面等离子体共振传感器，包括：传递信号光束入射的光的一部分，以产生渐逝场; 以及激发表面等离子体的一部分，用于通过产生的ev逝场激发表面等离子体激元，并引起表面等离子体共振，其中介电波导层插入在激发表面等离子体激元的一部分的金属层之间，并且表面等离子体共振性质被改变 由待分析的对象。