公开(公告)号：US20060108067A1

公开(公告)日：2006-05-25

申请号：US11327930

申请日：2006-01-09

申请人： Subramanyam Iyer ,  Justin Brask ,  Vijayakumar Ramachandrarao

发明人： Subramanyam Iyer ,  Justin Brask ,  Vijayakumar Ramachandrarao

IPC分类号： C23F1/00

CPC分类号： H01L22/26 ,  H01L21/02052 ,  H01L21/306 ,  H01L21/31116 ,  H01L21/31133

摘要： Radiant energy may be applied to a photochemically susceptible etching or conditioning solution to enable precise control of the removal of material or alteration of the top surface of a wafer during the fabrication of semiconductor integrated circuits. A particular condition may be detected during the course of photoactivated generation of free radicals or molecular activation to control the further generation of said species by controlling the radiant energy exposure of a wafer.

摘要翻译： 辐射能量可以应用于光化学敏感的蚀刻或调理溶液，以在半导体集成电路的制造期间精确地控制材料的去除或晶片顶表面的改变。 在光活化产生自由基或分子活化的过程中可以检测到特定的条件，以通过控制晶片的辐射能量暴露来控制所述物质的进一步产生。

公开(公告)号：US20060102204A1

公开(公告)日：2006-05-18

申请号：US10987594

申请日：2004-11-12

申请人： Gunilla Jacobson ,  Bentley Palmer ,  Shan Clark ,  Vijayakumar Ramachandrarao ,  Subramanyam Iyer ,  Robert Turkot

发明人： Gunilla Jacobson ,  Bentley Palmer ,  Shan Clark ,  Vijayakumar Ramachandrarao ,  Subramanyam Iyer ,  Robert Turkot

IPC分类号： C23G1/00 ,  B08B3/00

CPC分类号： B08B7/0021 ,  C23G5/00 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133

摘要： A method for cleaning a substrate containing a micro-feature having a residue thereon. The method includes treating the substrate with a supercritical carbon dioxide cleaning solution containing a peroxide to remove the residue from the micro-feature, where the supercritical carbon dioxide cleaning solution is maintained at a temperature between about 35° C. and about 80° C. According an embodiment of the invention, the supercritical carbon dioxide cleaning solution can further contain ozone. According to another embodiment of the invention, the substrate can be pre-treated with an ozone processing environment.

摘要翻译： 一种清洗含有残留物的微特征的基材的方法。 该方法包括用含有过氧化物的超临界二氧化碳清洗溶液处理底物以从微特征中除去残余物，其中超临界二氧化碳清洗溶液保持在约35℃至约80℃的温度。 根据本发明的一个实施方案，超临界二氧化碳清洗溶液可以进一步含有臭氧。 根据本发明的另一个实施例，可以用臭氧处理环境预处理衬底。

公开(公告)号：US07049053B2

公开(公告)日：2006-05-23

申请号：US10458850

申请日：2003-06-11

申请人： Vijayakumar Ramachandrarao ,  Hyun-Mog Park ,  Subramanyam Iyer ,  Bob Turkot

发明人： Vijayakumar Ramachandrarao ,  Hyun-Mog Park ,  Subramanyam Iyer ,  Bob Turkot

IPC分类号： G03F7/00

CPC分类号： G03F7/168 ,  G03F7/40

摘要： Polymer aggregates in a photoresist layer may be dissolved or reduced in dimension by treatment with supercritical carbon dioxide. The supercritical carbon dioxide may be used before and/or after development of the photoresist. The SCCO2 treatment causes swelling of the photoresist and may allow polymer aggregates in the photoresist to be dissolved. Controlled release of the carbon dioxide de-swells the photoresist, resulting in reduced line edge roughness of openings in the photoresist and reduced resistance of metal lines formed in the openings.

摘要翻译： 光致抗蚀剂层中的聚合物聚集体可以通过用超临界二氧化碳处理而溶解或减小尺寸。 超临界二氧化碳可以在光致抗蚀剂显影之前和/或之后使用。 SCCO 2处理引起光致抗蚀剂的溶胀，并且可以使光致抗蚀剂中的聚合物聚集体溶解。 二氧化碳的控制释放促使光致抗蚀剂膨胀，导致光致抗蚀剂中开口的线边缘粗糙度降低，并减少在开口中形成的金属线的电阻。

公开(公告)号：US20070000519A1

公开(公告)日：2007-01-04

申请号：US11174256

申请日：2005-06-30

申请人： Gunilla Jacobson ,  Subramanyam Iyer

发明人： Gunilla Jacobson ,  Subramanyam Iyer

IPC分类号： B08B3/04

CPC分类号： B08B7/0021 ,  C11D7/08 ,  C11D7/264 ,  C11D7/266 ,  C11D7/267 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426 ,  G03F7/427 ,  H01L21/02101

摘要： A method of removing post-etch residue from a patterned low-k dielectric layer is disclosed. The low-k dielectric layer preferably comprises a porous silicon oxide-based material with the post-etch residue thereon. The post-etch residue is a polymer, a polymer contaminated with an inorganic material, an anti-reflective coating and/or a combination thereof. In accordance with the method of the invention, the post-etch residue is removed from a patterned low-k dielectric layer using a supercritical cleaning solution comprising supercritical carbon dioxide pyridine-hydrogen fluoride adducts, pyridine, hydrogen fluoride and combination thereof

摘要翻译： 公开了从图案化的低k电介质层去除蚀刻后残留物的方法。 低k电介质层优选包括其上具有蚀刻后残留物的多孔氧化硅基材料。 蚀刻后残留物是聚合物，被无机材料污染的聚合物，抗反射涂层和/或其组合。 根据本发明的方法，使用超临界二氧化碳吡啶 - 氟化氢加合物，吡啶，氟化氢及其组合的超临界清洁溶液，从图案化的低k电介质层除去蚀刻后残留物