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公开(公告)号：US20080090498A1
公开(公告)日：2008-04-17
申请号：US11998196
申请日：2007-11-28
申请人： Sudhanshu Misra , Pradip Roy
发明人： Sudhanshu Misra , Pradip Roy
IPC分类号： B24D3/20
CPC分类号： B24B53/017 , B24B37/042 , B24B37/20 , B24B49/02
摘要： A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.
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公开(公告)号：US20050009448A1
公开(公告)日：2005-01-13
申请号：US10810070
申请日：2004-03-25
申请人： Sudhanshu Misra , Pradip Roy
发明人： Sudhanshu Misra , Pradip Roy
CPC分类号： B24B53/017 , B24B37/042 , B24B37/20 , B24B49/02
摘要： A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.
摘要翻译： 通过在衬底上获得结构的一个或多个特性来定制用于衬底上的膜的化学机械平坦化的抛光垫。 例如，当结构是形成在半导体晶片上的芯片时，结构的一个或多个特性可以包括芯片尺寸，图案密度，芯片结构，薄膜材料，薄膜形貌等。 基于结构的一个或多个特性，选择垫的一种或多种化学或物理性质的值。 例如，衬垫的一种或多种化学或物理性质可以包括衬垫材料硬度，厚度，表面开槽，孔径，孔隙率，杨氏模量，可压缩性，粗糙度等。
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3.发明申请Customized polishing pads for CMP and methods of fabrication and use thereof 有权定制的CMP抛光垫及其制造方法和使用方法公开(公告)号：US20060276109A1
公开(公告)日：2006-12-07
申请号：US11251547
申请日：2005-10-14
申请人： Pradip Roy , Manish Deopura , Sudhanshu Misra
发明人： Pradip Roy , Manish Deopura , Sudhanshu Misra
CPC分类号： B24D7/14 , B24B37/042 , B24B37/20 , B24B37/26 , B24B49/02 , B24B53/017 , B33Y10/00
摘要： The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior themo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.
摘要翻译： 本申请涉及用于基板的化学机械平面化（CMP）的抛光垫及其制造和使用方法。 本发明中描述的焊盘定制为抛光规格，其中规格包括（但不限于）被抛光材料，芯片设计和结构，芯片密度和图案密度，设备平台和使用的浆料类型。 这些焊盘可以设计成具有长或短范围顺序的专门的聚合物纳米结构，其允许分子水平调谐实现优异的机械特性。 更具体地，可以设计和制造焊盘，使得焊盘内的化学和物理性质均匀和不均匀的空间分布。 此外，这些垫可以被设计成通过表面工程，通过添加固体润滑剂来调节摩擦系数，并且产生具有形成与抛光表面平行的界面的多层聚合材料的低剪切整体垫。 焊盘还可以具有受控的孔隙率，嵌入式研磨剂，抛光表面上的新型凹槽，用于原位生产的浆料输送，以及用于端点检测的透明区域。
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4.发明申请Customized polishing pads for CMP and methods of fabrication and use thereof 审中-公开定制的CMP抛光垫及其制造方法和使用方法公开(公告)号：US20060189269A1
公开(公告)日：2006-08-24
申请号：US11060898
申请日：2005-02-18
申请人： Pradip Roy , Manish Deopura , Sudhanshu Misra
发明人： Pradip Roy , Manish Deopura , Sudhanshu Misra
IPC分类号： B24D11/00
摘要： Various examples of customized polishing pads are given, along with methods of making and using such customized polishing pads. The subject customized pads are designed and fabricated so that there is spatial distribution of chemical and physical properties of the pads that are customized for performance suited to a specific type of substrate, as well as fabrication control in implementing such customized design. Such customized design and fabrication control produce a monolithic pad thereby specifically suited to provide uniform performance of CMP of the targeted substrate.
摘要翻译： 给出了定制抛光垫的各种示例，以及制造和使用这种定制的抛光垫的方法。 主题定制垫被设计和制造，使得针对特定类型的衬底的性能而定制的衬垫的化学和物理性质的空间分布以及实现这种定制设计的制造控制。 这种定制的设计和制造控制产生单块焊盘，从而特别适合于提供目标衬底的CMP的均匀性能。
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5.发明授权Customized polishing pads for CMP and methods of fabrication and use thereof 有权定制的CMP抛光垫及其制造方法和使用方法公开(公告)号：US08864859B2
公开(公告)日：2014-10-21
申请号：US11998319
申请日：2007-11-28
申请人： Pradip K. Roy , Manish Deopura , Sudhanshu Misra
发明人： Pradip K. Roy , Manish Deopura , Sudhanshu Misra
摘要： The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.
摘要翻译： 本申请涉及用于基板的化学机械平面化（CMP）的抛光垫及其制造和使用方法。 本发明中描述的焊盘定制为抛光规格，其中规格包括（但不限于）被抛光材料，芯片设计和结构，芯片密度和图案密度，设备平台和使用的浆料类型。 这些垫可以设计成具有长或短范围顺序的专门的聚合物纳米结构，其允许分子水平调节实现优异的热机械特性。 更具体地，可以设计和制造焊盘，使得焊盘内的化学和物理性质均匀和不均匀的空间分布。 此外，这些垫可以被设计成通过表面工程，通过添加固体润滑剂来调节摩擦系数，并且产生具有形成与抛光表面平行的界面的多层聚合材料的低剪切整体垫。 焊盘还可以具有受控的孔隙率，嵌入式研磨剂，抛光表面上的新型凹槽，用于原位生产的浆料输送，以及用于端点检测的透明区域。
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公开(公告)号：US06458289B1
公开(公告)日：2002-10-01
申请号：US09413742
申请日：1999-10-06
IPC分类号： C09K1300
CPC分类号： H01L21/3212
摘要： A CMP slurry includes a first emulsion having a continuous aqueous phase and a second emulsion. The first emulsion includes abrasive particles, and the second emulsion captures metal particles polished from the semiconductor wafer. Thus, metal particles can be removed from the slurry during CMP to avoid damaging and/or contaminating the semiconductor wafer.
摘要翻译： CMP浆料包括具有连续水相和第二乳液的第一乳液。 第一乳液包括研磨颗粒，第二乳液捕获从半导体晶片抛光的金属颗粒。 因此，在CMP期间可以从浆料中除去金属颗粒，以避免损坏和/或污染半导体晶片。
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7.发明授权Polishing fluid polishing method semiconductor device and semiconductor device fabrication method 有权抛光液抛光法半导体器件及半导体器件制造方法公开(公告)号：US06375541B1
公开(公告)日：2002-04-23
申请号：US09483576
申请日：2000-01-14
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译： 包括分布有机相和连续水相的抛光液。 分布相具有至少一种络合剂，水相中分散有磨料颗粒。 在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。 进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。
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公开(公告)号：US06312565B1
公开(公告)日：2001-11-06
申请号：US09533428
申请日：2000-03-23
申请人： Sudhanshu Misra , Pradip Kumar Roy
发明人： Sudhanshu Misra , Pradip Kumar Roy
IPC分类号： C01D100
CPC分类号： C01G33/00 , C01G35/00 , C01P2004/82
摘要： Tantalum and niobium aluminate mixed metal oxides may be made by a process comprising mixing a first metal compound selected from the group consisting of aluminum alkoxide, aluminum beta-diketonate, aluminum alkoxide beta-diketonate, and mixtures thereof with a second metal compound selected from the group consisting of niobium alkoxide, niobium beta-diketonate, niobium alkoxide beta-diketonate, tantalum alkoxide, tantalum beta-diketonate, tantalum alkoxide beta-diketonate, and mixtures thereof to provide a precursor and then hydrolyzing the mixture. The resulting mixed metal oxide may be used in a variety of components of integrated circuits.
摘要翻译： 钽和铌酸铝混合金属氧化物可以通过以下方法制备，该方法包括将选自烷氧基铝，β-二酮酸铝，烷氧基铝 - 二酮酮及其混合物的第一金属化合物与选自 由铌醇盐，β-二酮铌，铌醇盐β-二酮酸盐，钽醇盐，钽β-二酮酸盐，钽醇铝β-二酮酸盐及其混合物组成的组，以提供前体，然后水解该混合物。 所得到的混合金属氧化物可用于集成电路的各种组件。
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公开(公告)号：US6100587A
公开(公告)日：2000-08-08
申请号：US383753
申请日：1999-08-26
IPC分类号： H01L21/768 , H07L23/485 , H01L21/4763
CPC分类号： H01L21/76831
摘要： Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.
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公开(公告)号：US08383003B2
公开(公告)日：2013-02-26
申请号：US12456546
申请日：2009-06-18
申请人： Sudhanshu Misra
发明人： Sudhanshu Misra
IPC分类号： C23F1/00
CPC分类号： B24B39/00 , B24B37/042 , B24B37/14 , B24B37/26 , B24B57/00 , Y10T428/249953
摘要： Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.
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