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    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    显示装置及其制造方法

    公开(公告)号：US20130056732A1

    公开(公告)日：2013-03-07

    申请号：US13366683

    申请日：2012-02-06

    申请人： Suk Won JUNG ,  Sung Hoon YANG ,  Sang-Youn HAN ,  Seung Mi SEO ,  Mi-Seon SEO

    发明人： Suk Won JUNG ,  Sung Hoon YANG ,  Sang-Youn HAN ,  Seung Mi SEO ,  Mi-Seon SEO

    IPC分类号： H01L31/0376

    CPC分类号： G06F3/042 ,  G02F1/13338 ,  G06F3/0412

    摘要： A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

    摘要翻译： 显示装置包括：基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件，其中所述红外感测晶体管在所述基板上包括遮光膜，与所述遮光膜接触并重叠并连接到电源线的第一栅电极， 与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极，其中所述读出晶体管在所述衬底上包括第二栅电极，所述第二栅电极上的第二半导体层与所述第二栅电极重叠， 以及第二源极和漏极，第二半导体层，以及其中电源线和第一栅电极处于同一层。

    TOUCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    TOUCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    触控基板及其制造方法

    公开(公告)号：US20130048989A1

    公开(公告)日：2013-02-28

    申请号：US13416514

    申请日：2012-03-09

    申请人： Sang-Youn HAN ,  Mi-Seon SEO ,  Sung-Hoon YANG

    发明人： Sang-Youn HAN ,  Mi-Seon SEO ,  Sung-Hoon YANG

    IPC分类号： H01L31/0376 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L31/1136 ,  H01L27/14649 ,  H01L27/14692

    摘要： A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a material of the sensing semiconductor pattern, and includes a switching semiconductor pattern having a thickness different from a thickness of the sensing semiconductor pattern.

    摘要翻译： 触摸基板包括基底基板，感测元件和开关元件。 感测元件设置在基底基板上，感测红外光，并且包括感测半导体图案。 开关元件电连接到感测元件，包括与感测半导体图案的材料基本相同的材料，并且包括具有不同于感测半导体图案的厚度的厚度的开关半导体图案。

    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    传感器阵列基板及其制造方法

    公开(公告)号：US20120025189A1

    公开(公告)日：2012-02-02

    申请号：US13102824

    申请日：2011-05-06

    申请人： Kyung-Sook JEON ,  Jun-Ho SONG ,  Sang-Youn HAN ,  Sung-Hoon YANG ,  Dae-Cheol KIM ,  Ki-Hun JEONG ,  Mi-Seon SEO

    发明人： Kyung-Sook JEON ,  Jun-Ho SONG ,  Sang-Youn HAN ,  Sung-Hoon YANG ,  Dae-Cheol KIM ,  Ki-Hun JEONG ,  Mi-Seon SEO

    IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0216

    CPC分类号： H01L27/1446 ,  H01L27/14683

    摘要： Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

    摘要翻译： 提供传感器阵列基板及其制造方法。 传感器阵列基板包括：限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极，其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层，其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案，其中所述第一半导体层和所述第二半导体层设置在不同的层上，并且所述第二栅电极和所述遮光图案是电 相互连接。

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US20090309101A1

    公开(公告)日：2009-12-17

    申请号：US12435773

    申请日：2009-05-05

    申请人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN ,  In-Woo KIM ,  Ho-Jun LEE ,  Byeong-Jae AHN

    发明人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN ,  In-Woo KIM ,  Ho-Jun LEE ,  Byeong-Jae AHN

    IPC分类号： H01L33/00 ,  H01L21/336

    CPC分类号： G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

    摘要： A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.

    摘要翻译： 公开了薄膜晶体管阵列基板及其制造方法。 薄膜晶体管（TFT）包括形成在基板上的栅极电极和形成在栅电极上并彼此分离的源极和漏极。 在基板上形成由与栅电极相同的材料构成的公共线。 存储电容器包括与存储电极线连接的存储电极和形成在存储电极上的像素电极。 存储电极和像素电极通过图案化透明导电膜而形成，因此可以通过形成存储电容器的区域透射光，从而增加开口率。

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20110095300A1

    公开(公告)日：2011-04-28

    申请号：US12904281

    申请日：2010-10-14

    申请人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN

    发明人： Dae-Cheol KIM ,  Woong-Kwon KIM ,  Sang-Youn HAN

    IPC分类号： H01L25/075 ,  H01L21/336

    CPC分类号： H01L27/1288 ,  H01L27/124

    摘要： A manufacturing method of a thin film transistor array panel includes forming a gate line on a substrate and a gate insulating layer on the gate line, forming a semiconductor on the gate insulating layer, forming a first data line and a first drain electrode on the semiconductor, forming a lower passivation layer on the first data line and the first drain electrode, forming an upper passivation layer on the lower passivation layer and a metal layer on the upper passivation layer, etching the metal layer by using a photosensitive film as a mask to form a reflecting electrode and to expose the lower passivation layer, etching the exposed lower passivation layer to form a first contact hole exposing the first drain electrode, and forming a connection assistance member connecting the first drain electrode and the reflecting electrode through the first contact hole after removing the photosensitive film.

    摘要翻译： 一种薄膜晶体管阵列面板的制造方法，包括在栅极线上形成栅极线和栅极绝缘层，在栅极绝缘层上形成半导体，在半导体上形成第一数据线和第一漏极 在所述第一数据线和所述第一漏电极上形成下钝化层，在所述下钝化层上形成上钝化层，在所述上钝化层上形成金属层，通过使用感光膜作为掩模蚀刻所述金属层 形成反射电极并暴露下钝化层，蚀刻暴露的下钝化层以形成暴露第一漏极的第一接触孔，以及形成通过第一接触孔连接第一漏电极和反射电极的连接辅助构件 去除感光膜后。