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    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
    1.
    发明申请
    SENSOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
    传感器阵列基板及其制造方法

    公开(公告)号：US20120025189A1

    公开(公告)日：2012-02-02

    申请号：US13102824

    申请日：2011-05-06

    申请人： Kyung-Sook JEON ,  Jun-Ho SONG ,  Sang-Youn HAN ,  Sung-Hoon YANG ,  Dae-Cheol KIM ,  Ki-Hun JEONG ,  Mi-Seon SEO

    发明人： Kyung-Sook JEON ,  Jun-Ho SONG ,  Sang-Youn HAN ,  Sung-Hoon YANG ,  Dae-Cheol KIM ,  Ki-Hun JEONG ,  Mi-Seon SEO

    IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/0216

    CPC分类号： H01L27/1446 ,  H01L27/14683

    摘要： Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

    摘要翻译： 提供传感器阵列基板及其制造方法。 传感器阵列基板包括：限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极，其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层，其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案，其中所述第一半导体层和所述第二半导体层设置在不同的层上，并且所述第二栅电极和所述遮光图案是电 相互连接。

    TOUCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    TOUCH SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    触控基板及其制造方法

    公开(公告)号：US20130048989A1

    公开(公告)日：2013-02-28

    申请号：US13416514

    申请日：2012-03-09

    申请人： Sang-Youn HAN ,  Mi-Seon SEO ,  Sung-Hoon YANG

    发明人： Sang-Youn HAN ,  Mi-Seon SEO ,  Sung-Hoon YANG

    IPC分类号： H01L31/0376 ,  H01L31/18 ,  H01L31/20

    CPC分类号： H01L31/1136 ,  H01L27/14649 ,  H01L27/14692

    摘要： A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a material of the sensing semiconductor pattern, and includes a switching semiconductor pattern having a thickness different from a thickness of the sensing semiconductor pattern.

    摘要翻译： 触摸基板包括基底基板，感测元件和开关元件。 感测元件设置在基底基板上，感测红外光，并且包括感测半导体图案。 开关元件电连接到感测元件，包括与感测半导体图案的材料基本相同的材料，并且包括具有不同于感测半导体图案的厚度的厚度的开关半导体图案。

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    显示装置及其制造方法

    公开(公告)号：US20130056732A1

    公开(公告)日：2013-03-07

    申请号：US13366683

    申请日：2012-02-06

    申请人： Suk Won JUNG ,  Sung Hoon YANG ,  Sang-Youn HAN ,  Seung Mi SEO ,  Mi-Seon SEO

    发明人： Suk Won JUNG ,  Sung Hoon YANG ,  Sang-Youn HAN ,  Seung Mi SEO ,  Mi-Seon SEO

    IPC分类号： H01L31/0376

    CPC分类号： G06F3/042 ,  G02F1/13338 ,  G06F3/0412

    摘要： A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

    摘要翻译： 显示装置包括：基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件，其中所述红外感测晶体管在所述基板上包括遮光膜，与所述遮光膜接触并重叠并连接到电源线的第一栅电极， 与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极，其中所述读出晶体管在所述衬底上包括第二栅电极，所述第二栅电极上的第二半导体层与所述第二栅电极重叠， 以及第二源极和漏极，第二半导体层，以及其中电源线和第一栅电极处于同一层。

    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号：US20130168683A1

    公开(公告)日：2013-07-04

    申请号：US13480233

    申请日：2012-05-24

    申请人： Mi-Seon SEO ,  Cheol Kyu KIM ,  Sung Hoon YANG ,  Hee Young LEE ,  Sang Hyun JEON

    发明人： Mi-Seon SEO ,  Cheol Kyu KIM ,  Sung Hoon YANG ,  Hee Young LEE ,  Sang Hyun JEON

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/66765 ,  H01L29/78621 ,  H01L29/78678

    摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; and a source electrode and a drain electrode disposed on a portion of the semiconductor layer, wherein the semiconductor layer includes an ohmic contact layer, a channel layer, and a buffer layer, the buffer layer disposed between the channel layer and the ohmic contact layer, and the source electrode and the drain electrode contact a surface of the ohmic contact layer.

    摘要翻译： 提供薄膜晶体管。 根据本发明的示例性实施例的薄膜晶体管包括：基板; 设置在所述基板上的栅电极; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体层; 以及设置在所述半导体层的一部分上的源电极和漏电极，其中所述半导体层包括欧姆接触层，沟道层和缓冲层，所述缓冲层设置在所述沟道层和所述欧姆接触层之间， 并且源电极和漏电极接触欧姆接触层的表面。