公开(公告)号：US07602171B2

公开(公告)日：2009-10-13

申请号：US11518981

申请日：2006-09-12

申请人： Sun Choi ,  Dong-soo Lee ,  Yong-kyun Sun ,  Hyun-ho Kim

发明人： Sun Choi ,  Dong-soo Lee ,  Yong-kyun Sun ,  Hyun-ho Kim

IPC分类号： G01R31/28 ,  G11C29/00

CPC分类号： G11C29/56 ,  G01R31/2808 ,  G11C5/04 ,  G11C29/56016

摘要： A system for testing memory modules having a rotating-type board mounting portion with a plurality of mounting surfaces positioned at different planes and connected around an axis to form a rotatable structure, at least one circuit board mounted on each mounting surface, an input/output portion, a rotational motor coupled to a rotational shaft for rotating the rotatable structure, and a central controller electrically connected to the circuit boards.

摘要翻译： 一种用于测试具有旋转型板安装部分的存储器模块的系统，其具有位于不同平面上的多个安装表面并且围绕轴线连接以形成可旋转结构，安装在每个安装表面上的至少一个电路板，输入/输出 耦合到用于旋转可旋转结构的旋转轴的旋转电机，以及电连接到电路板的中央控制器。

公开(公告)号：US20070079187A1

公开(公告)日：2007-04-05

申请号：US11518981

申请日：2006-09-12

申请人： Sun Choi ,  Dong-soo Lee ,  Yong-kyun Sun ,  Hyun-ho Kim

发明人： Sun Choi ,  Dong-soo Lee ,  Yong-kyun Sun ,  Hyun-ho Kim

IPC分类号： G11C29/00

CPC分类号： G11C29/56 ,  G01R31/2808 ,  G11C5/04 ,  G11C29/56016

摘要： A system for testing memory modules having a rotating-type board mounting portion with a plurality of mounting surfaces positioned at different planes and connected around an axis to form a rotatable structure, at least one circuit board mounted on each mounting surface, an input/output portion, a rotational motor coupled to a rotational shaft for rotating the rotatable structure, and a central controller electrically connected to the circuit boards.

摘要翻译： 一种用于测试具有旋转型板安装部分的存储器模块的系统，其具有位于不同平面上的多个安装表面并且围绕轴线连接以形成可旋转结构，安装在每个安装表面上的至少一个电路板，输入/输出 耦合到用于旋转可旋转结构的旋转轴的旋转电机，以及电连接到电路板的中央控制器。

公开(公告)号：US08861253B2

公开(公告)日：2014-10-14

申请号：US13313720

申请日：2011-12-07

申请人： Man Chang ,  Young-bae Kim ,  Chang-jung Kim ,  Myoung-jae Lee ,  Ji-hyun Hur ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee

发明人： Man Chang ,  Young-bae Kim ,  Chang-jung Kim ,  Myoung-jae Lee ,  Ji-hyun Hur ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee

IPC分类号： G11C11/00 ,  G11C11/56 ,  G11C13/00

CPC分类号： G11C13/0069 ,  G11C11/5685 ,  G11C13/0064 ,  G11C2013/0073

摘要： A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.

摘要翻译： 一种操作包括可变电阻器件的半导体器件的方法，所述方法包括向可变电阻器件施加第一电压以便将可变电阻器件的电阻值从第一电阻值改变为第二电阻值，该第二电阻值是 不同于第一个电阻值; 感测流过施加有第一电压的可变电阻装置的第一电流; 确定第一电流是否落在预定的电流范围内; 并且如果所述第一电流不在所述第一电流范围内，则向所述可变电阻装置施加等于所述第一电压的附加第一电压。

公开(公告)号：US08611131B2

公开(公告)日：2013-12-17

申请号：US13307672

申请日：2011-11-30

申请人： Man Chang ,  Young-bae Kim ,  Chang-jung Kim ,  Myoung-jae Lee ,  Seong-jun Park ,  Ji-hyun Hur ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee

发明人： Man Chang ,  Young-bae Kim ,  Chang-jung Kim ,  Myoung-jae Lee ,  Seong-jun Park ,  Ji-hyun Hur ,  Dong-soo Lee ,  Chang-bum Lee ,  Seung-ryul Lee

IPC分类号： G11C11/00 ,  G11C11/36

CPC分类号： G11C13/0007 ,  G11C11/5685 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/0076

摘要： According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device.

摘要翻译： 根据示例性实施例，一种操作半导体器件的方法包括：向可变电阻器件施加第一电压，以便将可变电阻器件的电阻值从第一电阻值改变为不同于第一电阻值的第二电阻值 第一电阻值，感测流过施加有第一电压的可变电阻装置的第一电流，基于分布确定用于将可变电阻装置的电阻值从第二电阻值改变为第一电阻值的第二电压 并且将确定的第二电压施加到可变电阻装置。

公开(公告)号：US08537591B2

公开(公告)日：2013-09-17

申请号：US12926404

申请日：2010-11-16

申请人： Young-bae Kim ,  Chang-bum Lee ,  Dong-soo Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Man Chang ,  Seung-ryul Lee

发明人： Young-bae Kim ,  Chang-bum Lee ,  Dong-soo Lee ,  Chang-jung Kim ,  Myoung-jae Lee ,  Man Chang ,  Seung-ryul Lee

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32

摘要： Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state.

摘要翻译： 操作包括可变电阻器件的半导体器件的方法，所述方法包括通过向可变电阻器件施加复位脉冲电压将第一数据写入半导体器件，使得可变电阻器件从第一电阻状态切换到第二电阻状态 并且通过向可变电阻器件施加设置的脉冲电压将第二数据写入半导体器件，使得可变电阻器件从第二电阻状态切换到第一电阻状态到第二电阻状态。 复位脉冲电压高于设定脉冲电压，第二电阻状态下的电阻大于第一电阻状态。

公开(公告)号：US08492741B2

公开(公告)日：2013-07-23

申请号：US12805430

申请日：2010-07-30

申请人： Chang-bum Lee ,  Dong-soo Lee ,  Chang-jung Kim

发明人： Chang-bum Lee ,  Dong-soo Lee ,  Chang-jung Kim

IPC分类号： H01L29/02

CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/146

摘要： A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory layer including a Ni oxide layer doped with at least one element selected from a group consisting of Fe, Co, and Sn, and at least one second electrode on the resistive memory layer. The RRAM device may include a plurality of first electrodes and a plurality of second electrodes, and the resistive memory layer may be between the plurality of first electrodes and the plurality of second electrodes.

摘要翻译： 电阻随机存取存储器（RRAM）包括诸如Ni氧化物的过渡金属氧化物的电阻性存储层，并且掺杂有金属材料。 RRAM可以包括至少一个第一电极，至少一个第一电极上的电阻性存储器层，电阻性存储层包括掺杂有选自Fe，Co和Sn中的至少一种元素的Ni氧化物层， 以及电阻存储器层上的至少一个第二电极。 RRAM器件可以包括多个第一电极和多个第二电极，并且电阻性存储器层可以在多个第一电极和多个第二电极之间。

公开(公告)号：US20110147696A1

公开(公告)日：2011-06-23

申请号：US12805783

申请日：2010-08-19

申请人： Dong-soo Lee ,  Chang-bum Lee ,  Chang-jung Kim

发明人： Dong-soo Lee ,  Chang-bum Lee ,  Chang-jung Kim

IPC分类号： H01L45/00

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/71 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

摘要： A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable resistance material layer and formed of a conductive material having a lower reactivity with oxygen than the metallic material, and a second electrode layer on the intermediate electrode layer. The RRAM arrays include at least one of the aforementioned RRAM devices.

摘要翻译： 提供了电阻随机存取存储器（RRAM）器件和电阻随机存取存储器（RRAM）阵列，RRAM器件包括第一电极层，由具有多个氧化态的金属材料的氧化物形成的可变电阻材料层， 所述可变电阻材料层上的中间电极层由与所述金属材料相比氧的反应性低的导电材料和所述中间电极层上的第二电极层形成。 RRAM阵列包括至少一个上述RRAM设备。

公开(公告)号：US20100135660A1

公开(公告)日：2010-06-03

申请号：US12606078

申请日：2009-10-26

申请人： Kyeong-hwan Doo ,  Bin-yeong Yoon ,  Dong-soo Lee

发明人： Kyeong-hwan Doo ,  Bin-yeong Yoon ,  Dong-soo Lee

IPC分类号： H04B10/20 ,  H04B10/00

CPC分类号： H04Q11/0067 ,  H04J3/1694 ,  H04J14/0282 ,  H04J2203/0058 ,  H04Q11/0071 ,  H04Q2011/0073

摘要： Disclosed are an optical line terminal in a gigabit passive optical network and a method for transmitting a broadcast frame using the same. The optical line terminal allocates second port identifiers to optical network units such that a broadcast frame is prevented from being retransmitted to an optical network unit which has transmitted the broadcast frame to the optical line terminal.

摘要翻译： 公开了一种千兆无源光网络中的光线路终端以及使用其的广播帧的发送方法。 光线路终端将第二端口标识符分配给光网络单元，使得广播帧被阻止被重发到已经向广播帧发送到光线路终端的光网络单元。

公开(公告)号：US20100133496A1

公开(公告)日：2010-06-03

申请号：US12588274

申请日：2009-10-09

申请人： Chang-bum Lee ,  Chang-jung Kim ,  Dong-soo Lee

发明人： Chang-bum Lee ,  Chang-jung Kim ,  Dong-soo Lee

IPC分类号： H01L47/00

CPC分类号： H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233

摘要： A RRAM may include a first electrode, a second electrode, and a memory resistant layer between the first and second electrodes, wherein the memory resistant layer may include a transition metal oxide doped with a metal having a high oxygen affinity. Because a RRAM includes a memory resistant layer doped with a material having a high oxygen affinity, the RRAM may be stably driven at higher temperatures.

摘要翻译： RRAM可以包括在第一和第二电极之间的第一电极，第二电极和存储器电阻层，其中耐记忆层可以包括掺杂有高氧亲和力的金属的过渡金属氧化物。 因为RRAM包括掺有具有高氧亲和性的材料的记忆阻抗层，所以可以在更高的温度下稳定地驱动RRAM。

公开(公告)号：US6146898A

公开(公告)日：2000-11-14

申请号：US157945

申请日：1998-09-22

申请人： Sung-chul Kang ,  Dong-soo Lee

发明人： Sung-chul Kang ,  Dong-soo Lee

IPC分类号： B01D63/06 ,  B01D71/26 ,  B01D71/32 ,  B01J7/00 ,  B01J8/00 ,  B01J8/06 ,  B01J23/42 ,  C01B13/02 ,  C02F1/58 ,  G01N5/00 ,  G01N33/00 ,  G01N33/18 ,  H01L21/66 ,  G01N33/20

CPC分类号： G01N5/00 ,  B01J7/00 ,  B01J8/009 ,  B01J8/06 ,  C01B13/0214 ,  G01N33/18 ,  G01N2033/0095 ,  Y10T436/206664 ,  Y10T436/25125 ,  Y10T436/25875

摘要： An apparatus and method for on-line decomposition of a hydrogen peroxide solution, for use in fabricating a semiconductor device, includes a membrane tube having a porous plug inserted in each end, with the porous plugs defining a space where a platinum catalyst is disposed. A first coupling tube is inserted into one end of the membrane tube to supply a hydrogen peroxide sample to the membrane tube. The hydrogen peroxide contained in hydrogen peroxide sample is decomposed into water and oxygen gas according to an action of the platinum catalyst. A second coupling tube is inserted into a second end of the membrane tube to discharge a diluted hydrogen peroxide solution to an analytical instrument, where the decomposed hydrogen peroxide solution is analyzed on-line.

摘要翻译： 用于制造半导体器件的过氧化氢溶液的在线分解的装置和方法包括：在每个端部插入有多孔插塞的膜管，多孔插塞限定设置铂催化剂的空间。 将第一联接管插入膜管的一端以将过氧化氢样品供应到膜管。 根据铂催化剂的作用，过氧化氢样品中所含的过氧化氢分解成水和氧气。 将第二耦合管插入到膜管的第二端中，以将稀释的过氧化氢溶液排放到分析仪器上，其中在线分析分解的过氧化氢溶液。