公开(公告)号：US07829882B2

公开(公告)日：2010-11-09

申请号：US11581335

申请日：2006-10-17

申请人： Sun Woon Kim ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

发明人： Sun Woon Kim ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。

公开(公告)号：US07902544B2

公开(公告)日：2011-03-08

申请号：US12787910

申请日：2010-05-26

申请人： Sun Woon Kim ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

发明人： Sun Woon Kim ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。

公开(公告)号：US20100230657A1

公开(公告)日：2010-09-16

申请号：US12787910

申请日：2010-05-26

申请人： Sun Woon KIM ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

发明人： Sun Woon KIM ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。

公开(公告)号：US07705364B2

公开(公告)日：2010-04-27

申请号：US11584504

申请日：2006-10-23

申请人： Dong Yul Lee ,  Sang Won Kang ,  Keun Man Song ,  Je Won Kim ,  Sang Su Hong

发明人： Dong Yul Lee ,  Sang Won Kang ,  Keun Man Song ,  Je Won Kim ,  Sang Su Hong

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.

摘要翻译： 氮化物半导体发光器件具有高的内部量子效率，但是工作电压低。 氮化物半导体发光器件包括氮化物半导体层; 形成在氮化物半导体层上的具有多个量子阱层和多个量子势垒层的多量子阱结构的有源层; 以及形成在有源层上的p型氮化物半导体层。 与氮化物半导体层相邻的量子阱层中的一个具有大于与p氮化物半导体层相邻的另一个量子阱层的能带隙。

公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

申请人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

发明人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

公开(公告)号：US06303404B1

公开(公告)日：2001-10-16

申请号：US09322393

申请日：1999-05-28

申请人： Yong Tae Moon ,  Dong Joon Kim ,  Keun Man Song ,  Seong Ju Park

发明人： Yong Tae Moon ,  Dong Joon Kim ,  Keun Man Song ,  Seong Ju Park

IPC分类号： H01L2100

CPC分类号： H01L33/08 ,  H01L33/0095 ,  H01L33/32

摘要： Disclosed is a method for fabricating a white LED which comprises, as a single active layer, an InGaN thin film which enables emission of white light. The InGaN thin film is constructed by taking advantage of the spinodal decomposition of the ternary compound and rapid thermal annealing. When growing the InGaN thin film on an n-type GaN formed on a sappier substrate under a growth condition, the thin film undergoes spinodal decomposition into two phases which show photoluminescence of a wavelength range from violet to blue and from green to blue, respectively, after which the surface of the thin film is thermally stabilized by rapid thermal annealing and the photoluminescence of the In-deficient phase is improved, so as to give intensive white photoluminescence to the InGaN single active layer. The LED which recruits such a single active InGaN thin film is superb in light emission efficiency and can be fabricated in a significantly reduced process steps.

摘要翻译： 公开了一种制造白光LED的方法，其包括作为单个有源层的能够发射白光的InGaN薄膜。 通过利用三元化合物的旋节分解和快速热退火构成InGaN薄膜。 当在生长条件下在形成在增幅器衬底上的n型GaN上生长InGaN薄膜时，薄膜经历亚稳态分解成两相，分别显示从紫色到蓝色和从绿色到蓝色的波长范围的光致发光， 之后通过快速热退火热稳定薄膜表面，提高了In缺陷相的光致发光，从而为InGaN单一有源层提供强烈的白色光致发光。 招募这种单一活性InGaN薄膜的LED在发光效率方面是极好的，并且可以以显着降低的工艺步骤制造。