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公开(公告)号：US07829882B2
公开(公告)日：2010-11-09
申请号：US11581335
申请日：2006-10-17
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L29/06 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L31/00
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。
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公开(公告)号：US07902544B2
公开(公告)日：2011-03-08
申请号：US12787910
申请日：2010-05-26
申请人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
发明人： Sun Woon Kim , Je Won Kim , Sang Won Kang , Keun Man Song , Bang Won Oh
IPC分类号： H01L33/00
摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.
摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。
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公开(公告)号：US07135716B2
公开(公告)日：2006-11-14
申请号：US10911562
申请日：2004-08-05
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Soo Min Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Soo Min Lee
IPC分类号： H01L29/22
摘要： A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
摘要翻译： 氮化镓系半导体发光元件包括具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。
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4.发明授权Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效由此制造氮化物半导体的制造方法和氮化物半导体结构公开(公告)号：US07018912B2
公开(公告)日：2006-03-28
申请号：US10806432
申请日：2004-03-23
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/00
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。
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5.发明授权公开(公告)号：US08455906B2
公开(公告)日：2013-06-04
申请号：US13286881
申请日：2011-11-01
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L31/0232 , H01L31/0236
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。
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6.发明授权公开(公告)号：US07067401B2
公开(公告)日：2006-06-27
申请号：US11235278
申请日：2005-09-27
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
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7.发明授权公开(公告)号：US07692201B2
公开(公告)日：2010-04-06
申请号：US11098802
申请日：2005-04-05
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。
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公开(公告)号：US08415708B2
公开(公告)日：2013-04-09
申请号：US12911320
申请日：2010-10-25
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/00
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
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公开(公告)号：US20070148923A1
公开(公告)日：2007-06-28
申请号：US11681998
申请日：2007-03-05
申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
发明人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译： 本发明提供一种氮化物半导体器件。 氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。 在n型氮化物半导体层上形成有源层。 在有源层上形成第一p型氮化物半导体层。 在第一p型氮化物半导体层上形成微结构化的电流扩散图案。 电流扩散图案由绝缘材料制成。 在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。
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公开(公告)号：US07187007B2
公开(公告)日：2007-03-06
申请号：US11052103
申请日：2005-02-08
申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
发明人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译： 本发明提供一种氮化物半导体器件。 氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。 在n型氮化物半导体层上形成有源层。 在有源层上形成第一p型氮化物半导体层。 在第一p型氮化物半导体层上形成微结构化的电流扩散图案。 电流扩散图案由绝缘材料制成。 在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。
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