公开(公告)号：US08643800B2

公开(公告)日：2014-02-04

申请号：US13100708

申请日：2011-05-04

申请人： Sun-Woo Kim ,  Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi

发明人： Sun-Woo Kim ,  Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi

IPC分类号： G02F1/136

CPC分类号： G02F1/136277 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288

摘要： A liquid crystal display device includes an array substrate including: gate and data lines crossing each other on a first substrate to define a pixel region; a common line in parallel with the gate line; first and second common line patterns extending from the common line, wherein the data line is between the first and second common line patterns; a thin film transistor connected to the gate and data lines; a pixel electrode connected to the thin film transistor and in the pixel region; and an inorganic black matrix below the gate line, the common line, and the first and second common lines, wherein the inorganic black matrix below the first and second common lines shields the data line; an opposing substrate including a common electrode on a second substrate; and a liquid crystal layer between the array substrate and the opposing substrate.

摘要翻译： 一种液晶显示装置，包括：阵列基板，包括：第一基板上彼此交叉的栅极和数据线，以限定像素区域; 与栅极线并联的公共线; 从所述公共线延伸的第一和第二公共线图案，其中所述数据线在所述第一和第二公共线图案之间; 连接到栅极和数据线的薄膜晶体管; 连接到薄膜晶体管和像素区域中的像素电极; 以及栅极线以下的无机黑色矩阵，公共线以及第一和第二公共线，其中，所述第一和第二公共线下方的无机黑色矩阵屏蔽所述数据线; 在第二基板上包括公共电极的相对基板; 以及阵列基板和相对基板之间的液晶层。

公开(公告)号：US20110273651A1

公开(公告)日：2011-11-10

申请号：US13100708

申请日：2011-05-04

申请人： Sun-Woo Kim ,  Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi

发明人： Sun-Woo Kim ,  Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi

IPC分类号： G02F1/1333 ,  H01J9/00

CPC分类号： G02F1/136277 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288

摘要： A liquid crystal display device includes an array substrate including: gate and data lines crossing each other on a first substrate to define a pixel region; a common line in parallel with the gate line; first and second common line patterns extending from the common line, wherein the data line is between the first and second common line patterns; a thin film transistor connected to the gate and data lines; a pixel electrode connected to the thin film transistor and in the pixel region; and an inorganic black matrix below the gate line, the common line, and the first and second common lines, wherein the inorganic black matrix below the first and second common lines shields the data line; an opposing substrate including a common electrode on a second substrate; and a liquid crystal layer between the array substrate and the opposing substrate.

摘要翻译： 一种液晶显示装置，包括：阵列基板，包括：第一基板上彼此交叉的栅极和数据线，以限定像素区域; 与栅极线并联的公共线; 从所述公共线延伸的第一和第二公共线图案，其中所述数据线在所述第一和第二公共线图案之间; 连接到栅极和数据线的薄膜晶体管; 连接到薄膜晶体管和像素区域中的像素电极; 和栅极线下方的无机黑色矩阵，公共线以及第一和第二公共线，其中第一和第二公共线下方的无机黑色矩阵屏蔽数据线; 在第二基板上包括公共电极的相对基板; 以及阵列基板和相对基板之间的液晶层。

公开(公告)号：US08842108B2

公开(公告)日：2014-09-23

申请号：US13099714

申请日：2011-05-03

申请人： Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi ,  Sun-Woo Kim

发明人： Jae-Kyun Lee ,  Jae-Young Oh ,  Dae-Jung Choi ,  Sun-Woo Kim

IPC分类号： G09G3/36 ,  G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/136209 ,  G02F1/134363 ,  G02F2001/136222

摘要： An array substrate for a liquid crystal display device includes: a substrate; a gate line and a data line on the substrate; a common line parallel to and spaced apart from the gate line; a thin film transistor connected to the gate line and the data line; a plurality of pixel electrodes in the pixel region; a plurality of common electrodes alternating with the plurality of pixel electrodes; at least one outermost common electrode at an edge portion of the pixel region; a black matrix corresponding to the thin film transistor, the gate line and the data line, the black matrix including an inorganic material and having an open portion; and a color filter layer in the open portion.

摘要翻译： 液晶显示装置用阵列基板包括：基板; 基板上的栅极线和数据线; 与栅极线平行并间隔开的公共线; 连接到栅极线和数据线的薄膜晶体管; 像素区域中的多个像素电极; 多个公共电极与所述多个像素电极交替; 在像素区域的边缘部分处的至少一个最外侧公共电极; 对应于薄膜晶体管，栅线和数据线的黑矩阵，黑矩阵包括无机材料并具有开口部分; 和打开部分中​​的滤色器层。

公开(公告)号：US08735187B2

公开(公告)日：2014-05-27

申请号：US13100771

申请日：2011-05-04

申请人： Jae-Kyun Lee ,  Jae-Young Oh

发明人： Jae-Kyun Lee ,  Jae-Young Oh

IPC分类号： H01L21/00

CPC分类号： H01L27/1255 ,  G02F1/133553 ,  G02F1/133555 ,  H01L27/12 ,  H01L27/1248

摘要： An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure.

摘要翻译： 用于液晶显示装置的阵列基板包括基板，栅极线和数据线，并且彼此交叉以形成像素区域，连接到栅极线和数据线的薄膜晶体管，第一钝化层 并且在其顶表面具有第一不均匀结构，在第一钝化层上具有辅助凹凸层，并且在其顶表面具有第一粗糙结构，在辅助凹凸层上具有反射器，反射器具有 由于第一钝化层的第一不均匀结构引起的第二不均匀结构和由于辅助凹凸层的第一粗糙结构引起的第二粗糙结构，所述第二粗糙结构具有比第二凹凸结构更小的图案。

公开(公告)号：US20110272697A1

公开(公告)日：2011-11-10

申请号：US13100771

申请日：2011-05-04

申请人： Jae-Kyun Lee ,  Jae-Young Oh

发明人： Jae-Kyun Lee ,  Jae-Young Oh

IPC分类号： H01L33/62

CPC分类号： H01L27/1255 ,  G02F1/133553 ,  G02F1/133555 ,  H01L27/12 ,  H01L27/1248

摘要： An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure.

摘要翻译： 用于液晶显示装置的阵列基板包括基板，栅极线和数据线，并且彼此交叉以形成像素区域，连接到栅极线和数据线的薄膜晶体管，第一钝化层 并且在其顶表面具有第一不均匀结构，在第一钝化层上具有辅助凹凸层，并且在其顶表面具有第一粗糙结构，在辅助凹凸层上具有反射器，反射器具有 由于第一钝化层的第一不均匀结构引起的第二不均匀结构和由于辅助凹凸层的第一粗糙结构引起的第二粗糙结构，所述第二粗糙结构具有比第二凹凸结构更小的图案。

公开(公告)号：US08345175B2

公开(公告)日：2013-01-01

申请号：US13528466

申请日：2012-06-20

申请人： Jung-Eun Lee ,  Jae-Kyun Lee ,  Moo-Hyoung Song ,  Seung-Chan Choi

发明人： Jung-Eun Lee ,  Jae-Kyun Lee ,  Moo-Hyoung Song ,  Seung-Chan Choi

IPC分类号： G02F1/1343

CPC分类号： H01L33/0041 ,  G02F1/134363 ,  G02F1/136209

摘要： An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line disposed along a first direction on the substrate, a data line disposed along a second direction and crossing the gate line to define a pixel region, a thin film transistor connected to the gate line and the data line, pixel electrodes disposed in the pixel region and connected to the thin film transistor, common electrodes disposed in the pixel region and alternating with the pixel electrodes, a semiconductor layer underlying the data line and including a portion having a width greater than a width of the data line, and a first blocking pattern comprising an opaque material and disposed under the semiconductor layer.

公开(公告)号：US20120270372A1

公开(公告)日：2012-10-25

申请号：US13528466

申请日：2012-06-20

申请人： Jung-Eun Lee ,  Jae-Kyun Lee ,  Moo-Hyoung Song ,  Seung-Chan Choi

发明人： Jung-Eun Lee ,  Jae-Kyun Lee ,  Moo-Hyoung Song ,  Seung-Chan Choi

IPC分类号： H01L21/336

CPC分类号： H01L33/0041 ,  G02F1/134363 ,  G02F1/136209

摘要： An array substrate for an in-plane switching mode liquid crystal display device includes a substrate, a gate line disposed along a first direction on the substrate, a data line disposed along a second direction and crossing the gate line to define a pixel region, a thin film transistor connected to the gate line and the data line, pixel electrodes disposed in the pixel region and connected to the thin film transistor, common electrodes disposed in the pixel region and alternating with the pixel electrodes, a semiconductor layer underlying the data line and including a portion having a width greater than a width of the data line, and a first blocking pattern comprising an opaque material and disposed under the semiconductor layer.

公开(公告)号：US20080166829A1

公开(公告)日：2008-07-10

申请号：US12007212

申请日：2008-01-08

申请人： Goe-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

发明人： Goe-Sung Chae ,  Jae-Kyun Lee ,  Yong-Sup Hwang

IPC分类号： H01L21/70

CPC分类号： G02F1/13458 ,  G02F1/1362 ,  G02F1/136213

摘要： According to an embodiment, a fabrication method includes forming a gate line disposed along a first direction and a common line parallel to the gate line on a substrate, the gate and common lines spaced apart from each other, forming a gate insulating layer on the gate and common lines, forming a semiconductor layer on the gate insulating layer, forming a source electrode and a pixel electrode of transparent conductive material, the pixel electrode including a drain electrode portion, the drain electrode portion overlapping the semiconductor layer, forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively, and forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line.

摘要翻译： 根据实施例，制造方法包括：形成沿着第一方向设置的栅极线和与基板上的栅极线平行的公共线，栅极和公共线彼此间隔开，在栅极上形成栅极绝缘层 和公共线，在栅极绝缘层上形成半导体层，形成透明导电材料的源电极和像素电极，所述像素电极包括漏电极部分，所述漏电极部分与所述半导体层重叠，形成钝化层，所述钝化层包括 第一接触孔和开口部分，所述第一接触孔分别暴露所述源极电极和所述开放部分，暴露所述像素电极，并且形成沿所述钝化层沿着第二方向布置的数据线，所述数据线连接到所述源极 电极通过第一接触孔并与栅极线交叉。

公开(公告)号：US20080160718A1

公开(公告)日：2008-07-03

申请号：US12004240

申请日：2007-12-18

申请人： Hae-Jung Lee ,  Hyun-Sik Park ,  Jae-Kyun Lee

发明人： Hae-Jung Lee ,  Hyun-Sik Park ,  Jae-Kyun Lee

IPC分类号： H01L21/762

CPC分类号： H01L21/76232

摘要： A method for fabricating an isolation layer in a semiconductor device includes providing a substrate, forming a trench over the substrate, forming a liner nitride layer and a liner oxide layer along a surface of the trench, forming an insulation layer having an etch selectivity ratio different from that of the liner oxide layer over the liner oxide layer, forming a spin on dielectric (SOD) oxide layer to fill a portion of the trench over the insulation layer, and forming a high density plasma (HDP) oxide layer for filling the remaining a portion of the trench.

摘要翻译： 在半导体器件中制造隔离层的方法包括：提供衬底，在衬底上形成沟槽，沿着沟槽的表面形成衬里氮化物层和衬垫氧化物层，形成具有不同蚀刻选择比的绝缘层 与衬垫氧化物层上的衬垫氧化物层的衬垫氧化物层的形成自旋在电介质（SOD）氧化物层上形成，以填充绝缘层上的一部分沟槽，并形成高密度等离子体（HDP）氧化物层，用于填充剩余的 一部分沟槽。

公开(公告)号：US6107640A

公开(公告)日：2000-08-22

申请号：US832692

申请日：1997-04-11

申请人： Jae-Yong Park ,  Jae-Kyun Lee ,  Jung-Hoan Kim

发明人： Jae-Yong Park ,  Jae-Kyun Lee ,  Jung-Hoan Kim

IPC分类号： B60R21/00 ,  H01L21/31 ,  H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01

CPC分类号： H01L29/66765 ,  H01L29/78618

摘要： A semiconductor device for a TFT includes a first semiconductor layer to be used as a channel, which is formed on a portion of an insulating layer in correspondence with an underlying gate electrode. The semiconductor device further includes a second semiconductor layer, an ohmic contact layer, and a metal layer formed on the insulating layer and the first semiconductor layer and patterned to expose portions of the insulating layer and the first semiconductor layer. The patterned metal layer forms source and drain electrodes. The semiconductor device also includes a passivation layer, which covers the insulating layer, the first semiconductor layer and the source and drain electrodes, and a pixel electrode, which contacts the drain electrode though a contact hole in the passivation layer.

摘要翻译： 用于TFT的半导体器件包括用作沟道的第一半导体层，其形成在与下面的栅电极对应的绝缘层的一部分上。 半导体器件还包括形成在绝缘层和第一半导体层上的第二半导体层，欧姆接触层和金属层，并被图案化以暴露绝缘层和第一半导体层的部分。 图案化金属层形成源极和漏极。 半导体器件还包括覆盖绝缘层，第一半导体层和源极和漏极的钝化层和通过钝化层中的接触孔接触漏电极的像素电极。