公开(公告)号：US20190131463A1

公开(公告)日：2019-05-02

申请号：US16228165

申请日：2018-12-20

Applicant: SunPower Corporation

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/0745 ,  H01L21/322

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US11251315B2

公开(公告)日：2022-02-15

申请号：US16877255

申请日：2020-05-18

Applicant: SunPower Corporation

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L31/028 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L21/322 ,  H01L31/068 ,  H01L31/0368

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US20210043782A1

公开(公告)日：2021-02-11

申请号：US16877255

申请日：2020-05-18

Applicant: SunPower Corporation

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L21/322 ,  H01L31/068 ,  H01L31/0368

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US10658525B2

公开(公告)日：2020-05-19

申请号：US16228165

申请日：2018-12-20

Applicant: SunPower Corporation

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L21/322 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0368

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US10170642B2

公开(公告)日：2019-01-01

申请号：US15876927

申请日：2018-01-22

Applicant: SUNPOWER CORPORATION

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L27/15 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L21/322 ,  H01L31/0368 ,  H01L31/0747 ,  H01L31/0745 ,  H01L31/0216

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

公开(公告)号：US09899542B2

公开(公告)日：2018-02-20

申请号：US15213273

申请日：2016-07-18

Applicant: SUNPOWER CORPORATION

Inventor： David D. Smith ,  Tim Dennis ,  Russelle De Jesus Tabajonda

IPC: H01L31/18 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/0368

CPC classification number: H01L31/02008 ,  H01L21/3221 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.