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    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    透明非易失性存储器薄膜晶体管及其制造方法

    公开(公告)号：US20120225500A1

    公开(公告)日：2012-09-06

    申请号：US13469558

    申请日：2012-05-11

    申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC分类号： H01L51/40

    CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    Transparent nonvolatile memory thin film transistor and method of manufacturing the same
    3.
    发明授权
    Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
    透明非易失性存储薄膜晶体管及其制造方法

    公开(公告)号：US08198625B2

    公开(公告)日：2012-06-12

    申请号：US12555986

    申请日：2009-09-09

    申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC分类号： H01L35/24

    CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    Transparent nonvolatile memory thin film transistor and method of manufacturing the same
    4.
    发明授权
    Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
    透明非易失性存储器薄膜晶体管及其制造方法

    公开(公告)号：US08476106B2

    公开(公告)日：2013-07-02

    申请号：US13469558

    申请日：2012-05-11

    申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC分类号： H01L51/40

    CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    透明非易失性存储器薄膜晶体管及其制造方法

    公开(公告)号：US20100243994A1

    公开(公告)日：2010-09-30

    申请号：US12555986

    申请日：2009-09-09

    申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

    IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

    CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

    摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

    摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

    MEMORY CELL AND MEMORY DEVICE USING THE SAME
    6.
    发明申请
    MEMORY CELL AND MEMORY DEVICE USING THE SAME 审中-公开
    使用该存储单元的存储单元和存储器件

    公开(公告)号：US20110305062A1

    公开(公告)日：2011-12-15

    申请号：US12887316

    申请日：2010-09-21

    申请人： Chun Won BYUN ,  Byeong Hoon Kim ,  Sung Min Yoon ,  Kyoung Ik Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Min Ki Ryu ,  Shin Hyuk Yang ,  Oh Sang Kwon ,  Eun Suk Park

    发明人： Chun Won BYUN ,  Byeong Hoon Kim ,  Sung Min Yoon ,  Kyoung Ik Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Min Ki Ryu ,  Shin Hyuk Yang ,  Oh Sang Kwon ,  Eun Suk Park

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： Provided are a memory cell and a memory device using the same, particularly, a nonvolatile non-destructive readable random access memory cell including a ferroelectric transistor as a storage unit and a memory device using the same. The memory cell includes a ferroelectric transistor having a drain to which a reference voltage is applied, a first switch configured to allow a source of the ferroelectric transistor to be connected to a first line in response to a scan signal, and a second switch configured to allow a gate of the ferroelectric transistor to be connected to a second line in response to the scan signal. The memory device enables random access and performs non-destructive read-out (NDRO) operations.

    摘要翻译： 提供了一种存储器单元和使用该存储单元的存储器件，特别地，包括作为存储单元的铁电晶体管的非易失性非破坏性可读随机存取存储单元和使用该存储单元的存储器件。 存储单元包括具有施加了参考电压的漏极的铁电晶体管，被配置为允许铁电晶体管的源被响应于扫描信号连接到第一线的第一开关，以及被配置为 允许铁电晶体管的栅极响应于扫描信号连接到第二线。 存储器件允许随机访问并执行非破坏性读出（NDRO）操作。

    NON-VOLATILE MEMORY TRANSISTOR HAVING DOUBLE GATE STRUCTURE
    7.
    发明申请
    NON-VOLATILE MEMORY TRANSISTOR HAVING DOUBLE GATE STRUCTURE 审中-公开
    具有双门结构的非易失性存储器晶体管

    公开(公告)号：US20120007158A1

    公开(公告)日：2012-01-12

    申请号：US13173625

    申请日：2011-06-30

    申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Chun Won Byun ,  Min Ki Ryu ,  Soon Won Jung

    发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Chun Won Byun ,  Min Ki Ryu ,  Soon Won Jung

    IPC分类号： H01L27/088

    CPC分类号： H01L29/78391 ,  H01L29/22 ,  H01L29/40111 ,  H01L29/516

    摘要： Provided is a non-volatile memory transistor having a double gate structure, including a first gate electrode formed on a substrate and to which an operating voltage is applied, a first gate insulating layer formed on the first gate electrode, source and drain electrodes formed on the first gate insulating layer at predetermined intervals, a channel layer formed on the first gate insulating layer between the source and drain electrodes, a second gate insulating layer formed on the channel layer, and a second gate electrode formed on the second gate insulating layer and connected to the first gate electrode such that the operating voltage is applied thereto. Accordingly, a turn-on voltage of the memory transistor can be easily controlled.

    摘要翻译： 本发明提供一种具有双栅极结构的非易失性存储晶体管，包括形成于基板上的第一栅电极，施加工作电压的第一栅极绝缘层，形成在第一栅电极上的源电极和漏电极， 所述第一栅极绝缘层以预定间隔形成，沟道层，形成在所述源极和漏极之间的所述第一栅极绝缘层上，形成在所述沟道层上的第二栅极绝缘层，以及形成在所述第二栅极绝缘层上的第二栅极电极， 连接到第一栅电极，使得施加工作电压。 因此，可以容易地控制存储晶体管的接通电压。

    Composition for oxide semiconductor thin film and field effect transistor using the composition
    10.
    发明授权
    Composition for oxide semiconductor thin film and field effect transistor using the composition 有权
    使用该组合物的氧化物半导体薄膜和场效应晶体管的组成

    公开(公告)号：US08017045B2

    公开(公告)日：2011-09-13

    申请号：US12331688

    申请日：2008-12-10

    申请人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

    发明人： Doo Hee Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho

    IPC分类号： H01B1/02

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.

    摘要翻译： 提供了使用该组合物的氧化物半导体薄膜和场效应晶体管（FET）的组合物。 该组合物包含约50-约99mol％的氧化锌（ZnO）; 约0.5〜49.5摩尔％的氧化锡（SnO x）; 和氧化铝（AlOx）的剩余摩尔百分数。 由该组合物形成的薄膜在400℃以下的温度下保持为非晶相。 FET包括由该组合物形成的有源层并具有改善的电特性。 可以使用低温工艺制造FET，而不需要昂贵的原材料，例如In和Ga。