Bolt support structure
    1.
    发明授权
    Bolt support structure 有权
    螺栓支撑结构

    公开(公告)号:US08926246B2

    公开(公告)日:2015-01-06

    申请号:US13559660

    申请日:2012-07-27

    IPC分类号: F16B39/00

    CPC分类号: B60R16/0238 F16B37/045

    摘要: There is provided a bolt support structure which can absorb displacement of a bus bar and prevent the bus bar from bending during fastening of bolt, having a bolt including a head portion and a shaft portion and a mount portion to which the head portion is mounted movable in an axial direction of the shaft portion. The mount portion includes a bottom and upper plates between which a large-diameter portion of the head portion is positioned. The shaft portion and a small-diameter portion of the head portion are passed through a notch of the upper plate. A gap between the bottom and upper plates is larger than the thickness of the large-diameter portion. After the head portion is mounted to the mount portion, the nut is attached to the shaft portion so that the bus bar and the terminal clamp are sandwiched between the head portion and the nut.

    摘要翻译: 提供了一种螺栓支撑结构,其能够吸收汇流条的位移并防止汇流条在螺栓紧固期间弯曲,具有包括头部和轴部的螺栓以及安装部分,头部可安装在该安装部分上 在轴部的轴向上。 安装部分包括底板和上板,其中头部的大直径部分位于该底板和上板之间。 头部的轴部和小直径部分通过上板的凹口。 底板和上板之间的间隙大于大直径部分的厚度。 在头部安装到安装部分之后,螺母附接到轴部分,使得母线和端子夹被夹在头部和螺母之间。

    BOLT SUPPORT STRUCTURE
    2.
    发明申请
    BOLT SUPPORT STRUCTURE 有权
    螺栓支撑结构

    公开(公告)号:US20130028683A1

    公开(公告)日:2013-01-31

    申请号:US13559660

    申请日:2012-07-27

    IPC分类号: F16B39/22

    CPC分类号: B60R16/0238 F16B37/045

    摘要: There is provided a bolt support structure which can absorb displacement of a bus bar and prevent the bus bar from bending during fastening of bolt, having a bolt including a head portion and a shaft portion and a mount portion to which the head portion is mounted movable in an axial direction of the shaft portion. The mount portion includes a bottom and upper plates between which a large-diameter portion of the head portion is positioned. The shaft portion and a small-diameter portion of the head portion are passed through a notch of the upper plate. A gap between the bottom and upper plates is larger than the thickness of the large-diameter portion. After the head portion is mounted to the mount portion, the nut is attached to the shaft portion so that the bus bar and the terminal clamp are sandwiched between the head portion and the nut.

    摘要翻译: 提供一种螺栓支撑结构,其能够吸收汇流条的位移并防止汇流条在螺栓紧固期间弯曲,具有包括头部和轴部的螺栓以及安装部分,头部可安装在该安装部分上 在轴部的轴向上。 安装部分包括底板和上板,其中头部的大直径部分位于该底板和上板之间。 头部的轴部和小直径部分通过上板的凹口。 底板和上板之间的间隙大于大直径部分的厚度。 在头部安装到安装部分之后,螺母附接到轴部分,使得母线和端子夹具夹在头部和螺母之间。

    Waterproof box
    5.
    发明授权
    Waterproof box 有权
    防水箱

    公开(公告)号:US09114762B2

    公开(公告)日:2015-08-25

    申请号:US13376938

    申请日:2010-06-08

    IPC分类号: B65D53/00 B60R16/023 H02G3/08

    CPC分类号: B60R16/0239 H02G3/088

    摘要: An object of the present invention is to provide a waterproof box capable of improving waterproof performance, and workability and space-saving. The washing water hits the lower face of the first waterproof part in the upper cover, and the upper cover is uplifted, at this time the tapered outer face and the inner face in the first waterproof part and are abutted and engaged to each other, causing the inlet of the small passage to close. Even if water infiltrates, the water infiltrates into the dead end to let the momentum thereof reduce. Further, the water infiltrates into the dead end let the momentum thereof reduce. The water its momentum have been reduced falls. Consequently, it is effective for enhancing waterproof performance to include the dead end.

    摘要翻译: 本发明的目的是提供一种能够提高防水性能,可加工性和节省空间的防水盒。 洗涤水撞击上盖中的第一防水部的下表面,并且上盖被提升,此时第一防水部的锥形外表面和内表面彼此抵接并接合,导致 小通道的入口关闭。 即使水渗透,水会渗入死胡同,使其动量减少。 此外,水渗透到死角,使其动量减少。 水势下降。 因此,提高防水性能以包括死角是有效的。

    Information processing system, control information processing device, and program
    6.
    发明授权
    Information processing system, control information processing device, and program 有权
    信息处理系统,控制信息处理装置和程序

    公开(公告)号:US08633796B2

    公开(公告)日:2014-01-21

    申请号:US12100980

    申请日:2008-04-10

    IPC分类号: G06F3/00 H04B5/00

    摘要: There is provided an information processing system that includes an information processing terminal equipped with an IC chip capable of non-contact communication with a reader/writer, a data provider device that stores a first data record for creating service data, and a control information processing device that creates the service data and transmits the service data to the information processing terminal. The information processing terminal includes a terminal communication portion that acquires the first data record from the data provider device and transmits the first data record to the control information processing device. The control information processing device includes a control communication portion that receives the first data record, a control storage portion that stores a second data record for creating the service data, and a data creation portion that creates the service data based on the first data record and the second data record.

    摘要翻译: 提供了一种信息处理系统,其包括配备有能够与读取器/写入器进行非接触通信的IC芯片的信息处理终端,存储用于创建服务数据的第一数据记录的数据提供器设备和控制信息处理 设备,其创建服务数据并将服务数据发送到信息处理终端。 信息处理终端包括从数据提供者装置获取第一数据记录并将第一数据记录发送到控制信息处理装置的终端通信部分。 所述控制信息处理装置包括接收所述第一数据记录的控制通信部,存储用于创建所述服务数据的第二数据记录的控制存储部,以及基于所述第一数据记录创建所述服务数据的数据生成部,以及 第二个数据记录。

    Process for producing ceramic substrate
    7.
    发明授权
    Process for producing ceramic substrate 有权
    陶瓷基板的制造方法

    公开(公告)号:US08123882B2

    公开(公告)日:2012-02-28

    申请号:US12888450

    申请日:2010-09-23

    IPC分类号: B29C65/00 C03B29/00

    摘要: A shrinkage suppression layer used in the production of a ceramic substrate according to a non-shrinkage process provides favorable removal performance while sufficiently ensuring the restraining performance of the shrinkage suppression layer. Resin beads, which disappear at a temperature lower than the sintering temperature of a low-temperature sintering ceramic material of a base material layer to form open bores in a shrinkage suppression layer, are added to the shrinkage suppression layer and dispersed uniformly at least in a principal surface direction. The shrinkage suppression layer provides sufficient restraining performance to the base material layer in the step of firing, and after the firing, forms open bores, thereby improving the removal performance of the shrinkage suppression layer.

    摘要翻译: 根据非收缩方法用于制造陶瓷基板的收缩抑制层在充分确保收缩抑制层的约束性能的同时提供了良好的去除性能。 在低于烧结温度的基材层的烧结温度下消失的树脂珠在收缩抑制层中加入到收缩抑制层中,并至少均匀地分散在 主表面方向。 收缩抑制层在烧成工序中对基材层提供足够的抑制性能,烧成后形成开口孔,从而提高收缩抑制层的除去性能。

    SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID
    8.
    发明申请
    SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开
    使用泡沫/化学混合清洗液的半导体基板清洗方法

    公开(公告)号:US20110088731A1

    公开(公告)日:2011-04-21

    申请号:US12978933

    申请日:2010-12-27

    IPC分类号: B08B3/00 B08B3/02

    摘要: A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.

    摘要翻译: 已经公开了一种方法,其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者,使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

    INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, INFORMATION PROCESSING PROGRAM AND INFORMATION PROCESSING SYSTEM
    9.
    发明申请
    INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, INFORMATION PROCESSING PROGRAM AND INFORMATION PROCESSING SYSTEM 有权
    信息处理装置,信息处理方法,信息处理程序和信息处理系统

    公开(公告)号:US20100049984A1

    公开(公告)日:2010-02-25

    申请号:US12543084

    申请日:2009-08-18

    IPC分类号: H04L9/32 G06F21/00

    摘要: An information processing apparatus according to the present application includes a first application allowed to access the IC chip, including an IC chip in which predetermined data is recorded, an IC chip reading unit that reads the data recorded in the IC chip, and a signature data generation unit that generates signature data by performing encryption processing on the recorded data read by the IC chip reading unit and a second application not allowed to access the IC chip, including a server access unit that requests acquisition of content from an information providing server by receiving the signature data and the recorded data from the first application and transmitting the signature data and the recorded data to the information providing server that provides predetermined content.

    摘要翻译: 根据本申请的信息处理设备包括允许访问IC芯片的第一应用,包括其中记录有预定数据的IC芯片,读取记录在IC芯片中的数据的IC芯片读取单元和签名数据 生成单元,其通过对由IC芯片读取单元读取的记录数据和不允许访问IC芯片的第二应用进行加密处理来生成签名数据,所述第二应用包括服务器访问单元,其通过接收来请求从信息提供服务器获取内容 签名数据和来自第一应用的记录数据,并将签名数据和记录数据发送到提供预定内容的信息提供服务器。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20090011570A1

    公开(公告)日:2009-01-08

    申请号:US12146143

    申请日:2008-06-25

    IPC分类号: H01L21/76

    CPC分类号: H01L21/764

    摘要: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

    摘要翻译: 一种制造半导体器件的方法包括:去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分,在凹部中形成第一外延半导体层,形成第二外延半导体层 在所述突出部分和所述第一外延半导体层上,用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分,以露出所述第一外延半导体层的一部分,并且蚀刻所述第一外延半导体层 从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。