公开(公告)号：US08593134B2

公开(公告)日：2013-11-26

申请号：US13042833

申请日：2011-03-08

申请人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

发明人： Susumu Haratani ,  Hitoshi Yamaguchi ,  Masahiro Miyazaki ,  Shigeru Shimura

IPC分类号： G01R15/20

CPC分类号： G01R15/205 ,  B82Y25/00 ,  G01R33/093

摘要： A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

摘要翻译： 电流传感器包括各自具有电阻值的第一至第四磁阻元件; 以及向磁阻元件施加补偿磁场的补偿电流线。 桥接电路由磁阻元件形成。 第一和第三磁阻元件的电阻值在一个递减方向上一起变化。 第二和第四磁阻元件的电阻值在另一个增加/减小方向上一起变化。 响应于在第三和第四结之间的电压施加，补偿电流由第一和第二结之间的电位差产生。 补偿电流线包括第一至第四线部分。 每个线部分沿与磁阻元件的延伸方向相同的方向延伸，与相应的磁阻元件重叠。 基于补偿电流检测要检测的电流。

公开(公告)号：US07903453B2

公开(公告)日：2011-03-08

申请号：US11705720

申请日：2007-02-13

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/15

摘要： A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

摘要翻译： 磁存储器不易受到外部磁场的影响，从而影响写入错误和由外部磁场引起的其他不利影响。 在磁存储器中，磁阻元件被布置成与导体线的一部分相邻。 屏蔽结构还被布置成屏蔽磁阻元件抵抗由线路部分以外的因素产生的外部磁场。

公开(公告)号：US20070187786A1

公开(公告)日：2007-08-16

申请号：US11705720

申请日：2007-02-13

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  G11C11/15

摘要： A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

摘要翻译： 磁存储器不易受到外部磁场的影响，从而影响写入错误和由外部磁场引起的其他不利影响。 在磁存储器中，磁阻元件被布置成与导体线的一部分相邻。 屏蔽结构还被布置成屏蔽磁阻元件抵抗由线路部分以外的因素产生的外部磁场。

公开(公告)号：US5627012A

公开(公告)日：1997-05-06

申请号：US598913

申请日：1996-02-09

申请人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

发明人： Junji Tominaga ,  Ryo Inaba ,  Susumu Haratani

IPC分类号： B41M5/26 ,  C23C14/06 ,  G11B7/0045 ,  G11B7/243 ,  G11B7/26 ,  C23C14/34

CPC分类号： C23C14/0623 ,  G11B7/243 ,  G11B7/26 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B7/00454 ,  Y10S430/146

摘要： An optical recording medium is prepared by forming on a substrate a phase change recording layer comprising elements A, B, C and optional D wherein A is silver and/or gold, B is antimony and/or bismuth, C is tellurium and/or selenium, D is indium or a mixture of indium and aluminum and/or phosphorus. Formation of the recording layer is carried out by the step of sputtering an A--C base metal and the step of sputtering a B base metal optionally containing D in this successive order or reverse order; or by the step of sputtering an A--C base metal, the step of sputtering a B base metal, and the step of sputtering a D base metal in this successive order or reverse order. Since the resulting recording layer is already crystallized, the method eliminates a need for extra initialization.

摘要翻译： 通过在基板上形成包含元素A，B，C和任选D的相变记录层来制备光记录介质，其中A是银和/或金，B是锑和/或铋，C是碲和/或硒 ，D是铟或铟和铝和/或磷的混合物。 记录层的形成通过溅射A-C基体金属的步骤和以任选地含有D的B基底金属以相继的顺序或相反的顺序溅射的步骤进行; 或通过溅射A-C基底金属的步骤，溅射B母材的步骤，以及以相继的顺序或相反顺序溅射D母材的步骤。 由于所得记录层已经结晶，所以该方法消除了对额外的初始化的需要。

公开(公告)号：US07405961B2

公开(公告)日：2008-07-29

申请号：US11232976

申请日：2005-09-23

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic storage device includes a magnetoresistive element. A pair of side faces of the magnetoresistive element are at least partially opposed to end faces of a pair of open ends of a magnetic yoke. Moreover, the pair of side faces of the magnetoresistive element and the end faces of the pair of open ends of the magnetic yoke have predetermined angles, respectively. Thus, the magnetic storage device can reduce writing current while the magnetic storage device has a small and simple structure.

摘要翻译： 磁存储装置包括磁阻元件。 磁阻元件的一对侧面至少部分地与磁轭的一对开口端的端面相对。 此外，磁阻元件的一对侧面和磁轭的一对开口端的端面分别具有预定的角度。 因此，磁存储装置可以减小写入电流，同时磁存储装置结构简单而简单。

公开(公告)号：US20070133263A1

公开(公告)日：2007-06-14

申请号：US11418351

申请日：2006-05-04

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory 1 having a wire 5 extended in a direction of arbitrary decision, an electro-resistivity effect element 4 disposed adjacently to the wire 5, and a counter element side yoke 20B disposed adjacently on the side opposite the magneto-resistivity effect element 4 in the wire 5 and having the thickness of the counter element side yoke 20B so set as to be larger than 50 nm and smaller than 150 nm. Owing to conformity with this invention, this magnetic memory is enabled to homogenize the magnetization property during the course of writing operation and perform the writing work with a low electric current.

摘要翻译： 具有沿任意决定方向延伸的线5的磁性存储器1，与导线5相邻配置的电阻效应元件4以及与磁电阻效应元件相反侧相邻配置的相对元件侧磁轭20B 4，并且具有相对元件侧磁轭20B的厚度设定为大于50nm且小于150nm。 由于符合本发明，这种磁存储器能够在写入操作期间使磁化特性均匀化，并以低电流进行写入工作。

公开(公告)号：US20060279980A1

公开(公告)日：2006-12-14

申请号：US10568808

申请日：2004-08-18

申请人： Susumu Haratani ,  Keiji Koga ,  Joichiro Ezaki

发明人： Susumu Haratani ,  Keiji Koga ,  Joichiro Ezaki

IPC分类号： G11C11/00

CPC分类号： H01L27/224 ,  G11C11/16 ,  H01L43/08

摘要： To provide a magnetic memory cell that is capable of efficiently changing the magnetization directions of magneto-sensitive layers. A magnetic memory cell comprises an annular magnetic layer 4a through which extends a write bit line 5a that generates a magnetic field, and a TMR film S20a configured so as to include: a first magneto-sensitive layer 14a, a magnetization direction of which is changed by the magnetic field in the annular magnetic layer 4a; and a magnetoresistive effect revealing body 20a disposed on a surface of the first magneto-sensitive layer 14a so that an electric current flows in a direction perpendicular to a laminating surface of the laminate, and the first magneto-sensitive layer 14a has a thickness thereof set in a range of not less than 0.5 nm to not more than 40 nm.

摘要翻译： 提供能够有效地改变感磁层的磁化方向的磁存储单元。 磁存储单元包括环形磁性层4a，通过该环形磁性层延伸产生磁场的写入位线5a;以及TMR膜S 20a，被配置为包括：第一磁敏层14a，磁化 其方向由环形磁性层4a中的磁场改变; 以及设置在第一感应层14a的表面上的电磁效应显示体20a，使得电流在垂直于层叠体的层叠表面的方向上流动，并且第一磁敏层14具有 其厚度设定在不小于0.5nm至不大于40nm的范围内。

公开(公告)号：US20060067008A1

公开(公告)日：2006-03-30

申请号：US11233140

申请日：2005-09-23

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/16

摘要： A magnetic storage device includes a magnetic yoke. A maximum thickness of each open end of the magnetic yoke in a diameter direction of the magnetic yoke is set to be larger than a maximum thickness of a second magnetic layer of a magnetoresistive element in the diameter direction of the magnetic yoke, thereby materializing the shape of the magnetic yoke. Moreover, a magnetic field generated from the magnetic yoke can be increased by optimization of the shape of the magnetic yoke, thereby reducing writing current.

摘要翻译： 磁存储装置包括磁轭。 磁轭在磁轭的直径方向上的每个开口端的最大厚度被设定为大于磁轭的直径方向上的磁阻元件的第二磁性层的最大厚度，从而实现形状 的磁轭。 此外，通过优化磁轭的形状，可以提高从磁轭产生的磁场，从而减小写入电流。

公开(公告)号：US20060067007A1

公开(公告)日：2006-03-30

申请号：US11232976

申请日：2005-09-23

申请人： Susumu Haratani

发明人： Susumu Haratani

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11C11/16

摘要： A magnetic storage device includes a magnetoresistive element. A pair of side faces of the magnetoresistive element are at least partially opposed to end faces of a pair of open ends of a magnetic yoke. Moreover, the pair of side faces of the magnetoresistive element and the end faces of the pair of open ends of the magnetic yoke have predetermined angles, respectively. Thus, the magnetic storage device can reduce writing current while the magnetic storage device has a small and simple structure.

摘要翻译： 磁存储装置包括磁阻元件。 磁阻元件的一对侧面至少部分地与磁轭的一对开口端的端面相对。 此外，磁阻元件的一对侧面和磁轭的一对开口端的端面分别具有预定角度。 因此，磁存储装置可以减小写入电流，同时磁存储装置具有小而简单的结构。

公开(公告)号：US5470628A

公开(公告)日：1995-11-28

申请号：US340340

申请日：1994-11-14

申请人： Junji Tominaga ,  Susumu Haratani ,  Tokuhiko Handa ,  Ryo Inaba

发明人： Junji Tominaga ,  Susumu Haratani ,  Tokuhiko Handa ,  Ryo Inaba

IPC分类号： G11B7/0045 ,  G11B7/0055 ,  G11B7/24 ,  G11B7/241 ,  G11B7/243 ,  G11B7/257 ,  B32B3/00

CPC分类号： G11B7/252 ,  G11B7/00454 ,  G11B7/00557 ,  G11B7/24 ,  G11B2007/24306 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B2007/25715 ,  G11B2007/25716 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/2542 ,  G11B7/2595 ,  Y10S428/913 ,  Y10S430/146

摘要： An optical recording medium has a mask layer 4, an intermediate dielectric layer 5, a recording layer 6, and a reflective layer 8 on a transparent substrate 2. The recording layer 6 contains a recording material which changes its crystallographic structure upon exposure to recording light for recording information. The mask layer 4 contains a mask material which increases its light transmittance when melted and has a complex refractive index (n.sub.0 -ik.sub.0), of which the real part n.sub.0 drops by 1.0 or less and the imaginary part k.sub.0 drops by 0.25-1.0 when the mask material converts from a crystalline state to an amorphous or microcrystalline state. Signals can be reproduced from the medium with high C/N without resorting to reading light of shorter wavelength or an optical pickup objective lens having a larger numerical aperture and even when the linear velocity of the medium relative to recording and reproducing light is low.

摘要翻译： 光学记录介质在透明基板2上具有掩模层4，中间介电层5，记录层6和反射层8.记录层6包含在曝光到记录光时改变其结晶结构的记录材料 用于记录信息。 掩模层4包含当熔化时增加其透光率并且具有复数折射率（n0-ik0）的掩模材料，其中实部n0下降1.0或更小，虚部k0下降0.25-1.0 掩模材料从晶体状态转变为非晶态或微晶状态。 信号可以从具有高C / N的介质再现，而不需要使用较短波长的读取光或具有较大数值孔径的光学拾取物镜，甚至当介质相对于记录和再现光的线速度较低时。