摘要:
There is provided a magnetic memory device capable of reading information even with a lower power supply voltage.The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.
摘要:
To provide a magnetic memory cell that is capable of efficiently changing the magnetization directions of magneto-sensitive layers. A magnetic memory cell comprises an annular magnetic layer 4a through which extends a write bit line 5a that generates a magnetic field, and a TMR film S20a configured so as to include: a first magneto-sensitive layer 14a, a magnetization direction of which is changed by the magnetic field in the annular magnetic layer 4a; and a magnetoresistive effect revealing body 20a disposed on a surface of the first magneto-sensitive layer 14a so that an electric current flows in a direction perpendicular to a laminating surface of the laminate, and the first magneto-sensitive layer 14a has a thickness thereof set in a range of not less than 0.5 nm to not more than 40 nm.
摘要:
The present invention is directed to provide a magnetic head that is capable of effectively preventing TA noise.A slider 1 is provided with air bearing surfaces 111 and 121. Electromagnetic conversion elements 2 and 3, which are provided toward the trailing edge TR of the slider 1, perform electromagnetic conversion at the air bearing surfaces 111 and 121. The slider 1 is provided with indented portions 114 and projecting portions 115 at the air bearing surfaces 111 and 121 where the electromagnetic conversion elements 2 and 3 are provided. The indented portions 114 are provided in the areas corresponding to the width W2 of the electromagnetic conversion elements 2 and 3 viewed in the direction of the track width further toward the trailing edge TR than the electromagnetic conversion elements 2 and 3. The projecting portions 115 are provided adjacent to the indented portions 114 further projecting out compared to the indented portions 114.
摘要:
In a magnetic recording and reproducing apparatus of a type wherein a magnetic disk having a magnetic recording layer formed on a rigid substrate is rotated at a high speed and magnetic recording and reproduction are conducted by the magnetic head disposed on the surface of the disk, the magnetic recording and reproducing apparatus being characterized in that the magnetic recording and reproducing are conducted by the magnetic head which is caused to fly from the magnetic disk at at least an area of the outermost cylinder of the magnetic disk and is caused to be substantially in contact with the surface of magnetic disk at at least an innermost cylinder of the magnetic disk.
摘要:
In a magnetic disk supporting device of a type that the longitudinal direction of the supporting device extends in the tangential direction of the tracks of a magnetic disk, the direction of float rails on the slider of the magnetic head is the same as the longitudinal direction of the supporting device, and the slider is fixed to the lower surface of a central tongue portion constituting a part of the supporting device at a position that the front end of the slider does not overlap with a lateral frame as a part of the supporting device, whereby stable operation of the magnetic head can be obtained.
摘要:
A vertical recording system using a rigid disk medium with high recording density has a substrate made of alumina silicate resin glass and a vertical magnetic anisotropic film located on said substrate. The anisotropic film has an easy axis of magnetization in the thickness direction of the film, and the hard axis of magnetization in the film plane. The maximum surface roughness R.sub.max of said disk is less than 50 .ANG., and a magnetic recording head which moves relative to the medium operates with said head contacted with the medium. A recording density higher than 200 KFRPI (kilo flux reversal per inch) is obtained by the present invention.
摘要:
There is provided a magnetic memory device capable of reading information even with a lower power supply voltage.The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodies 2a, 2b are disposed in each of the storage cells 1, and each storage cell includes: a first stage circuit 41 that supplies currents Ib1, Ib2 for detecting resistances of magnetoresistive effect revealing bodies 2a, 2b; an X-direction address decoder circuit 32 that supplies currents Iw1, Iw2 to the magnetoresistive effect revealing bodies 2a, 2b; and a current control circuit (constant current circuit 25n) that carries out control so that the total of the current Ib1 and the current Iw1 and the total of the current Iw2 and the current Ib2 are respectively constant.
摘要:
The present invention provides a magnetic memory device based on a novel driving method realizing reliable writing and a method of writing the magnetic memory device. Four parallel portions are formed in a pair of loop-shaped write lines (6Xn) and (6Yn). Magnetoresistive devices (12A) and (12B) disposed in the parallel portion in an upper stage construct a memory cell (12Ev), and magnetoresistive devices (12A) and (12B) disposed in the parallel portion in a lower stage construct a memory cell (12Od). When current in the direction from the drive point A to the drive point B is passed from the current drives (123n) and (133n), the directions of the currents in the write lines (6Xn) and (6Yn) are aligned in the parallel portion of the memory cell (12Ev) but are opposite to each other in the parallel portion in the memory cell (12Od). In the memory cell (12Ev), induced magnetic fields enhance each other, and the magnetization directions of the magneto-sensitive layers of the magnetoresistive devices (12A) and (12B) are anti-parallel with each other. In the memory cell (12Od), the induced magnetic fields cancel each other out.
摘要:
Each memory cell is constituted by a pair of magnetic memory elements. The magnetic memory elements are connected at one ends to sense bit lines, and at the other ends to a sense word line through a pair of reverse current preventing diodes, respectively. A constant current circuit is disposed on the grounded side of the sense word line. The constant current circuit has a function of fixing a current flowing through the sense word line, and is constituted by a constant voltage generating diode, a transistor and a current limiting resistor.
摘要:
The present invention relates to an improvement in the write pole structure at a thin film magnetic head. At a write element, a gap film is provided between a first pole portion and a second pole portion. The first pole portion includes a second magnetic film adjacent the gap film and a first magnetic film adjacent the second magnetic film. The second pole portion includes a third magnetic film and a fourth magnetic film. The third magnetic film is provided adjacent to the gap film. The fourth magnetic film is provided adjacent to the third magnetic film. The surface of the fourth magnetic film facing opposite the medium is set within a width W21 of the third magnetic film in the direction of the tracks at its surface facing opposite the medium. In other words, the width W21 of the third magnetic film at the surface facing opposite the medium and a width W22 of the fourth magnetic film at its surface facing opposite the medium satisfy a relationship expressed as W22.ltoreq.W21. Thus, unnecessary magnetic recording occurring due to leaked magnetic field is prevented.