公开(公告)号：US4691223A

公开(公告)日：1987-09-01

申请号：US795464

申请日：1985-11-06

申请人： Susumu Murakami ,  Teruyuki Kagami ,  Tsutomu Yatsuo ,  Masaaki Takahashi

发明人： Susumu Murakami ,  Teruyuki Kagami ,  Tsutomu Yatsuo ,  Masaaki Takahashi

IPC分类号： H01L29/73 ,  H01L21/314 ,  H01L21/331 ,  H01L29/06 ,  H01L29/40 ,  H01L29/732 ,  H01L29/74 ,  H01L27/02

CPC分类号： H01L29/405 ,  Y10S257/905

摘要： A semiconductor device includes a semiconductor substrate having at least three semiconductor layers of alternately different conductivity types between a pair of principal surfaces. A pair of main electrodes are kept in low-resistance contact with the outermost ones of the semiconductor layers. A surface-passivation insulating film is provided on an exposed surface of the semiconductor substrate. A resistive material sheet is provided on the insulating film and connected electrically to semiconductor layers having their potentials substantially equal to the main electrodes.

摘要翻译： 半导体器件包括在一对主表面之间具有交替不同导电类型的至少三个半导体层的半导体衬底。 一对主电极与最外面的半导体层保持低电阻接触。 表面钝化绝缘膜设置在半导体衬底的暴露表面上。 电阻材料片设置在绝缘膜上并与其电位基本上等于主电极的半导体层电连接。

公开(公告)号：US4151502A

公开(公告)日：1979-04-24

申请号：US787841

申请日：1977-04-15

申请人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

发明人： Yasutoshi Kurihara ,  Tetuo Kosugi ,  Teruyuki Kagami ,  Satoshi Shimada ,  Yasumasa Matsuda ,  Kazuji Yamada

IPC分类号： G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  G01B11/16

CPC分类号： G01L1/2293 ,  G01L9/0002 ,  H01L29/84 ,  Y10S73/04 ,  Y10T29/49103

摘要： A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.

摘要翻译： 半导体换能器包括由单晶半导体材料构成的半导体应变计和形成在单晶半导体材料的第一主表面中的应变感测区域，以及通过合金材料耦合到半导体应变计的应变测量构件 。 电绝缘层连接到单晶半导体材料的第二主表面，该第二主表面通过合金材料耦合到应变测量部件。 绝缘层延伸到单晶半导体材料的侧表面，从而覆盖同一侧。

公开(公告)号：US5520297A

公开(公告)日：1996-05-28

申请号：US260369

申请日：1994-06-14

申请人： Teruyuki Kagami ,  Sakae Yaita ,  Niro Katane ,  Mitsuo Tanabe ,  Yoshinori Nakayama ,  Hidetoshi Satoh

发明人： Teruyuki Kagami ,  Sakae Yaita ,  Niro Katane ,  Mitsuo Tanabe ,  Yoshinori Nakayama ,  Hidetoshi Satoh

IPC分类号： H01L21/027 ,  G03F1/20 ,  G03F1/40 ,  B44C1/22 ,  C25F3/00

CPC分类号： G03F1/20 ,  Y10S438/928 ,  Y10T428/24273

摘要： A semiconductor substrate has a plurality of chip portions and chip separating portions for partitioning the plurality of chip portions into each other. The plurality of chip portions and the separating portions are etched on one side of the semiconductor substrate so that each of the plurality of chip portions is provided with stencil patterns. Furthermore, the plurality of chip portions and chip separating portions are etched on the other side of the semiconductor substrate so that the stencil patterns are exposed and the plurality of chip portions are capable of being substantially separated from each other.

摘要翻译： 半导体衬底具有多个芯片部分和用于将多个芯片部分彼此分隔的芯片分离部分。 多个芯片部分和分离部分被蚀刻在半导体衬底的一侧上，使得多个芯片部分中的每一个设置有模板图案。 此外，在半导体基板的另一侧蚀刻多个芯片部分和芯片分离部分，使得模板图案被暴露，并且多个芯片部分能够彼此基本分离。