公开(公告)号：US20110110752A1

公开(公告)日：2011-05-12

申请号：US12883602

申请日：2010-09-16

申请人： Susumu TAUCHI ,  Hideaki Kondo ,  Teruo Nakata ,  Keita Nogi ,  Atsushi Shimoda ,  Takafumi Chida

发明人： Susumu TAUCHI ,  Hideaki Kondo ,  Teruo Nakata ,  Keita Nogi ,  Atsushi Shimoda ,  Takafumi Chida

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67196 ,  H01L21/67766 ,  H01L21/67778

摘要： The invention provides a vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same, comprising an atmospheric transfer chamber having a plurality of cassette stands, a lock chamber arranged on a rear side of the atmospheric transfer chamber, and a first vacuum transfer chamber connected to a rear side of the lock chamber, wherein the first vacuum transfer chamber does not have any vacuum processing chamber connected thereto and has transfer intermediate chambers connected thereto, and the transfer intermediate chambers have subsequent vacuum transfer chambers connected thereto, and wherein the wafers are transferred via the lock chamber to the first vacuum transfer chamber to be processed in each of the subsequent vacuum processing chambers, which are further transferred via any of the transfer intermediate chambers connected to the first vacuum transfer chamber to the subsequent vacuum transfer chambers, and the respective wafers transferred to the subsequent vacuum transfer chambers other than the first vacuum transfer chamber are transferred to the respective vacuum processing chambers connected to each of the vacuum processing chambers and processed therein.

摘要翻译： 本发明提供了一种半导体处理基板的真空处理系统和使用该真空处理方法的真空处理方法，包括具有多个盒架的大气传送室，布置在大气传送室后侧的锁定室，以及第一 真空传送室连接到锁定室的后侧，其中第一真空传送室不具有连接到其上的任何真空处理室，并且具有连接到其上的传送中间室，并且传送中间室具有连接到其上的随后的真空传送室， 其中所述晶片经由所述锁定室传送到所述第一真空传送室，以在随后的每个真空处理室中被处理，所述真空处理室进一步通过连接到所述第一真空传送室的任何转移中间室转移到随后的真空转印 室和相应的晶片tr 推送到除了第一真空转移室之后的后续真空转移室被转移到连接到每个真空处理室的各个真空处理室中并在其中处理。

公开(公告)号：US20110110751A1

公开(公告)日：2011-05-12

申请号：US12871333

申请日：2010-08-30

申请人： Susumu TAUCHI ,  Hideaki Kondo ,  Teruo Nakata ,  Keita Nogi ,  Atsushi Shimoda ,  Takafumi Chida

发明人： Susumu TAUCHI ,  Hideaki Kondo ,  Teruo Nakata ,  Keita Nogi ,  Atsushi Shimoda ,  Takafumi Chida

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/67769 ,  Y10S414/139

摘要： A vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same comprises an atmospheric transfer chamber having a plurality of cassette stands for transferring a wafer, a lock chamber for storing the wafer transferred from the atmospheric transfer chamber, a first vacuum transfer chamber to which the wafer from the lock chamber is transferred, a transfer intermediate chamber connected to the first vacuum transfer chamber, a second vacuum transfer chamber connected to the transfer intermediate chamber, at least one vacuum processing chamber connected to the first vacuum transfer chamber, and two or more vacuum processing chambers connected to a rear side of the second vacuum transfer chamber, wherein the number of vacuum processing chambers connected to the first vacuum transfer chamber is smaller than the number of vacuum processing chambers connected to the second vacuum transfer chamber, or the number of use of vacuum processing chambers connected to the first vacuum transfer chamber is restricted to one.

摘要翻译： 半导体处理基板的真空处理系统和使用其的真空处理方法包括具有多个用于传送晶片的盒架的大气传送室，用于存储从大气传送室转移的晶片的锁定室，第一真空 传送室，来自锁定室的晶片被转印到该传送室，连接到第一真空传送室的传送中间室，连接到传送中间室的第二真空传送室，连接到第一真空传送室的至少一个真空处理室 以及连接到第二真空传送室的后侧的两个或更多个真空处理室，其中连接到第一真空传送室的真空处理室的数量小于连接到第二真空传送室的真空处理室的数量 ，或使用真空加工台数 连接到第一真空传送室的器件被限制为一个。

公开(公告)号：US20110259522A1

公开(公告)日：2011-10-27

申请号：US13177076

申请日：2011-07-06

申请人： Akitaka MAKINO ,  Youji TAKAHASHI ,  Minoru SORAOKA ,  Hideki KIHARA ,  Susumu TAUCHI

发明人： Akitaka MAKINO ,  Youji TAKAHASHI ,  Minoru SORAOKA ,  Hideki KIHARA ,  Susumu TAUCHI

IPC分类号： C23F1/08

CPC分类号： H01L21/6719 ,  H01L21/67017 ,  Y10S414/135 ,  Y10S414/139

摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.

摘要翻译： 一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元， 用于向腔室供应气体的处理室。

公开(公告)号：US20130142595A1

公开(公告)日：2013-06-06

申请号：US13592408

申请日：2012-08-23

申请人： Takahiro SHIMOMURA ,  Yoshifumi OGAWA ,  Susumu TAUCHI

发明人： Takahiro SHIMOMURA ,  Yoshifumi OGAWA ,  Susumu TAUCHI

IPC分类号： H01L21/677

CPC分类号： H01L21/67161 ,  H01L21/67184

摘要： A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.

摘要翻译： 真空处理装置包括一排在锁室后面彼此连接的真空传送室的容器，通过减压的真空传送容器的排的内部被转移的晶片，设置在真空传送容器的容器之间的中间室 在真空传送室中处理多个处理单元，包括分别连接到真空传送室的容器的左侧壁或右侧壁的处理容器和晶片，以及构成连接处理单元的旁路的旁路室，其中， 只有从锁定室转移到处理单元之一的晶片或在一个处理单元中被处理并且被转移到锁定室的晶片被传送通过真空传送室的容器。

公开(公告)号：US20100043976A1

公开(公告)日：2010-02-25

申请号：US12240293

申请日：2008-09-29

申请人： Seiichi WATANABE ,  Naoki YASUI ,  Susumu TAUCHI ,  Yasuhiro NISHIMORI

发明人： Seiichi WATANABE ,  Naoki YASUI ,  Susumu TAUCHI ,  Yasuhiro NISHIMORI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32293 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/2001

摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.

摘要翻译： 等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室 单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给 房间。

公开(公告)号：US20100171061A1

公开(公告)日：2010-07-08

申请号：US12651701

申请日：2010-01-04

申请人： Susumu TAUCHI ,  Akitaka Makino

发明人： Susumu TAUCHI ,  Akitaka Makino

IPC分类号： F16K51/00

CPC分类号： H01L21/67126 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.

摘要翻译： 本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。 真空处理装置包括其内部减压的真空容器; 设置在真空容器的壁中的开口，用于将内部与其外部连通，并且待处理样品通过该开口被取出; 阀体701，其设置在所述壁的外侧，用于气密地密封或打开所述开口; 驱动单元，用于驱动阀体进行密封或打开操作，驱动单元包括第一构件705，第一构件705联接到作为致动器的操作的结果沿基本线性的第一方向移动的致动器702;第二构件 构件706，其联接到第一构件705，其沿着与第一方向相交的基本上线性的第二方向移动;以及阀体701，其联接到由于第二构件的移动而密封开口的第二构件。