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公开(公告)号：US20050051089A1
公开(公告)日：2005-03-10
申请号：US10968249
申请日：2004-10-20
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.
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公开(公告)号：US06837937B2
公开(公告)日：2005-01-04
申请号：US10228048
申请日：2002-08-27
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.
摘要翻译： 在减压气氛中用于等离子体处理的常规等离子体处理装置需要作为消耗品频繁地代替诸如地球构件的部件，因为绝缘处理层和衬底本身由于等离子体和杂质而被减薄 在这些变薄的材料中扩散到等离子体中，导致对诸如晶片的样品的不利影响，以及由于等离子体而导致的绝缘处理层的变薄，并且导致绝缘处理层的变薄的电致效应导致了 等离子体。 本发明通过使用由主要由氧化铝组成的焙烧材料形成的导电陶瓷，用于在等离子体处理装置中的等离子体处理装置中用于待处理样品例如晶片的减压气氛 。
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3.发明申请公开(公告)号：US20060157198A1
公开(公告)日：2006-07-20
申请号：US11065084
申请日：2005-02-25
申请人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
发明人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3255 , H01J37/32009
摘要： Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.
摘要翻译： 提供了一种等离子体处理装置，其包括作为在等离子体处理室中面向等离子体的构件，由通过将石英或锗中的导电材料并入作为非晶基材而制备的材料构成的构件。
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公开(公告)号：US20050199183A1
公开(公告)日：2005-09-15
申请号：US10795329
申请日：2004-03-09
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , C23C16/5096 , H01J37/32467 , H01J37/32477
摘要： The purpose of the invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The present plasma processing apparatus for processing a substrate placed on a substrate holder disposed in a processing chamber using a plasma generated in the processing chamber comprises at least one member detachably mounted on an inner wall surface of the processing chamber having a portion coated with a material different from a material coating the other portion.
摘要翻译： 本发明的目的是提供能够长时间稳定地处理衬底的等离子体处理装置。 使用在处理室中产生的等离子体处理设置在处理室中的基板保持器上的基板的本等离子体处理装置包括至少一个可拆卸地安装在处理室的内壁表面上的部件，该部件具有涂覆有材料的部分 不同于涂覆其他部分的材料。
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5.发明申请Plasma etching apparatus and method for forming inner wall of plasma processing chamber 审中-公开等离子体蚀刻装置及等离子体处理室内壁形成方法公开(公告)号：US20070215278A1
公开(公告)日：2007-09-20
申请号：US11367597
申请日：2006-03-06
IPC分类号： H01L21/306
CPC分类号： H01J37/32504 , H01J37/32477
摘要： A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 μm or less to have heat resistance.
摘要翻译： 提供一种等离子体蚀刻装置，其可以防止构成蚀刻处理室或其内部组分的铝基板的腐蚀，从而避免由于喷涂涂层的飞散而导致的生产率降低。 在等离子体蚀刻装置中，阳极氧化膜设置在耐等离子体性优异的陶瓷喷涂涂层之间，蚀刻处理室及其内部由铝合金制成。 阳极氧化膜的厚度为5μm以下，具有耐热性。
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公开(公告)号：US20050193951A1
公开(公告)日：2005-09-08
申请号：US10793782
申请日：2004-03-08
申请人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译： 本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。 等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面 位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，
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公开(公告)号：US20080236744A1
公开(公告)日：2008-10-02
申请号：US11896293
申请日：2007-08-30
申请人： Muneo Furuse , Shingo Kimura , Tadayoshi Kawaguchi
发明人： Muneo Furuse , Shingo Kimura , Tadayoshi Kawaguchi
IPC分类号： H01L21/306
CPC分类号： H01J37/32477 , H01J37/32623
摘要： To provide a plasma processing equipment that can reduce the particles or contamination in a sample by suppressing the occurrence of an abnormal electric discharge during processing. The plasma processing equipment that employs a plasma process using a halogen-based gas in fabricating a semiconductor device, wherein a plasma sprayed coating film is applied to a surface of a well, such as a wall in a processing chamber, which plasma is in constant with, and wherein a conductor is incorporated into a material of this plasma sprayed coating film, thereby making the plasma sprayed coating film conductive.
摘要翻译： 提供能够通过抑制处理时的异常放电的发生而能够减少样品中的颗粒或污染的等离子体处理设备。 在制造半导体器件中采用基于卤素气体的等离子体处理设备的等离子体处理设备，其中将等离子体喷涂的涂膜施加到诸如处理室中的壁的表面，该等离子体处于恒定的状态 并且其中将导体结合到该等离子体喷涂涂膜的材料中，从而使等离子体喷涂涂膜成为导电性。
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公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译： 提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器 调节惰性气体的流量。 当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力 工艺气体供应管道的内壁蒸发。
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公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译： 提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器 调节惰性气体的流量。 当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力 工艺气体供应管道的内壁蒸发。
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公开(公告)号：US08197704B2
公开(公告)日：2012-06-12
申请号：US12397447
申请日：2009-03-04
申请人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
发明人： Takahisa Hashimoto , Hideki Kihara , Muneo Furuse
IPC分类号： C03C15/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67017
摘要： The invention provides a plasma processing apparatus and a method for purging the apparatus, capable of preventing damage of components caused by pressure difference during purging operation of a vacuum reactor, and capable of preventing residual processing gas from remaining in the vacuum reactor. Inert gas is introduced through an inert gas feed port 233 on a side wall of a depressurized processing chamber (V1) 226 of a plasma processing apparatus, and the interior of the processing chamber (V1) 226 is brought to predetermined pressure by the inert gas, and thereafter, the inert gas is supplied to processing gas supply paths 213 and 216 (V2) communicated to a plurality of through holes 224 for introducing processing gas, so as to introduce the inert gas through the plurality of through holes 224 into the processing chamber (V1) 226.
摘要翻译： 本发明提供一种等离子体处理装置和一种清洗装置的方法，能够防止在真空反应器的净化操作期间由压力差引起的部件的损坏，并且能够防止残留的处理气体残留在真空反应器中。 惰性气体通过等离子体处理装置的减压处理室（V1）226的侧壁上的惰性气体供给口233引入，处理室（V1）226的内部被惰性气体 然后将惰性气体供给到与多个用于引入处理气体的通孔224连通的处理气体供给路径213,216（V2），以将惰性气体通过多个通孔224引入到处理 室（V1）226。
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