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1.发明申请Plasma etching apparatus and method for forming inner wall of plasma processing chamber 审中-公开等离子体蚀刻装置及等离子体处理室内壁形成方法公开(公告)号：US20070215278A1
公开(公告)日：2007-09-20
申请号：US11367597
申请日：2006-03-06
IPC分类号： H01L21/306
CPC分类号： H01J37/32504 , H01J37/32477
摘要： A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 μm or less to have heat resistance.
摘要翻译： 提供一种等离子体蚀刻装置，其可以防止构成蚀刻处理室或其内部组分的铝基板的腐蚀，从而避免由于喷涂涂层的飞散而导致的生产率降低。 在等离子体蚀刻装置中，阳极氧化膜设置在耐等离子体性优异的陶瓷喷涂涂层之间，蚀刻处理室及其内部由铝合金制成。 阳极氧化膜的厚度为5μm以下，具有耐热性。
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公开(公告)号：US20080314321A1
公开(公告)日：2008-12-25
申请号：US12203804
申请日：2008-09-03
申请人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/458
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译： 本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。 等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面 位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体并包含Y 2 O 3，Yb 2 O 3或YF 3的材料，或 它们的主要成分。
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公开(公告)号：US20050199183A1
公开(公告)日：2005-09-15
申请号：US10795329
申请日：2004-03-09
IPC分类号： C23C16/00
CPC分类号： C23C16/4404 , C23C16/5096 , H01J37/32467 , H01J37/32477
摘要： The purpose of the invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The present plasma processing apparatus for processing a substrate placed on a substrate holder disposed in a processing chamber using a plasma generated in the processing chamber comprises at least one member detachably mounted on an inner wall surface of the processing chamber having a portion coated with a material different from a material coating the other portion.
摘要翻译： 本发明的目的是提供能够长时间稳定地处理衬底的等离子体处理装置。 使用在处理室中产生的等离子体处理设置在处理室中的基板保持器上的基板的本等离子体处理装置包括至少一个可拆卸地安装在处理室的内壁表面上的部件，该部件具有涂覆有材料的部分 不同于涂覆其他部分的材料。
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公开(公告)号：US20050193951A1
公开(公告)日：2005-09-08
申请号：US10793782
申请日：2004-03-08
申请人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译： 本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。 等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面 位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，
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公开(公告)号：US06897403B2
公开(公告)日：2005-05-24
申请号：US10378601
申请日：2003-03-05
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01L21/687 , B23K9/00
CPC分类号： H01L21/6875 , H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.
摘要翻译： 提供了能够更精确地处理工件的表面的等离子体处理装置。 用于在样品和样品台之间提供气体以产生用于处理样品的等离子体的等离子体处理装置包括调节装置，用于改变供给到样品的中心侧的压力和供给到外周的气体的压力 作为样品进行的处理。
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公开(公告)号：US06664738B2
公开(公告)日：2003-12-16
申请号：US10083381
申请日：2002-02-27
IPC分类号： H01J724
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.
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7.发明申请公开(公告)号：US20060121195A1
公开(公告)日：2006-06-08
申请号：US11327447
申请日：2006-01-09
申请人： Ryujiro Udo , Masatsugu Arai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Masanori Kadotani
CPC分类号： H01L21/67069 , C25D11/005 , C25D11/026 , C25D11/04 , H01J37/32082 , H01L21/6831 , H01L21/6833
摘要： An electrostatic chuck comprising an insulating base 6, a plurality of conductive aluminum thin films 4a, 4b deposited on the surface of the base, and alumite films 2a, 2b formed by anodizing the surfaces of the conductive thin films 4a, 4b, wherein the conductive thin films 4a, 4b are each provided with a DC voltage of a different polarity so that a surface chucking a wafer 7 is electrostatically bipolar.
摘要翻译： 一种静电卡盘，其包括绝缘基体6，沉积在基底表面上的多个导电铝薄膜4a，4b和通过阳极氧化导电薄膜4a的表面形成的耐酸铝膜2a， 如图4b所示，其中导电薄膜4a，4b分别具有不同极性的DC电压，使得夹持晶片7的表面是静电双极的。
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公开(公告)号：US06838833B2
公开(公告)日：2005-01-04
申请号：US10670288
申请日：2003-09-26
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01J7/24
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
摘要翻译： 一种等离子体处理装置，其具有控制电极块的温度以控制半导体晶片的温度的系统的保持台。 电极块在其内侧和外侧设置有至少第一和第二独立温度控制器，并且在第一和第二温度控制器之间的电极块中设置用于抑制热传递的狭缝。
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公开(公告)号：US20140174708A1
公开(公告)日：2014-06-26
申请号：US14236095
申请日：2011-08-17
申请人： Yuki Akiyama , Tadashi Osaka , Masatsugu Arai
发明人： Yuki Akiyama , Tadashi Osaka , Masatsugu Arai
CPC分类号： F16K17/36 , B60H1/00271 , B60H1/00278 , B60H1/00978 , B60K11/02 , B60K11/04 , B60K11/06 , B60K2001/003 , B60K2001/005 , B60K2001/006 , B60L1/003 , B60L3/0046 , B60L3/0069 , B60L11/1874 , B60L2240/36 , B60L2240/545 , B60R16/00 , B60Y2306/01 , B60Y2306/05 , H01M10/625 , H01M10/6567 , H01M10/6568 , Y02T10/7005 , Y02T10/705
摘要： A temperature-adjustment system for a vehicle includes temperature-adjustment passages and obtained by circularly connecting a battery, an inverter, a DC/DC converter, a traveling motor, and a pump that circulates the heat medium that adjusts temperatures by cooling/heating the heat generation elements, are provided. The temperature-adjustment passages and are provided with proportional valves that interrupt the flow of the heat medium and adjust the flow volume of the heat medium, an air flow-in part that introduces air into the battery temperature-adjustment passage, and a heat medium discharge part that discharges the heat medium from the temperature-adjustment passage to outside of the vehicle. The proportional valve, air flow-in part, battery, pump, and heat medium discharge part are preferably arranged in that order, and the proportional valve is closed and an air take-in valve and a heat medium discharge valve are opened.
摘要翻译： 车辆温度调节系统包括温度调节通道，其通过循环连接电池，逆变器，DC / DC转换器，行进电动机和使通过冷却/加热调节温度的热介质循环的泵而获得 提供发热元件。 温度调节通道设置有比例阀，其阻断热介质的流动并调节热介质的流量，将空气引入部分，将空气引入电池温度调节通道;以及热介质 将热介质从温度调节通道排出到车辆外部的排出部。 比例阀，空气流入部分，电池，泵和热介质排出部优选按顺序布置，并且比例阀关闭，并且打开空气吸入阀和热介质排出阀。
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公开(公告)号：US20130118820A1
公开(公告)日：2013-05-16
申请号：US13577196
申请日：2010-08-25
申请人： Atsushi Yokoyama , Masatsugu Arai , Tadashi Osaka , Itsuro Sawada
发明人： Atsushi Yokoyama , Masatsugu Arai , Tadashi Osaka , Itsuro Sawada
CPC分类号： B60K11/02 , B60H1/00385 , B60H1/08 , B60K1/00 , B60K11/04 , B60K2001/003 , B60K2001/005 , B60K2001/006 , B60L11/1874 , B60L11/1892 , B60L2200/26 , Y02T10/705 , Y02T90/34
摘要： An electric drive system for a vehicle includes: an electric drive unit that electrically drives the vehicle; and a cooling unit that cools the electric drive unit, wherein: the electric drive unit and the cooling unit are mounted at a body frame of the vehicle via an elastic support member, the electric drive unit and the cooling unit being configured as an integrated unit.
摘要翻译： 一种用于车辆的电驱动系统包括：电驱动车辆的电驱动单元; 以及冷却单元，其冷却所述电驱动单元，其中：所述电驱动单元和所述冷却单元经由弹性支撑构件安装在所述车辆的车身框架处，所述电驱动单元和所述冷却单元被配置为集成单元 。
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