公开(公告)号：US08282334B2

公开(公告)日：2012-10-09

申请号：US12221268

申请日：2008-08-01

Applicant: Sven Lindfors ,  Juha A. Kustaa-Adolf Poutiainen

Inventor： Sven Lindfors ,  Juha A. Kustaa-Adolf Poutiainen

IPC: H01L21/677

CPC classification number: C23C16/45546 ,  C23C16/4401 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67757

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract translation: 本发明涉及其中多个ALD反应器相对于彼此以图案放置的方法和设备，每个ALD反应器被配置为接收一批用于ALD处理的基底，并且每个ALD反应器包括可从 顶端。 使用装载机器人执行多个加载顺序。 每个加载顺序包括拾取在存储区域或搁板中承载一批基板的基板保持器，以及将所述基板保持器与所述一批基板移动到所讨论的ALD反应器的反应室中。

公开(公告)号：US20100028122A1

公开(公告)日：2010-02-04

申请号：US12221268

申请日：2008-08-01

Applicant: Sven Lindfors ,  Juha A. Kustaa-Adolf Poutiainen

Inventor： Sven Lindfors ,  Juha A. Kustaa-Adolf Poutiainen

IPC: B65H1/00 ,  C23C16/458 ,  B25J15/00

CPC classification number: C23C16/45546 ,  C23C16/4401 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67757

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being figured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract translation: 本发明涉及其中多个ALD反应器相对于彼此以图案放置的方法和设备，每个ALD反应器被计算为接收一批用于ALD处理的基底，并且每个ALD反应器包括可从 顶端。 使用装载机器人执行多个加载顺序。 每个加载顺序包括拾取在存储区域或搁板中承载一批基板的基板保持器，以及将所述基板保持器与所述一批基板移动到所讨论的ALD反应器的反应室中。

公开(公告)号：US20140335267A1

公开(公告)日：2014-11-13

申请号：US14359775

申请日：2011-11-22

Applicant: Sven Lindfors ,  Pekka J Soininen

Inventor： Sven Lindfors ,  Pekka J Soininen

IPC: C23C30/00

CPC classification number: C23C30/00 ,  C23C16/45546 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

Abstract: The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process, and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.

Abstract translation: 本发明涉及一种方法，其包括提供原子层沉积反应器的反应室模块，用于通过原子层沉积工艺处理一批衬底，并通过不同的途径在处理之前将批次的衬底加载到反应室模块中 该批次的基材在加工后卸载。 本发明还涉及相应的装置。

公开(公告)号：US08741062B2

公开(公告)日：2014-06-03

申请号：US12148885

申请日：2008-04-22

Applicant: Sven Lindfors ,  Pekka J. Soininen

Inventor： Sven Lindfors ,  Pekka J. Soininen

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC classification number: F16L53/00 ,  C23C16/4485 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45561 ,  Y10T137/6416

Abstract: An apparatus, such as an ALD (Atomic Layer Deposition) apparatus, including a precursor source configured for depositing material on a heated substrate in a deposition reactor by sequential self-saturating surface reactions. The apparatus includes an in-feed line for feeding precursor vapor from the precursor source to a reaction chamber and a structure configured for utilizing heat from a reaction chamber heater for preventing condensation of precursor vapor into liquid or solid phase between the precursor source and the reaction chamber. Also various other apparatus and methods are presented.

Abstract translation: 一种诸如ALD（原子层沉积）装置的装置，包括被配置用于通过连续的自饱和表面反应在沉积反应器中在加热的衬底上沉积材料的前体源。 该装置包括用于将前体蒸气从前体源供给到反应室的进料管线和被配置为利用来自反应室加热器的热量以防止前体蒸气冷凝到前体源和反应器之间的液体或固相的结构 房间。 还提出了各种其他装置和方法。

公开(公告)号：US08211235B2

公开(公告)日：2012-07-03

申请号：US11073052

申请日：2005-03-04

Applicant: Sven Lindfors ,  Juha Allan Kustaa-Adolf Poutiainen

Inventor： Sven Lindfors ,  Juha Allan Kustaa-Adolf Poutiainen

IPC: C23C16/00 ,  C23C16/458 ,  C23C16/46

CPC classification number: C23C16/45546 ,  C23C16/45525 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/52

Abstract: An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.

Abstract translation: 公开了一种用于通过在加热表面上的顺序自饱和化学反应沉积保形薄膜的装置。 该装置包括可移动单盖或双盖系统，其具有附接到反应室盖的基板保持架。 在其他实施例中，该装置包括排气流塞，气体分配插入件，局部加热器或小型系统。 还包括适用于ALD（原子层沉积）的各种方法。

公开(公告)号：US20090181169A1

公开(公告)日：2009-07-16

申请号：US12361139

申请日：2009-01-28

Applicant: Tuomo Suntola ,  Sven Lindfors

Inventor： Tuomo Suntola ,  Sven Lindfors

IPC: C23C16/44

CPC classification number: C23C16/45525 ,  C23C16/455 ,  C23C16/45527 ,  C23C16/45546 ,  C30B25/10 ,  C30B25/14

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.

Abstract translation: 本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成 一个薄膜。 根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应 的基板，用于在所述基板上形成固态薄膜化合物。 根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。 由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

公开(公告)号：US06889864B2

公开(公告)日：2005-05-10

申请号：US10187142

申请日：2002-06-28

Applicant: Sven Lindfors ,  Jan von Zweygbergk ,  Marko J. Kukkonen

Inventor： Sven Lindfors ,  Jan von Zweygbergk ,  Marko J. Kukkonen

IPC: C23C16/44 ,  C23C16/448 ,  F16L23/10 ,  B65D45/32

CPC classification number: C23C16/4409 ,  C23C16/4481 ,  F16L23/10

Abstract: The invention relates to a source chemical container assembly, comprising a metal container functioning as a vacuum chamber and provided with a removable closure, which removable closure seals against the metal container with a metal seal. In order to facilitate easy recharging of the container assembly, compressive force is applied to the metal seal through a tension chain. In a preferred embodiment of the invention the metal seal and the tension chain are provided along a circumference of said metal container. The assembly can comprise an inner container in which the source chemical is contained.

Abstract translation: 本发明涉及一种源化学容器组件，其包括用作真空室的金属容器并且设置有可拆卸的封闭件，该可拆卸的封闭件用金属密封件密封在金属容器上。 为了便于对容器组件的容易再充电，通过张力链对金属密封件施加压缩力。 在本发明的优选实施例中，金属密封件和张紧链沿着所述金属容器的圆周设置。 组件可以包括容纳源化学品的内部容器。

公开(公告)号：US06783590B2

公开(公告)日：2004-08-31

申请号：US09835931

申请日：2001-04-16

Applicant: Sven Lindfors ,  Pekka T. Soininen

Inventor： Sven Lindfors ,  Pekka T. Soininen

IPC: C30B2514

CPC classification number: C30B25/14 ,  C23C16/4402 ,  C23C16/4482 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45561 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.

公开(公告)号：US20150125599A1

公开(公告)日：2015-05-07

申请号：US14400826

申请日：2012-05-14

Applicant: Sven Lindfors ,  Pekka J Soininen

Inventor： Sven Lindfors ,  Pekka J Soininen

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/442

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/4417 ,  C23C16/442 ,  C23C16/45502 ,  C23C16/45555

Abstract: A method includes receiving an atomic layer deposition (ALD) cartridge into a receiver of an ALD reactor by a quick coupling method. The ALD cartridge serves as an ALD reaction chamber, and the method includes processing surfaces of particulate material within the ALD cartridge by sequential self-saturating surface reactions.

Abstract translation: 一种方法包括通过快速耦合方法将原子层沉积（ALD）盒接收到ALD反应器的接收器中。 ALD筒用作ALD反应室，并且该方法包括通过顺序的自饱和表面反应处理ALD筒内颗粒材料的表面。

公开(公告)号：US07799300B2

公开(公告)日：2010-09-21

申请号：US12138358

申请日：2008-06-12

Applicant: Sven Lindfors ,  Jaako Hyvarinen

Inventor： Sven Lindfors ,  Jaako Hyvarinen

IPC: B01D53/56

CPC classification number: B01D53/34

Abstract: The present invention concerns a method and an apparatus for removing substances from gases discharged from gas phase reactors. In particular, the invention provides a method for removing substances contained in gases discharged from an ALD reaction process, comprising contacting the gases with a “sacrificial” material having a high surface area kept at essentially the same conditions as those prevailing during the gas phase reaction process. The sacrificial material is thus subjected to surface reactions with the substances contained in the gases to form a reaction product on the surface of the sacrificial material and to remove the substances from the gases. The present invention diminishes the amount of waste produced in the gas phase process and reduces wear on the equipment.

Abstract translation: 本发明涉及从气相反应器排出的气体中去除物质的方法和装置。 特别地，本发明提供了一种用于除去从ALD反应过程排出的气体中所含的物质的方法，包括使气体与具有高表面积的“牺牲”材料接触，所述“牺牲”材料保持在与气相反应期间基本相同的条件 处理。 因此牺牲材料与包含在气体中的物质进行表面反应，以在牺牲材料的表面上形成反应产物，并从气体中除去物质。 本发明减少了在气相工艺中产生的废物的量并减少了设备上的磨损。