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公开(公告)号:US20090121149A1
公开(公告)日:2009-05-14
申请号:US11937849
申请日:2007-11-09
申请人: Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
发明人: Svetlana Radovanov , Frank Sinclair , Peter L. Kellerman , Victor M. Benveniste , Robert Lindberg
IPC分类号: H01J3/18
CPC分类号: H01J37/1477 , H01J37/12 , H01J37/1475 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , H01J2237/24542 , H01J2237/31701
摘要: Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.
摘要翻译: 公开了用于成形离子束的技术。 在一个特定的示例性实施例中,可以将技术实现为用于成形离子束的装置。 该装置可以包括偏置在第一电压电位的入口电极,其中离子束进入入口电极,偏置在第二电压电位的出射电极,其中离子束离开出射电极,并且第一抑制电极和第二抑制电极 位于所述入射电极和所述出射电极之间的抑制电极,其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。
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公开(公告)号:US20070108390A1
公开(公告)日:2007-05-17
申请号:US11536992
申请日:2006-09-29
申请人: Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
发明人: Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
IPC分类号: H01J37/12
CPC分类号: H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要: A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要翻译: 公开了一种用于成形带状离子束的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于成形带状离子束的装置。 该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜,其中多个聚焦元件沿着孔的短边缘定位,并且其中每个聚焦元件被单独偏置并定向成形 带状离子束。
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3.
公开(公告)号:US20060029085A1
公开(公告)日:2006-02-09
申请号:US11037390
申请日:2005-01-16
申请人: Gordon Booman , John Boutotte , Robert Lindberg , Florent Mali , Patricia Mulligan , Jaimin Patel , Mark Sylor
发明人: Gordon Booman , John Boutotte , Robert Lindberg , Florent Mali , Patricia Mulligan , Jaimin Patel , Mark Sylor
IPC分类号: H04L12/56
CPC分类号: H04L41/22 , H04L41/00 , H04L41/065 , H04L41/507
摘要: Apparatus and methods for automatically processing and displaying information for managing equipment or services in a network. The information is automatically inserted into a hierarchical data structure, which can then presented in a ticker display for viewing by a user. The information concerning the network equipment or services may also be used to determine the users affected by particular network failures.
摘要翻译: 用于自动处理和显示用于管理网络中的设备或服务的信息的装置和方法。 该信息被自动地插入到分层数据结构中,然后可以将其呈现在一个代码显示中,供用户查看。 有关网络设备或服务的信息也可用于确定受特定网络故障影响的用户。
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公开(公告)号:US08003954B2
公开(公告)日:2011-08-23
申请号:US12339221
申请日:2008-12-19
申请人: John Slocum , Kevin M. Keen , Chris Campbell , Robert Lindberg , Stefan Casey
发明人: John Slocum , Kevin M. Keen , Chris Campbell , Robert Lindberg , Stefan Casey
IPC分类号: H01J37/08
CPC分类号: H01J37/3171 , H01J27/08 , H01J37/08 , H01J2237/006 , H01J2237/061 , H01J2237/082
摘要: An ion source has an arc chamber with an electron-emitting element and a repeller. A manifold assembly defines a cavity and a gas outlet configured to allow gas flow to the arc chamber. This gas outlet is closer to the repeller than the electron-emitting element. In one embodiment, the ion source has a first crucible and a second crucible. The first crucible and the second crucible are connected to the manifold assembly. In one instance, the crucibles have tamper-resistant features.
摘要翻译: 离子源具有具有电子发射元件和排斥器的电弧室。 歧管组件限定了空腔和气体出口,其构造成允许气体流动到电弧室。 该气体出口比电子发射元件更靠近排斥器。 在一个实施例中,离子源具有第一坩埚和第二坩埚。 第一坩埚和第二坩埚连接到歧管组件。 在一个实例中,坩埚具有防篡改特征。
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公开(公告)号:US08809800B2
公开(公告)日:2014-08-19
申请号:US12533318
申请日:2009-07-31
申请人: Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilhelm P. Platow , Alexander S. Perel
发明人: Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilhelm P. Platow , Alexander S. Perel
IPC分类号: H01J27/02 , H01J27/14 , H01J37/08 , H01J37/317
CPC分类号: H01J27/022 , H01J27/02 , H01J27/14 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/31705
摘要: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.
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公开(公告)号:US20130072008A1
公开(公告)日:2013-03-21
申请号:US13613964
申请日:2012-09-13
申请人: Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人: Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
IPC分类号: H01L21/265
CPC分类号: C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要: A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译: 公开了用于离子注入靶的技术。 根据一个示例性实施例,该技术可以被实现为用于离子注入靶的方法,所述方法包括:在离子源的电弧室中提供预定量的处理气体,所述处理气体含有植入物种类和植入物种 载体,其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中,其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。
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公开(公告)号:US20100024841A1
公开(公告)日:2010-02-04
申请号:US12533318
申请日:2009-07-31
申请人: Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilheim P. Platow , Alexander S. Perel
发明人: Bon-Woong Koo , Christopher R. Campbell , Craig R. Chaney , Robert Lindberg , Wilheim P. Platow , Alexander S. Perel
CPC分类号: H01J27/022 , H01J27/02 , H01J27/14 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/31705
摘要: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.
摘要翻译: 公开了一种离子源和清洁方法。 一个或多个加热单元放置在离离子源的内部体积附近,以便影响离子源内的温度。 在一个实施例中,离子源的一个或多个壁具有插入加热单元的凹部。 在另一个实施例中,离子源的一个或多个壁由导电电路和绝缘层构成。 通过利用离子源附近的加热单元,可以开发清洗离子源的新方法。 清洁气体流入离子源,其中它通过阴极,如在正常操作模式中,或通过加热单元产生的热量而被离子化。 由于升高的温度,清洁气体能够更有效地从离子源的壁去除残留物。
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公开(公告)号:US20090286420A1
公开(公告)日:2009-11-19
申请号:US12311119
申请日:2007-08-30
IPC分类号: H01R4/26
CPC分类号: H01R4/2412 , H01R9/0512 , H01R9/053
摘要: An arrangement (1) for the electrical earthing of an electrically conducting cable (2) with an outer insulating protective cover (3). The arrangement comprises a receiver (4) and a drop unit (5). The receiver (4) comprises a bottom element (6), two opposing side elements (7a, 7b), two opposing open sides (8a, 8b). The bottom element (6) and the side elements (7a, 7b) form together a cleft (9), which cleft (9) is the receiver of the said cable (2) for earthing. The drop unit (5) comprises not only a connection to earth (10), but also a penetration means (11), which connection to earth (10) and penetration means (11) are in electrical contact with each other. The drop unit (5) is connected to the receiver (4) in such a manner that the drop unit (5) is placed during earthing of the said cable (2) opposite to the bottom element (6) of the receiver (4), whereby the cable (2) when seen in cross section through a straight cable (2) and arrangement (1) transverse to the longitudinal direction of the cable (2) is surrounded by the arrangement (1), and the penetration means (11) has penetrated through the said outer insulating protective cover (3) on the cable (2), whereby contact with a conductor inside the cable (2) is obtained.
摘要翻译: 一种用于与外绝缘保护罩(3)电接地的导电电缆(2)的装置(1)。 该装置包括接收器(4)和液滴单元(5)。 接收器(4)包括底部元件(6),两个相对的侧部元件(7a,7b),两个相对的开口侧面(8a,8b)。 底部元件(6)和侧面元件(7a,7b)一起形成裂缝(9),该裂缝(9)是所述电缆(2)的接收器,用于接地。 液滴单元(5)不仅包括与地球(10)的连接,还包括与地球(10)和穿透装置(11)的连接彼此电接触的穿透装置(11)。 液滴单元(5)以与接收器(4)的底部元件(6)相对的所述电缆(2)的接地处放置放置单元(5)的方式连接到接收器(4) 其中当电缆(2)在垂直于电缆(2)的纵向方向的直线电缆(2)和布置(1)的横截面中观察时,由所述装置(1)和所述穿透装置(11)包围 )穿过电缆(2)上的所述外绝缘保护盖(3),从而获得与电缆(2)内的导体的接触。
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公开(公告)号:US08937003B2
公开(公告)日:2015-01-20
申请号:US13613964
申请日:2012-09-13
申请人: Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
发明人: Alexander S. Perel , Craig R. Chaney , Wayne D. LeBlanc , Robert Lindberg , Antonella Cucchetti , Neil J. Bassom , David Sporleder , James Young
CPC分类号: C23C14/48 , C23C14/564 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要: A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising: providing a predetermined amount of processing gas in an arc chamber of an ion source, the processing gas containing implant species and implant species carrier, where the implant species carrier may be one of O and H; providing a predetermined amount of dilutant into the arc chamber, wherein the dilutant may comprise a noble species containing material; and ionizing the processing gas and the dilutant.
摘要翻译: 公开了用于离子注入靶的技术。 根据一个示例性实施例,该技术可以被实现为用于离子注入靶的方法,所述方法包括:在离子源的电弧室中提供预定量的处理气体,所述处理气体含有植入物种类和植入物种 载体,其中种植体载体可以是O和H之一; 将预定量的稀释剂提供到所述电弧室中,其中所述稀释剂可包括含有贵重物质的材料; 并使处理气体和稀释剂电离。
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公开(公告)号:USD717159S1
公开(公告)日:2014-11-11
申请号:US29429740
申请日:2012-08-15
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