公开(公告)号：US20210238731A1

公开(公告)日：2021-08-05

申请号：US17115700

申请日：2020-12-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Hsi WANG ,  Yen-Yu CHEN ,  Yi-Chih CHEN ,  Shih Wei BIH

IPC分类号： C23C14/34 ,  H01L21/768 ,  H01L21/285 ,  H01J37/34 ,  C23C14/14

摘要： A physical vapor deposition (PVD) target for performing a PVD process is provided. The PVD target includes a backing plate and a target plate coupled to the backing plate. The target plate includes a sputtering source material and a dopant, with the proviso that the dopant is not impurities in the sputtering source material. The sputtering source material includes a diffusion barrier material.

公开(公告)号：US20230066870A1

公开(公告)日：2023-03-02

申请号：US17461725

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Hsi WANG ,  Yen-Yu CHEN

IPC分类号： H01L21/02 ,  H01L21/67

摘要： A deposition system is provided capable of extending the chamber running time by preventing the target and other components from deformation due to thermal stress from the sputtering process by maintaining the temperature within the predetermined temperature range. The deposition system includes a substrate process chamber, a target within the substrate process chamber, and a plurality of grooves formed on the target in a circular formation. The plurality of grooves includes a first groove on a center portion of the target and a second groove on a periphery portion of the target.

公开(公告)号：US20230307218A1

公开(公告)日：2023-09-28

申请号：US18317009

申请日：2023-05-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chia-Hsi WANG ,  Kun-Che HO ,  Yen-Yu CHEN

IPC分类号： H01J37/34 ,  H01L21/02 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01J37/3455 ,  H01L21/02631 ,  C23C14/3407 ,  C23C14/3442 ,  H01J37/3461 ,  H01J37/3435 ,  H01J37/3414 ,  H01J37/3405 ,  H01J37/3452 ,  C23C14/351

摘要： A method includes loading a wafer into a sputtering chamber, followed by depositing a film over the wafer by performing a sputtering process in the sputtering chamber. In the sputtering process, a target is bombarded by ions that are applied with a magnetic field using a magnetron. The magnetron includes a magnetic element over the target, an arm assembly connected to the magnetic element, a hinge mechanism connecting the arm assembly and a rotational shaft. The arm assembly includes a first prong and a second prong at opposite sides of the hinge mechanism. The magnetron further includes a controller that controls motion of the first arm assembly, enabling the first prong to revolve in an orbital motion path about the first hinge mechanism while the second prong remains stationary.

公开(公告)号：US20230069264A1

公开(公告)日：2023-03-02

申请号：US17461742

申请日：2021-08-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Hsi WANG ,  Yen-Yu CHEN

IPC分类号： H01J37/34 ,  C23C14/34

摘要： A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

公开(公告)号：US20220367161A1

公开(公告)日：2022-11-17

申请号：US17876489

申请日：2022-07-28

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chia-Hsi WANG ,  Kun-Che HO ,  Yen-Yu CHEN

IPC分类号： H01J37/34 ,  H01L21/02 ,  C23C14/34 ,  C23C14/35

摘要： A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.