公开(公告)号：US20230384211A1

公开(公告)日：2023-11-30

申请号：US18361777

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Jen YANG ,  Chung-Pin CHOU ,  Yan-Cheng CHEN ,  Kai-Lin Chuang ,  Jun-Xiu Liu ,  Sheng-Ching Kao

IPC: G01N21/05 ,  G01N21/95 ,  G01N15/02 ,  G01F1/663

CPC classification number: G01N21/05 ,  G01N21/9501 ,  G01N15/0211 ,  G01F1/663 ,  G01N2021/054 ,  G01N2015/1075

Abstract: A process tube device can detect the presence of any external materials that may reside within a fluid flowing in the tube. The process tube device detects the external materials in-situ which obviates the need for a separate inspection device to inspect the surface of a wafer after applying fluid on the surface of the wafer. The process tube device utilizes at least two methods of detecting the presence of external materials. The first is the direct measurement method in which a light detecting sensor is used. The second is the indirect measurement method in which a sensor utilizing the principles of Doppler shift is used. Here, contrary to the first method that at least partially used reflected or refracted light, the second method uses a Doppler shift sensor to detect the presence of the external material by measuring the velocity of the fluid flowing in the tube.

公开(公告)号：US20230420520A1

公开(公告)日：2023-12-28

申请号：US18150524

申请日：2023-01-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han Chuang ,  Zhi-Chang Lin ,  Shih-Cheng Chen ,  Jung-Hung Chang ,  Chien Ning Yao ,  Kai-Lin Chuang ,  Kuo-Cheng Chiang ,  Chih-Hao Wang

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L21/02532 ,  H01L21/02639 ,  H01L29/775

Abstract: In an embodiment, a device includes: first nanostructures; a first undoped semiconductor layer contacting a first dummy region of the first nanostructures; a first spacer on the first undoped semiconductor layer; a first source/drain region on the first spacer, the first source/drain region contacting a first channel region of the first nanostructures; and a first gate structure wrapped around the first channel region and the first dummy region of the first nanostructures.

公开(公告)号：US20230178600A1

公开(公告)日：2023-06-08

申请号：US17663463

申请日：2022-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han Chuang ,  Zhi-Chang Lin ,  Shih-Cheng Chen ,  Jung-Hung Chang ,  Chien Ning Yao ,  Kai-Lin Chuang ,  Kuo-Cheng Chiang ,  Chih-Hao Wang

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/0665 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78696

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure includes a first bottom layer formed adjacent to the first nanostructures, and a first insulating layer formed over the first bottom layer. The semiconductor device structure includes a first source/drain (S/D) structure formed over the first insulating layer, and the first insulating layer is in direct contact with one of the first nanostructures.

公开(公告)号：US11107671B2

公开(公告)日：2021-08-31

申请号：US16391098

申请日：2019-04-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chih Hsu ,  Kai-Lin Chuang ,  Yuan-Chi Chien ,  Jeng-Huei Yang ,  Jun-Xiu Liu

IPC: H01L21/02 ,  B08B17/00 ,  H01L21/67 ,  B08B3/04 ,  B08B13/00 ,  H01L21/306 ,  H01L21/687

Abstract: A method includes disposing a semiconductor substrate over a chuck. The chuck has a plurality of holes therein. The semiconductor substrate has a first surface facing the chuck and a second surface opposite thereto. A liquid layer is formed flowing over a top surface of the chuck by supplying liquid to the top surface of the chuck through the holes of the chuck. The semiconductor substrate is moved toward the chuck such that the first surface of the semiconductor substrate is in contact with the liquid layer and the liquid layer flows between the first surface of the semiconductor substrate and the top surface of the chuck.

公开(公告)号：US10269557B2

公开(公告)日：2019-04-23

申请号：US14918243

申请日：2015-10-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chih Hsu ,  Kai-Lin Chuang ,  Yuan-Chi Chien ,  Jeng-Huei Yang ,  Jun-Xiu Liu

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  H01L21/687 ,  B08B3/04 ,  B08B13/00 ,  B08B17/00

Abstract: An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.