公开(公告)号：US11923240B2

公开(公告)日：2024-03-05

申请号：US17874300

申请日：2022-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Da-Yuan Lee

IPC分类号： H01L21/768 ,  H01L21/027 ,  H01L29/66

CPC分类号： H01L21/76802 ,  H01L21/0274 ,  H01L29/66545

摘要： A method of forming a semiconductor device includes forming a first transistor and a second transistor on a substrate. The first transistor includes a first gate structure, and the second transistor includes a second gate structure. The first gate structure includes a first high-k layer, a first work function layer, an overlying work function layer, and a first capping layer sequentially formed on the substrate. The second gate structure comprising a second high-k layer, a second work function layer, and a second capping layer sequentially formed on the substrate. The first capping layer and the second capping layer comprise materials having higher resistant to oxygen or fluorine than materials of the second work function layer and the overlying work function layer.

公开(公告)号：US20230230977A1

公开(公告)日：2023-07-20

申请号：US18190908

申请日：2023-03-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Weng Chang ,  Chi-On Chui

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L21/82345

摘要： A semiconductor device including a substrate, a first transistor and a second transistor is provided. The first transistor includes a first gate structure over the first semiconductor fin. The first gate structure includes a first high-k layer and a first work function layer sequentially disposed on the substrate, a material of the first work function layer may include metal carbide and aluminum, and a content of aluminum in the first work function layer is less than 10% atm. The second transistor includes a second gate structure. The second gate structure includes a second high-k layer and a second work function layer sequentially disposed on the substrate. A work function of the first work function layer is greater than a work function of the second work function layer.

公开(公告)号：US11688797B2

公开(公告)日：2023-06-27

申请号：US17140308

申请日：2021-01-04

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Chi On Chui

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234

CPC分类号： H01L29/6681 ,  H01L21/823431 ,  H01L29/0669 ,  H01L29/66545 ,  H01L29/7851

摘要： A method of forming a semiconductor device including forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate, the first semiconductor layers and the second semiconductor layers having different compositions, forming a dummy gate structure across the fin structure, forming gate spacers on opposite sidewalls of the dummy gate structure, respectively, removing the dummy gate structure to form a gate trench between the gate spacers, etching the first semiconductor layers in the gate trench, such that the second semiconductor layers are suspended in the gate trench to serve as nanosheets, forming a work function metal layer surrounding each of the nanosheets, and depositing a fill metal layer over the work function metal layer without using a fluorine-containing precursor.

公开(公告)号：US10756087B2

公开(公告)日：2020-08-25

申请号：US16010366

申请日：2018-06-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chung-Chiang Wu ,  Shih-Hang Chiu ,  Chih-Chang Hung ,  I-Wei Yang ,  Shu-Yuan Ku ,  Cheng-Lung Hung ,  Da-Yuan Lee ,  Ching-Hwanq Su

IPC分类号： H01L27/088 ,  H01L29/06 ,  H01L27/11 ,  H01L21/8234 ,  H01L29/66

摘要： A method includes forming a first semiconductor fin in a substrate, forming a metal gate structure over the first semiconductor fin, removing a portion of the metal gate structure to form a first recess in the metal gate structure that is laterally separated from the first semiconductor fin by a first distance, wherein the first distance is determined according to a first desired threshold voltage associated with the first semiconductor fin, and filling the recess with a dielectric material.

公开(公告)号：US10164045B2

公开(公告)日：2018-12-25

申请号：US14103550

申请日：2013-12-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yong-Tian Hou ,  Yuan-Shun Chao ,  Chien-Hao Chen ,  Cheng-Lung Hung

IPC分类号： H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28

摘要： A semiconductor device includes a gate dielectric layer and a gate electrode formed on the gate dielectric layer. The gate electrode includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer includes an oxygen-gettering composition. The second metal layer includes oxygen. The third metal layer includes an interface with a polysilicon layer.

公开(公告)号：US20240234534A1

公开(公告)日：2024-07-11

申请号：US18597952

申请日：2024-03-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Weng Chang ,  Chi-On Chui

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/28568 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/0669 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/517

摘要： Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate strip disposed over the substrate. The gate strip includes a high-k layer disposed over the substrate, an N-type work function metal layer disposed over the high-k layer, and a barrier layer disposed over the N-type work function metal layer. The barrier layer includes at least one first film containing TiAlN, TaAlN or AlN.

公开(公告)号：US20230028460A1

公开(公告)日：2023-01-26

申请号：US17725722

申请日：2022-04-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Cheng Wang ,  Shih-Hang Chiu ,  Kuan-Ting Liu ,  Cheng-Lung Hung ,  Chi On Chui

IPC分类号： H01L23/535 ,  H01L27/088 ,  H01L23/532 ,  H01L21/768 ,  H01L21/8234

摘要： A semiconductor device includes an active region. A metal gate electrode is disposed over the active region. A conductive layer is disposed over the metal gate electrode. A silicon-containing layer is disposed over a first portion of the conductive layer. A dielectric layer is disposed over a second portion of the conductive layer. A gate via vertically extends through the silicon-containing layer. The gate via is disposed over, and electrically coupled to, the metal gate electrode.

公开(公告)号：US11257921B2

公开(公告)日：2022-02-22

申请号：US16388200

申请日：2019-04-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Yi Lee ,  Hsuan-Yu Tung ,  Chin-You Hsu ,  Cheng-Lung Hung

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06

摘要： Semiconductor devices and methods of manufacturing semiconductor devices are provided. In embodiments a passivation process is utilized in order to reduce dangling bonds and defects within work function layers within a gate stack. The passivation process introduces a passivating element which will react with the dangling bonds to passivate the dangling bonds. Additionally, in some embodiments the passivating elements will trap other elements and reduce or prevent them from diffusing into other portions of the structure.

公开(公告)号：US10998414B2

公开(公告)日：2021-05-04

申请号：US15619103

申请日：2017-06-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hung-Chin Chung ,  Shiang-Rung Tsai ,  Hsien-Ming Lee ,  Cheng-Lung Hung ,  Hsiao-Kuan Wei

IPC分类号： H01L29/49 ,  H01L29/40 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

摘要： Methods for forming semiconductor structures are disclosed herein. An exemplary method includes forming a gate structure having a dummy gate stack over a substrate, performing a gate replacement process, such that the dummy gate stack is replaced with a metal gate stack, and forming a non-silane based oxide capping layer over the gate structure. The gate replacement process includes removing a portion of the dummy gate stack from the gate structure, thereby forming a gate trench. A work function layer is formed in the gate trench, a blocking layer is formed in the gate trench over the work function layer, and a metal layer (including, for example, aluminum) is formed in the gate trench over the blocking layer. The blocking layer includes titanium and nitrogen with a titanium to nitrogen ratio that is greater than one. In some implementations, the work function layer is formed over a dielectric layer.

公开(公告)号：US11955528B2

公开(公告)日：2024-04-09

申请号：US17963196

申请日：2022-10-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hsin-Yi Lee ,  Cheng-Lung Hung ,  Weng Chang ,  Chi-On Chui

IPC分类号： H01L29/49 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/28568 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0924 ,  H01L29/0669 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/517

摘要： Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate strip disposed over the substrate. The gate strip includes a high-k layer disposed over the substrate, an N-type work function metal layer disposed over the high-k layer, and a barrier layer disposed over the N-type work function metal layer. The barrier layer includes at least one first film containing TiAlN, TaAlN or AlN.