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公开(公告)号：US20140170319A1
公开(公告)日：2014-06-19
申请号：US13716052
申请日：2012-12-14
发明人： Wei-Che Hsieh , Brian Wang , Tze-Liang Lee , Yi-Hung Lin , Hao-Ming Lien , Shiang-Rung Tsai , Tai-Chun Huang
IPC分类号： B05B1/14
CPC分类号： C23C16/45578 , C23C16/45504 , C23C16/45546 , C23C16/4584 , C23C16/52 , C23C16/54 , H01L21/00
摘要： An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.
摘要翻译： 提供了分别在一叠晶片上形成薄膜的注射器。 喷射器包括多个孔结构。 每个相邻的两个晶片之间具有晶片间隔，并且每个晶片具有工作表面。 孔结构分别对应于相应的晶片间隔。 工作表面和相应的孔结构之间具有平行的距离。 平行距离大于晶片间距的一半。 还提供了晶片处理装置和分别在晶片叠层上形成薄膜的方法。
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公开(公告)号：US10316411B2
公开(公告)日：2019-06-11
申请号：US14665346
申请日：2015-03-23
发明人： Wei-Che Hsieh , Brian Wang , Tze-Liang Lee , Yi-Hung Lin , Hao-Ming Lien , Shiang-Rung Tsai , Tai-Chun Huang
IPC分类号： C23C16/455 , H01L21/00 , C23C16/458 , C23C16/54 , C23C16/52
摘要： An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.
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公开(公告)号：US09401302B2
公开(公告)日：2016-07-26
申请号：US14665934
申请日：2015-03-23
发明人： Chun Hsiung Tsai , Shiang-Rung Tsai
IPC分类号： H01L21/762 , H01L29/66 , H01L21/324
CPC分类号： H01L21/76224 , H01L21/324 , H01L29/66795
摘要： An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, a second wet anneal, and a first dry anneal. In an embodiment, the first annealing process is followed by a chemical mechanical planarization (CMP) process, an etching process, and a second annealing process for the isolation region.
摘要翻译： 在翅片场效应晶体管（FinFET）中控制翅片弯曲的实施方式包括在衬底上形成隔离区域，执行第一退火工艺，第一退火工艺包括第一湿法退火，第二湿法退火和第一 干法退火 在一个实施例中，第一退火工艺之后是用于隔离区域的化学机械平面化（CMP）工艺，蚀刻工艺和第二退火工艺。
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公开(公告)号：US20170278941A1
公开(公告)日：2017-09-28
申请号：US15619103
申请日：2017-06-09
CPC分类号： H01L29/4966 , H01L21/28079 , H01L21/28088 , H01L29/401 , H01L29/66545 , H01L29/78
摘要： Methods for forming semiconductor structures are disclosed herein. An exemplary method includes forming a gate structure having a dummy gate stack over a substrate, performing a gate replacement process, such that the dummy gate stack is replaced with a metal gate stack, and forming a non-silane based oxide capping layer over the gate structure. The gate replacement process includes removing a portion of the dummy gate stack from the gate structure, thereby forming a gate trench. A work function layer is formed in the gate trench, a blocking layer is formed in the gate trench over the work function layer, and a metal layer (including, for example, aluminum) is formed in the gate trench over the blocking layer. The blocking layer includes titanium and nitrogen with a titanium to nitrogen ratio that is greater than one. In some implementations, the work function layer is formed over a dielectric layer.
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公开(公告)号：US09679984B2
公开(公告)日：2017-06-13
申请号：US13871555
申请日：2013-04-26
CPC分类号： H01L29/4966 , H01L21/28079 , H01L21/28088 , H01L29/401 , H01L29/66545 , H01L29/78
摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate and a gate stack disposed on the semiconductor substrate. The gate stack includes a high-k dielectric material layer, a titanium-rich TiN layer over the high-k dielectric layer, and a metal layer disposed over the titanium-rich TiN layer. The metal layer includes aluminum.
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公开(公告)号：US20150004772A1
公开(公告)日：2015-01-01
申请号：US13930944
申请日：2013-06-28
发明人： Chun Hsiung Tsai , Shiang-Rung Tsai
IPC分类号： H01L21/762 , H01L29/66
CPC分类号： H01L21/76224 , H01L21/324 , H01L29/66795
摘要： An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, the first wet anneal removing impurities from the isolation region; a second wet anneal, the second wet anneal forming silanol in the isolation region; and a first dry anneal, the first dry anneal dehydrating the isolation region. In an embodiment, the first annealing process is followed by a chemical mechanical planarization (CMP) process, an etching process, and a second annealing process for the isolation region.
摘要翻译： 在鳍状场效应晶体管（FinFET）中控制翅片弯曲的实施方式包括在衬底上形成隔离区域，执行第一退火工艺，第一退火工艺包括第一湿法退火，第一湿法退火从第 隔离区; 第二次湿法退火，在隔离区域形成硅烷醇的第二次湿法退火; 和第一次干燥退火，第一次干燥退火将隔离区域脱水。 在一个实施例中，第一退火工艺之后是用于隔离区域的化学机械平面化（CMP）工艺，蚀刻工艺和第二退火工艺。
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公开(公告)号：US20140124875A1
公开(公告)日：2014-05-08
申请号：US13871555
申请日：2013-04-26
CPC分类号： H01L29/4966 , H01L21/28079 , H01L21/28088 , H01L29/401 , H01L29/66545 , H01L29/78
摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate and a gate stack disposed on the semiconductor substrate. The gate stack includes a high-k dielectric material layer, a titanium-rich TiN layer over the high-k dielectric layer, and a metal layer disposed over the titanium-rich TiN layer. The metal layer includes aluminum.
摘要翻译： 本公开提供了一种半导体结构。 半导体结构包括设置在半导体衬底上的半导体衬底和栅极堆叠。 栅极堆叠包括高k电介质材料层，高k电介质层上的富钛TiN层和设置在富钛TiN层上的金属层。 金属层包括铝。
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公开(公告)号：US10998414B2
公开(公告)日：2021-05-04
申请号：US15619103
申请日：2017-06-09
摘要： Methods for forming semiconductor structures are disclosed herein. An exemplary method includes forming a gate structure having a dummy gate stack over a substrate, performing a gate replacement process, such that the dummy gate stack is replaced with a metal gate stack, and forming a non-silane based oxide capping layer over the gate structure. The gate replacement process includes removing a portion of the dummy gate stack from the gate structure, thereby forming a gate trench. A work function layer is formed in the gate trench, a blocking layer is formed in the gate trench over the work function layer, and a metal layer (including, for example, aluminum) is formed in the gate trench over the blocking layer. The blocking layer includes titanium and nitrogen with a titanium to nitrogen ratio that is greater than one. In some implementations, the work function layer is formed over a dielectric layer.
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公开(公告)号：US20150194335A1
公开(公告)日：2015-07-09
申请号：US14665934
申请日：2015-03-23
发明人： Chun Hsiung Tsai , Shiang-Rung Tsai
IPC分类号： H01L21/762 , H01L29/66 , H01L21/324
CPC分类号： H01L21/76224 , H01L21/324 , H01L29/66795
摘要： An embodiment method of controlling fin bending in a fin field-effect transistor (FinFET) includes forming an isolation region over a substrate, performing a first annealing process, the first annealing process including a first wet anneal, a second wet anneal, and a first dry anneal. In an embodiment, the first annealing process is followed by a chemical mechanical planarization (CMP) process, an etching process, and a second annealing process for the isolation region.
摘要翻译： 在翅片场效应晶体管（FinFET）中控制翅片弯曲的实施方式包括在衬底上形成隔离区域，执行第一退火工艺，第一退火工艺包括第一湿法退火，第二湿法退火和第一 干法退火 在一个实施例中，第一退火工艺之后是用于隔离区域的化学机械平面化（CMP）工艺，蚀刻工艺和第二退火工艺。
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公开(公告)号：US09017763B2
公开(公告)日：2015-04-28
申请号：US13716052
申请日：2012-12-14
发明人： Wei-Che Hsieh , Brian Wang , Tze-Liang Lee , Yi-Hung Lin , Hao-Ming Lien , Shiang-Rung Tsai , Tai-Chun Huang
CPC分类号： C23C16/45578 , C23C16/45504 , C23C16/45546 , C23C16/4584 , C23C16/52 , C23C16/54 , H01L21/00
摘要： An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.
摘要翻译： 提供了分别在一叠晶片上形成薄膜的注射器。 喷射器包括多个孔结构。 每个相邻的两个晶片之间具有晶片间隔，并且每个晶片具有工作表面。 孔结构分别对应于相应的晶片间隔。 工作表面和相应的孔结构之间具有平行的距离。 平行距离大于晶片间距的一半。 还提供了晶片处理装置和分别在晶片叠层上形成薄膜的方法。
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