公开(公告)号：US20210375772A1

公开(公告)日：2021-12-02

申请号：US17400731

申请日：2021-08-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chin-Chuan CHANG ,  Szu-Wei LU

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/683 ,  H01L25/00 ,  H01L25/065

摘要： A method for forming a package structure is provided. The method includes forming a first molding compound layer surrounding a first interposer. The method also includes forming a first redistribution structure over a first side of the first interposer and the first molding compound layer. The method also includes bonding a first semiconductor die and a second semiconductor die to the first redistribution structure through a plurality of first connectors. The method also includes bonding a surface-mount device (SMD) to the first redistribution structure through a second connector. The method also includes forming a second redistribution structure over a second side of the first interposer opposite the first side of the first interposer. A top surface of the surface-mount device (SMD) is lower than top surfaces of the first semiconductor die and the second semiconductor die.

公开(公告)号：US20220157743A1

公开(公告)日：2022-05-19

申请号：US17587290

申请日：2022-01-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yi-Chao MAO ,  Chin-Chuan CHANG ,  Szu-Wei LU

IPC分类号： H01L23/00 ,  H01L21/768

摘要： A package structure is provided. The package structure includes a lower semiconductor die and a first protective layer surrounding the lower semiconductor die. The package structure also includes a dielectric layer partially covering the first protective layer and the lower semiconductor die and an upper semiconductor die over the lower semiconductor die and the first protective layer. The upper semiconductor die is bonded with the lower semiconductor die through a connector. The package structure further includes an insulating film surrounding the connector and a second protective layer surrounding the upper semiconductor die. A portion of the second protective layer is between the insulating film and the dielectric layer.

公开(公告)号：US20150017764A1

公开(公告)日：2015-01-15

申请号：US14503932

申请日：2014-10-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Jing-Cheng LIN ,  Chin-Chuan CHANG ,  Jui-Pin HUNG

IPC分类号： H01L23/00

CPC分类号： H01L23/562 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/24 ,  H01L24/27 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/96 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82 ,  H01L2224/82005 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/06582 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00011

摘要： A method of forming a semiconductor package includes forming an interconnecting structure on an adhesive layer, wherein the adhesive layer is on a carrier. The method further includes placing a semiconductor die on a surface of the interconnecting structure. The method further includes placing a package structure on the surface of the interconnecting structure, wherein the semiconductor die fits in a space between the interconnecting structure and the package structure. The method further includes performing a reflow to bond the package structure to the interconnecting structure.

摘要翻译： 形成半导体封装的方法包括在粘合剂层上形成互连结构，其中粘合剂层在载体上。 该方法还包括将半导体管芯放置在互连结构的表面上。 该方法还包括将封装结构放置在互连结构的表面上，其中半导体管芯装配在互连结构和封装结构之间的空间中。 该方法还包括执行回流以将封装结构连接到互连结构。