公开(公告)号：US20240355742A1

公开(公告)日：2024-10-24

申请号：US18760471

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Wei Chang ,  Chien-Shun Liao ,  Sung-Li Wang ,  Shuen-Shin Liang ,  Shu-Lan Chang ,  Yi-Ying Liu ,  Chia-Hung Chu ,  Hsu-Kai Chang

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC分类号： H01L23/53266 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238

摘要： The present disclosure describes a method for the fabrication of ruthenium conductive structures over cobalt conductive structures. In some embodiments, the method includes forming a first opening in a dielectric layer to expose a first cobalt contact and filling the first opening with ruthenium metal to form a ruthenium contact on the first cobalt contact. The method also includes forming a second opening in the dielectric layer to expose a second cobalt contact and a gate structure and filling the second opening with tungsten to form a tungsten contact on the second cobalt contact and the gate structure. Further, the method includes forming a copper conductive structure on the ruthenium contact and the tungsten contact, where the copper from the copper conductive structure is in contact with the ruthenium metal from the ruthenium contact.

公开(公告)号：US20240105500A1

公开(公告)日：2024-03-28

申请号：US18106680

申请日：2023-02-07

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kenichi Sano ,  Chin-Hsiang Lin ,  Hsu-Kai Chang ,  Pinyen Lin

IPC分类号： H01L21/762 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/088

CPC分类号： H01L21/76229 ,  H01L21/76883 ,  H01L21/823878 ,  H01L27/088

摘要： The present disclosure provides a method for repairing a seam within a conformally deposited material. One or more seam repairing precursor sources may be delivered to seams or voids using a carrier at a super critical fluid phase. At the super critical fluid phase, the carrier has liquid like density and gas like high diffusion capability, therefore capable of delivering the repairing precursor sources to seams or voids under surfaces of a structure. In some embodiments, carbon dioxide or argon may be used as a carrier.

公开(公告)号：US11817384B2

公开(公告)日：2023-11-14

申请号：US17567525

申请日：2022-01-03

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Shuen-Shin Liang ,  Ken-Yu Chang ,  Hung-Yi Huang ,  Chien Chang ,  Chi-Hung Chuang ,  Kai-Yi Chu ,  Chun-I Tsai ,  Chun-Hsien Huang ,  Chih-Wei Chang ,  Hsu-Kai Chang ,  Chia-Hung Chu ,  Keng-Chu Lin ,  Sung-Li Wang

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76805 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5228

摘要： The present disclosure provides an interconnect structure and a method for forming an interconnect structure. The method for forming an interconnect structure includes forming a bottom metal line in a first interlayer dielectric layer, forming a second interlayer dielectric layer over the bottom metal line, exposing a top surface of the bottom metal line, increasing a total surface area of the exposed top surface of the bottom metal line, forming a conductive via over the bottom metal line, and forming a top metal line over the conductive via.

公开(公告)号：US11217524B1

公开(公告)日：2022-01-04

申请号：US16900622

申请日：2020-06-12

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Shuen-Shin Liang ,  Ken-Yu Chang ,  Hung-Yi Huang ,  Chien Chang ,  Chi-Hung Chuang ,  Kai-Yi Chu ,  Chun-I Tsai ,  Chun-Hsien Huang ,  Chih-Wei Chang ,  Hsu-Kai Chang ,  Chia-Hung Chu ,  Keng-Chu Lin ,  Sung-Li Wang

IPC分类号： H01L23/522 ,  H01L21/768

摘要： The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

公开(公告)号：US20240339497A1

公开(公告)日：2024-10-10

申请号：US18747151

申请日：2024-06-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Wei Chang ,  Shuen-Shin Liang ,  Sung-Li Wang ,  Hsu-Kai Chang ,  Chia-Hung Chu ,  Chien-Shun Liao ,  Yi-Ying Liu

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/0665 ,  H01L29/1033 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66742

摘要： A semiconductor device with dual side source/drain (S/D) contact structures and methods of fabricating the same are disclosed. The semiconductor device includes first and second S/D regions, a nanostructured channel region disposed between the first and second S/D regions, a gate structure surrounding the nanostructured channel region, first and second contact structures disposed on first surfaces of the first and second S/D regions, a third contact structure disposed on a second surface of the first S/D region, and an etch stop layer disposed on a second surface of the second S/D region. The third contact structure includes a metal silicide layer, a silicide nitride layer disposed on the metal silicide layer, and a conductive layer disposed on the silicide nitride layer.

公开(公告)号：US20240274687A1

公开(公告)日：2024-08-15

申请号：US18647521

申请日：2024-04-26

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Hung CHU ,  Kan-Ju Lin ,  Hsu-Kai Chang ,  Chien Chang ,  Tzu-Pei Chen ,  Hung-Yi Huang ,  Sung-Li Wang ,  Shuen-Shin Liang

IPC分类号： H01L29/45 ,  H01L21/311 ,  H01L21/8234 ,  H01L23/532 ,  H01L23/535 ,  H01L29/40 ,  H01L29/417

CPC分类号： H01L29/45 ,  H01L21/31116 ,  H01L21/823475 ,  H01L23/53242 ,  H01L23/535 ,  H01L29/401 ,  H01L29/41791

摘要： The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a layer of dielectric material over the gate structure, a source/drain (S/D) contact layer formed through and adjacent to the gate structure, and a trench conductor layer over and in contact with the S/D contact layer. The S/D contact layer can include a layer of platinum-group metallic material and a silicide layer formed between the substrate and the layer of platinum-group metallic material. A top width of a top portion of the layer of platinum-group metallic material can be greater than or substantially equal to a bottom width of a bottom portion of the layer of platinum-group metallic material.