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公开(公告)号：US20160315065A1
公开(公告)日：2016-10-27
申请号：US15203045
申请日：2016-07-06
发明人： CHEN-CHUN CHEN , CHIU-JUNG CHEN , FU-TSUN TSAI , SHIU-KO JANGJIAN , CHI-CHERNG JENG , HSIN-CHI CHEN
IPC分类号： H01L23/00 , H01L27/146 , H01L21/027 , H01L21/306 , H01L21/268
CPC分类号： H01L24/83 , H01L21/02019 , H01L21/0273 , H01L21/268 , H01L21/30604 , H01L21/76256 , H01L27/1464 , H01L27/14687 , H01L27/1469 , H01L2224/29101 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/2919 , H01L2224/83201 , H01L2224/838 , H01L2224/83805 , H01L2224/8385 , H01L2224/83895 , H01L2224/83896 , H01L2924/07025
摘要： A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.
摘要翻译： 制造半导体结构的方法包括提供包括表面的第一晶片，去除表面上的第一晶片的一些部分以形成在第一晶片的表面的至少一部分上延伸的多个凹槽，从而提供第二晶片 并且将第二晶片设置在第一晶片的表面上。
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公开(公告)号：US20150228720A1
公开(公告)日：2015-08-13
申请号：US14178814
申请日：2014-02-12
发明人： CHEN-CHUN CHEN , CHIU-JUNG CHEN , FU-TSUN TSAI , SHIU-KO JANGJIAN , CHI-CHERNG JENG , HSIN-CHI CHEN
CPC分类号： H01L24/83 , H01L21/02019 , H01L21/0273 , H01L21/268 , H01L21/30604 , H01L21/76256 , H01L27/1464 , H01L27/14687 , H01L27/1469 , H01L2224/29101 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/2919 , H01L2224/83201 , H01L2224/838 , H01L2224/83805 , H01L2224/8385 , H01L2224/83895 , H01L2224/83896 , H01L2924/07025
摘要： A semiconductor structure includes a wafer including a first surface and a periphery, a plurality of protrusions protruded from the first surface and a plurality of recesses spaced from each other by the plurality of protrusions, and each of the plurality of recesses is extended from the periphery of the wafer and is elongated across the first surface of the wafer.
摘要翻译： 半导体结构包括：第一表面和周边的晶片，从第一表面突出的多个突起和由多个突起彼此间隔开的多个凹部，并且多个凹部中的每一个从周边延伸 并且延伸穿过晶片的第一表面。
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