公开(公告)号：US20230382716A1

公开(公告)日：2023-11-30

申请号：US18446741

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun Yin Tsai ,  Wen Cheng Kuo

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81C1/00246 ,  B81B2201/0257 ,  B81B2207/015 ,  B81B2203/0127 ,  B81B2203/0109 ,  B81B2207/09 ,  B81B2201/0235

Abstract: Various embodiments of the present disclosure are directed towards an electronic device that comprises a semiconductor substrate having a first surface opposite a second surface. The semiconductor substrate at least partially defines a cavity. A first microelectromechanical systems (MEMS) device is disposed along the first surface of the semiconductor substrate. The first MEMS device comprises a first backplate and a diaphragm vertically separated from the first backplate. A second MEMS device is disposed along the first surface of the semiconductor substrate. The second MEMS device comprises spring structures and a moveable element. The spring structures are configured to suspend the moveable element in the cavity. A segment of the semiconductor substrate continuously laterally extends from under a sidewall of the first MEMS device to under a sidewall of the second MEMS device.

公开(公告)号：US11750980B2

公开(公告)日：2023-09-05

申请号：US17815249

申请日：2022-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Wen Cheng ,  Chun Yin Tsai ,  Chia-Hua Chu

IPC: H04R17/02 ,  B81B3/00 ,  B81C1/00

CPC classification number: H04R17/02 ,  B81B3/0021 ,  B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  H04R2201/003

Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.

公开(公告)号：US11581476B2

公开(公告)日：2023-02-14

申请号：US16818881

申请日：2020-03-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Wen Cheng ,  Chun Yin Tsai ,  Chia-Hua Chu

IPC: H01L41/08 ,  H01L41/047 ,  H01L41/293 ,  H01L41/083

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a first piezoelectric layer, and a first dummy layer. The first piezoelectric layer is over the substrate, and the first piezoelectric layer has a first top surface. The first dummy layer is over the first piezoelectric layer, and the first dummy layer has a second top surface. And an average roughness of the first top surface is greater than an average roughness of the second top surface. A method for manufacturing the semiconductor structure is also provided.

公开(公告)号：US11418887B2

公开(公告)日：2022-08-16

申请号：US16904560

申请日：2020-06-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Wen Cheng ,  Chun Yin Tsai ,  Chia-Hua Chu

IPC: H04R17/02 ,  B81B3/00 ,  B81C1/00

Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate and a membrane over the substrate. The membrane includes a piezoelectric material configured to generate charges in response to an acoustic wave. The membrane includes a via pattern having first lines that partition the membrane into slices such that the slices are separated from each other at a first region near an edge of the membrane and connected to each other at a second region.

公开(公告)号：US12219320B2

公开(公告)日：2025-02-04

申请号：US18356246

申请日：2023-07-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Chun-Wen Cheng ,  Chun Yin Tsai ,  Chia-Hua Chu

IPC: H04R17/02 ,  B81B3/00 ,  B81C1/00

Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern includes: first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region; and second lines extending from the anchored region of the membrane toward the central region of the membrane, each of the first lines or each of the second lines including non-straight lines.