-
1.发明授权公开(公告)号：US11417566B2
公开(公告)日：2022-08-16
申请号：US16382641
申请日：2019-04-12
Inventor： Chun-Hao Kung , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/768 , H01L29/66 , H01L21/02
Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.
-
公开(公告)号：US10953514B1
公开(公告)日：2021-03-23
申请号：US16572895
申请日：2019-09-17
Inventor： Shang-Yu Wang , Chun-Hao Kung , Ching-Hsiang Tsai , Kei-Wei Chen , Hui-Chi Huang
IPC: B24B37/005 , H01L21/304 , B24B37/10 , H01L21/306 , B24B37/04
Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.
-
公开(公告)号：US20210016415A1
公开(公告)日：2021-01-21
申请号：US16516006
申请日：2019-07-18
Inventor： Chun-Hao Kung , Shang-Yu Wang , Ching-Hsiang Tsai , Hui-Chi Huang , Kei-Wei Chen
IPC: B24B37/10 , B24B37/04 , B24B37/32 , H01L21/321 , H01L21/3105
Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.
-
公开(公告)号：US20200043747A1
公开(公告)日：2020-02-06
申请号：US16207802
申请日：2018-12-03
Inventor： Yen-Ting Chen , Chun-Hao Kung , Tung-Kai Chen , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , C09K3/14 , B01F13/08 , B24B37/04 , B24B57/02
Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.
-
公开(公告)号：US12300508B2
公开(公告)日：2025-05-13
申请号：US17847290
申请日：2022-06-23
Inventor： Tung-Kai Chen , Ching-Hsiang Tsai , Kao-Feng Liao , Chih-Chieh Chang , Chun-Hao Kung , Fang-I Chih , Hsin-Ying Ho , Chia-Jung Hsu , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , H01L21/28 , H01L21/3105
Abstract: A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.
-
Patent Agency Ranking
公开(公告)号：US11056352B2
公开(公告)日：2021-07-06
申请号：US16207802
申请日：2018-12-03
Inventor： Yen-Ting Chen , Chun-Hao Kung , Tung-Kai Chen , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , C09K3/14 , B24B57/02 , B24B37/04 , B01F13/08
Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.
-
公开(公告)号：US11043396B2
公开(公告)日：2021-06-22
申请号：US16179307
申请日：2018-11-02
Inventor： Chun-Hao Kung , Tung-Kai Chen , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , H01L21/768 , C09G1/02 , C09G1/04 , H01L21/306
Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.
-
公开(公告)号：US10741381B2
公开(公告)日：2020-08-11
申请号：US15602260
申请日：2017-05-23
Inventor： Kaw-Wei Kuo , Chun-Hao Kung , Kuo-Feng Huang , Yi-Wei Chiu , Wei-Chun Chen
Abstract: A cleaning apparatus and a method of using the cleaning apparatus are provided. The method includes first moving a pencil pad into contact with a top surface of a wafer, wherein the pencil pad is connected to a pivot arm and second moving the pivot arm in a sweeping motion from a first zone to a second zone, the first zone being closer to a center of the top surface of the wafer than the second zone, wherein the sweeping motion is controlled by a controller, the pivot arm moves at a first speed in the first zone and the pivot arm moves at a second speed in the second zone, wherein the first speed is different from the second speed.
-
公开(公告)号：US11373879B2
公开(公告)日：2022-06-28
申请号：US17019234
申请日：2020-09-12
Inventor： Tung-Kai Chen , Ching-Hsiang Tsai , Kao-Feng Liao , Chih-Chieh Chang , Chun-Hao Kung , Fang-I Chih , Hsin-Ying Ho , Chia-Jung Hsu , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , H01L21/3105 , H01L21/28
Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
-
公开(公告)号：US20200043745A1
公开(公告)日：2020-02-06
申请号：US16179307
申请日：2018-11-02
Inventor： Chun-Hao Kung , Tung-Kai Chen , Chih-Chieh Chang , Kao-Feng Liao , Hui-Chi Huang , Kei-Wei Chen
IPC: H01L21/321 , C09G1/02 , H01L21/768
Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.016 seconds)
