公开(公告)号：US20180204828A1

公开(公告)日：2018-07-19

申请号：US15725766

申请日：2017-10-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： HSIANG-TAI LU ,  SHUO-MAO CHEN ,  MILL-JER WANG ,  FENG-CHENG HSU ,  CHAO-HSIANG YANG ,  SHIN-PUU JENG ,  CHENG-YI HONG ,  CHIH-HSIEN LIN ,  DAI-JANG CHEN ,  CHEN-HUA LIN

IPC分类号： H01L25/00 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/10 ,  H01L21/66 ,  H01L21/48 ,  H01L21/56

摘要： A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.

公开(公告)号：US20240088124A1

公开(公告)日：2024-03-14

申请号：US18518636

申请日：2023-11-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： HSIANG-TAI LU ,  SHUO-MAO CHEN ,  MILL-JER WANG ,  FENG-CHENG HSU ,  CHAO-HSIANG YANG ,  SHIN-PUU JENG ,  CHENG-YI HONG ,  CHIH-HSIEN LIN ,  DAI-JANG CHEN ,  CHEN-HUA LIN

IPC分类号： H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66 ,  H01L23/00 ,  H01L23/31 ,  H01L23/538 ,  H01L25/10

CPC分类号： H01L25/50 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/565 ,  H01L22/20 ,  H01L22/32 ,  H01L23/3135 ,  H01L23/3185 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/20 ,  H01L25/105 ,  H01L21/4857 ,  H01L21/563 ,  H01L22/14 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L2224/214 ,  H01L2225/1035 ,  H01L2225/1058

摘要： A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

公开(公告)号：US20220271024A1

公开(公告)日：2022-08-25

申请号：US17743455

申请日：2022-05-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： HSIANG-TAI LU ,  SHUO-MAO CHEN ,  MILL-JER WANG ,  FENG-CHENG HSU ,  CHAO-HSIANG YANG ,  SHIN-PUU JENG ,  CHENG-YI HONG ,  CHIH-HSIEN LIN ,  DAI-JANG CHEN ,  CHEN-HUA LIN

IPC分类号： H01L25/00 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L21/66

摘要： A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.