公开(公告)号：US20160079002A1

公开(公告)日：2016-03-17

申请号：US14833614

申请日：2015-08-24

Applicant: TDK CORPORATION

Inventor： Saori TAKEDA ,  Masahito FURUKAWA ,  Masanori KOSUDA ,  Yuji SEZAI

IPC: H01G4/10 ,  H01G4/33

CPC classification number: H01G4/10 ,  H01G4/1227 ,  H01G4/20 ,  H01G4/33

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001≦x≦0.400, 0.001≦y≦0.400, and 0.900≦z

Abstract translation: 电介质膜含有由通式（Ba1-xCax）z（Ti1-yZry）O3表示的电介质组合物，其中0.001和nlE; x和nlE; 0.400,0.001和n1E; y＆n1E; 0.400和0.900≤n1E; z <0.995 。 在电介质组合物的X射线衍射图中，电介质组合物的（001）面衍射峰位置2和钛之间的关系为0.00°＆lt; lE; 2＆het; c-2＆t; t <0.20° 通式和（100）平面衍射峰位置2和由通式表示的立方结构的c。

公开(公告)号：US20240248156A1

公开(公告)日：2024-07-25

申请号：US18566578

申请日：2022-05-31

Applicant: TDK Corporation ,  National University Corporation YOKOHAMA National University

Inventor： Tamon KASAJIMA ,  Shuichi OKAWA ,  Masanori KOSUDA ,  Yasushi TAKEMURA ,  Bagus Trisnanto Suko

IPC: G01R33/06 ,  G01R33/12

CPC classification number: G01R33/06 ,  G01R33/1276

Abstract: A magnetic field measurement device includes: an excitation coil that applies an excitation AC magnetic field to an object to be measured including a magnetic material to make a magnetization change of the magnetic material exhibit linear response; a detection coil that detects a primary detection magnetic field caused due to the magnetization change of the magnetic material to generate a primary detection signal; a magnetic field generation coil that generates a secondary detection magnetic field based on the primary detection signal; and a magnetic sensor that detects the secondary detection magnetic field to generate a secondary detection signal including a non-sine wave component. With this configuration, it is possible to obtain the secondary detection signal including a non-sine wave component without making the magnetization change of the magnetic material exhibit nonlinear response, allowing reduction in the current value and frequency of a current flowing in the excitation coil.

公开(公告)号：US20160329152A1

公开(公告)日：2016-11-10

申请号：US15134799

申请日：2016-04-21

Applicant: TDK Corporation

Inventor： Saori TAKEDA ,  Masahito FURUKAWA ,  Masanori KOSUDA ,  Shirou OOTSUKI ,  Yasunori HARADA

IPC: H01G4/33 ,  H01G4/12

CPC classification number: H01G4/33 ,  C04B35/4682 ,  C04B35/62218 ,  C04B35/6261 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3286 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/787 ,  C04B2235/788 ,  C04B2235/79 ,  C23C14/088 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/1245

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0

Abstract translation: 电介质元件技术领域本发明涉及电介质元件，例如包括电介质膜的薄膜电容器。 电介质膜含有由通式（Ba1-xCax）z（Ti1-yZry）O3表示的主要成分，其中0

公开(公告)号：US20160027587A1

公开(公告)日：2016-01-28

申请号：US14738405

申请日：2015-06-12

Applicant: TDK CORPORATION

Inventor： Masahito FURUKAWA ,  Masanori KOSUDA ,  Saori TAKEDA

IPC: H01G4/30 ,  H01G4/10

CPC classification number: H01G4/10 ,  C04B35/49 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/79 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/088 ,  C23C14/28 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/125 ,  C23C18/1254 ,  H01G4/1227

Abstract: The present invention provides a thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and also provides a large-capacity thin-film capacitor element using the thin-film dielectric.A BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant. Also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Abstract translation: 本发明提供一种具有比通常介电常数高的介电常数且不需要特殊的单晶衬底的薄膜电介质，并且还提供使用该薄膜电介质的大容量薄膜电容器元件。 交替地形成BaTiO 3系钙钛矿固溶体和KNbO 3系钙钛矿固溶体，形成界面处晶格常数连续变化的晶体结构梯度区域，由此发生晶格应变， 具有高介电常数的薄膜电介质。 此外，通过使用本发明的薄膜电介质可以制造大容量的薄膜电容器元件。