LAMINATED STRUCTURE AND SPIN MODULATION ELEMENT

    公开(公告)号:US20180351090A1

    公开(公告)日:2018-12-06

    申请号:US15994057

    申请日:2018-05-31

    CPC classification number: H01L43/08 H01F10/3268 H01L43/10

    Abstract: To provide a laminated structure and a spin modulation element capable of stably modulating spin polarizability of a ferromagnetic material by an electric field. A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a rhombohedral crystal structure formed on a surface side on the ferromagnetic layer side and a second region having a tetragonal crystal structure formed further inside than the first region.

    LIQUID CRYSTAL LENS
    4.
    发明申请
    LIQUID CRYSTAL LENS 审中-公开
    液晶镜头

    公开(公告)号:US20150370125A1

    公开(公告)日:2015-12-24

    申请号:US14731040

    申请日:2015-06-04

    Inventor: Shogo YONEMURA

    CPC classification number: G02F1/29 G02F2001/294

    Abstract: A liquid crystal lens of this invention is provided with (i) a first substrate having (a) a first electrode that has a hole and (b) a second electrode that is within the hole of the first electrode, and spaced from the first electrode; (ii) a second substrate having a third electrode; and (iii) a liquid crystal layer that is formed between an electrode formation surface of the first substrate and an electrode formation surface of the second substrate. In this liquid crystal lens, a functional film is arranged between the second substrate and the liquid crystal layer. At least part of the functional film has a region that has a continuous composition gradient in a film thickness direction.

    Abstract translation: 本发明的液晶透镜设置有(i)第一基板,其具有(a)具有孔的第一电极和(b)位于第一电极的孔内并与第一电极间隔开的第二电极 ; (ii)具有第三电极的第二基板; 和(iii)形成在第一基板的电极形成表面和第二基板的电极形成表面之间的液晶层。 在该液晶透镜中,功能膜配置在第二基板和液晶层之间。 功能膜的至少一部分具有在膜厚度方向上具有连续组成梯度的区域。

    MAGNETIC DOMAIN WALL MOVING ELEMENT AND MAGNETIC ARRAY

    公开(公告)号:US20240074325A1

    公开(公告)日:2024-02-29

    申请号:US17899131

    申请日:2022-08-30

    CPC classification number: H01L43/02 H01L27/222 H01L43/10 H01L43/12

    Abstract: A magnetic domain wall moving element includes a first ferromagnetic layer, non-magnetic layer, second ferromagnetic layer, first magnetization fixed part, second magnetization fixed part, first surface layer and second surface layer. The first and second ferromagnetic layer sandwich the non-magnetic layer, the second ferromagnetic layer has a region having a magnetic domain wall formed therein, the first magnetization fixed part contacts second ferromagnetic layer, the second magnetization fixed part contacts second ferromagnetic layer at a position different from that of the first magnetization fixed part, the first is thicker than the second magnetization fixed part, the first surface layer contacts the first magnetization fixed part's first surface, the second surface layer contacts the second magnetization fixed part's first surface, and a constituent atom of a portion of the first surface layer in contact with the first magnetization fixed part are different from a constituent atom of the second surface layer.

    MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC ARRAY

    公开(公告)号:US20220190233A1

    公开(公告)日:2022-06-16

    申请号:US17543314

    申请日:2021-12-06

    Abstract: A magnetic domain wall movement element includes: a laminate including a ferromagnetic layer, a non-magnetic layer, and a magnetic domain wall movement layer; a first conductive layer; and a first surface layer laminated above a substrate in order from the substrate, wherein the non-magnetic layer is sandwiched between the ferromagnetic layer and the magnetic domain wall movement layer, wherein the first conductive layer is connected to an upper surface of the magnetic domain wall movement layer, wherein the first surface layer contacts at least a part of an upper surface of the magnetic domain wall movement layer, and wherein the resistivity of the first surface layer is higher than the resistivity of the magnetic domain wall movement layer.

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