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公开(公告)号：US20220190234A1
公开(公告)日：2022-06-16
申请号：US17545467
申请日：2021-12-08
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Yohei SHIOKAWA , Yugo ISHITANI , Kosuke HAMANAKA , Eiji KOMURA
Abstract: The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.
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公开(公告)号：US20240074326A1
公开(公告)日：2024-02-29
申请号：US18280321
申请日：2021-03-12
Applicant: TDK CORPORATION
Inventor： Yugo ISHITANI , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a laminated body having a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer, a first wiring connected to the laminated body, a sidewall insulating layer configured to cover at least a part of a side surface of the laminated body, a first electrode connected to a side of the laminated body opposite to the first wiring, and a second electrode and a third electrode provided on both sides of the laminated body with the sidewall insulating layer sandwiched therebetween, sandwiching the laminated body, and connected to the first wiring.
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公开(公告)号：US20240407176A1
公开(公告)日：2024-12-05
申请号：US18712336
申请日：2021-11-24
Applicant: TDK Corporation
Inventor： Yohei SHIOKAWA , Yugo ISHITANI , Kosuke HAMANAKA
Abstract: A magnetization rotation element includes a spin-orbit torque wiring and a first ferromagnetic layer connected to the spin-orbit torque wiring, wherein the spin-orbit torque wiring has a first layer and a second layer, the first layer is closer to the first ferromagnetic layer than the second layer, the first layer has a negative spin Hall angle, and the second layer has a positive spin Hall angle.
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Patent Agency Ranking
公开(公告)号：US20190074123A1
公开(公告)日：2019-03-07
申请号：US16101949
申请日：2018-08-13
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Yugo ISHITANI , Keita SUDA
Abstract: Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.
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公开(公告)号：US20240385263A1
公开(公告)日：2024-11-21
申请号：US18710841
申请日：2021-11-19
Applicant: TDK CORPORATION
Inventor： Yohei SHIOKAWA , Yugo ISHITANI , Kosuke HAMANAKA
Abstract: This magnetization rotational element includes a spin-orbit torque wiring, a first ferromagnetic layer connected to the spin-orbit torque wiring, and a wiring connected to the spin-orbit torque wiring at a position different from that of the first ferromagnetic layer, wherein the spin-orbit torque wiring and the wiring each contain nitrogen, and the spin-orbit torque wiring and the wiring differ from each other in nitrogen content.
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公开(公告)号：US20230389442A1
公开(公告)日：2023-11-30
申请号：US18232941
申请日：2023-08-11
Applicant: TDK CORPORATION
Inventor： Yugo ISHITANI , Tomoyuki SASAKI , Yohei SHIOKAWA
CPC classification number: H10N50/10 , G11C11/161 , G11C11/1675 , G11C11/1673 , H10B61/22 , H10N50/01 , H10N50/80 , H10N50/85
Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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公开(公告)号：US20210167278A1
公开(公告)日：2021-06-03
申请号：US17104931
申请日：2020-11-25
Applicant: TDK CORPORATION
Inventor： Yugo ISHITANI , Tomoyuki SASAKI , Yohei SHIOKAWA
Abstract: A magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer which is located in a first direction with respect to the spin-orbit torque wiring and in which spins are injected from the spin-orbit torque wiring. The spin-orbit torque wiring has a plurality of spin generation layers and insertion layers located between the plurality of spin generation layers in the first direction. The insertion layers have a lower electrical resistivity than the spin generation layers.
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公开(公告)号：US20190074124A1
公开(公告)日：2019-03-07
申请号：US16110846
申请日：2018-08-23
Applicant: TDK CORPORATION
Inventor： Yugo ISHITANI , Tomoyuki SASAKI
Abstract: A spin current magnetization rotational element is provided in which deterioration in the degree of integration is prevented from being caused and a magnetization rotation can be easily realized. A spin current magnetization rotational element includes a spin-orbit torque wiring which extends in a first direction, a first ferromagnetic layer which is laminated in a second direction intersecting the first direction; and a first magnetic field applying layer which is disposed to be separated from the first ferromagnetic layer in the first direction and configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer to the first ferromagnetic layer.
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