公开(公告)号：US09493890B2

公开(公告)日：2016-11-15

申请号：US14184085

申请日：2014-02-19

申请人： Technische Universiteit Eindhoven

发明人： Simone Assali ,  Ilaria Zardo ,  Jozef Everardus Maria Haverkort ,  Erik Petrus Antonius Maria Bakkers

IPC分类号： C30B23/04 ,  C30B11/12 ,  C30B23/00 ,  C30B25/00 ,  C30B29/40 ,  C30B29/44 ,  C30B29/60

CPC分类号： C30B11/12 ,  C30B23/007 ,  C30B25/005 ,  C30B29/40 ,  C30B29/44 ,  C30B29/605

摘要： Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

摘要翻译： 提供GaP和III-V GaP合金通过气相外延（VPE）在纤锌矿晶体结构中的生长。 这种材料具有直接的带隙，因此与具有闪锌矿晶体结构且具有间接带隙的常规GaP和GaP合金相比，对于光电子器件更有用。

公开(公告)号：US20140230720A1

公开(公告)日：2014-08-21

申请号：US14184085

申请日：2014-02-19

申请人： Technische Universiteit Eindhoven

发明人： Simone Assali ,  Ilaria Zardo ,  Jozef Everardus Maria Haverkort ,  Erik Petrus Antonius Maria Bakkers

IPC分类号： C30B11/12 ,  C30B25/00 ,  C30B23/00

CPC分类号： C30B11/12 ,  C30B23/007 ,  C30B25/005 ,  C30B29/40 ,  C30B29/44 ,  C30B29/605

摘要： Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

摘要翻译： 提供GaP和III-V GaP合金通过气相外延（VPE）在纤锌矿晶体结构中的生长。 这种材料具有直接的带隙，因此与具有闪锌矿晶体结构且具有间接带隙的常规GaP和GaP合金相比，对于光电子器件更有用。

公开(公告)号：US12065601B2

公开(公告)日：2024-08-20

申请号：US17431356

申请日：2020-02-18

申请人： TECHNISCHE UNIVERSITEIT EINDHOVEN

发明人： Silvana Botti ,  Friedhelm Bechstedt ,  Jozef Everardus Maria Haverkort ,  Erik Petrus Antonius Maria Bakkers ,  Elham Fadaly ,  Alain Dijkstra

IPC分类号： C09K11/66 ,  B82Y20/00 ,  C01B33/06 ,  H01L31/028 ,  H01L31/036 ,  H01L33/18 ,  H01L33/34 ,  H01S5/34

CPC分类号： C09K11/666 ,  C01B33/06 ,  B82Y20/00 ,  C01P2002/76 ,  C01P2004/03 ,  H01L31/028 ,  H01L31/036 ,  H01L33/18 ,  H01L33/34 ,  H01S5/3427

摘要： The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si1−xGex compound material, said Hex-Si1−xGex compound material having a direct band gap for emitting light.
The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S1−xGex compound material, said Hex-Si1−xGex compound material having a direct band gap for absorbing light.