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1.
公开(公告)号:US10727852B2
公开(公告)日:2020-07-28
申请号:US16555265
申请日:2019-08-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sovan Ghosh , Amal Kumar Kundu , Janakiraman Seetharaman
Abstract: A comparator circuit includes a first transistor configured to receive a first input and a second transistor configured to receive a second input. The comparator circuit further includes a third transistor coupled to a terminal of each of the first and second transistors. The third transistor is configured to be controlled by a first control signal. A gate of a fifth transistor is coupled to a terminal of a fourth transistor at a first node and a gate of the fourth transistor is coupled to a terminal of the fifth transistor at a second node. A sixth transistor is coupled between the first and fourth transistors. A seventh transistor is coupled between the second and fifth transistors. A gate of the sixth transistor and a gate of the seventh transistor are coupled together at a fixed voltage level.
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公开(公告)号:US10446414B2
公开(公告)日:2019-10-15
申请号:US15853345
申请日:2017-12-22
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H01L21/56 , H01L23/29 , H01L23/495 , C08G59/18 , H01L23/64 , H01L23/522 , H01L23/00 , H01L23/50
Abstract: A semiconductor package includes an integrated circuit formed on a semiconductor substrate. A stress buffer layer is provided on the integrated circuit. Further, a mold compound is provided on a surface of the stress buffer layer opposite the integrated circuit. The mold compound comprises a resin. The resin includes filler particles. The filler particles have multiple sizes with the largest of the particles having a size between 5 microns and 32 microns.
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公开(公告)号:US20200043753A1
公开(公告)日:2020-02-06
申请号:US16653536
申请日:2019-10-15
Applicant: Texas Instruments Incorporated
IPC: H01L21/56 , H01L23/29 , H01L23/495 , C08G59/18 , H01L23/64 , H01L23/522 , H01L23/00 , H01L23/50 , H01L23/31
Abstract: A semiconductor package includes an integrated circuit formed on a semiconductor substrate. A stress buffer layer is provided on the integrated circuit. Further, a mold compound is provided on a surface of the stress buffer layer opposite the integrated circuit. The mold compound comprises a resin. The resin includes filler particles. The filler particles have multiple sizes with the largest of the particles having a size between 5 microns and 32 microns.
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公开(公告)号:US09602084B2
公开(公告)日:2017-03-21
申请号:US14966616
申请日:2015-12-11
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: G01R23/02 , H03K3/037 , G01R19/165
CPC classification number: H03K3/037 , G01R19/1659 , H03K3/0231
Abstract: Frequency detector and oscillator circuits are disclosed. Example frequency detector and oscillator circuits disclosed herein include a current approximation circuit coupled to an external clock operating at a target frequency. In some examples, the current approximation circuit is configured to determine a magnitude of a first current to charge a capacitor to reach a reference voltage during a first set of clock cycles generated by the external clock. In some examples, the current approximation circuit is further configured to generate an output current based on the magnitude of the first current and to use the output current to produce a comparator output. In some examples, the frequency detector and oscillator circuits further include a latching circuit coupled to receive the comparator output from the current approximation circuit. In some such examples, the latching circuit is configured to generate oscillating signals at the target frequency based on the comparator output.
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5.
公开(公告)号:US10447290B2
公开(公告)日:2019-10-15
申请号:US15837040
申请日:2017-12-11
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sovan Ghosh , Amal Kumar Kundu , Janakiraman Seetharaman
Abstract: A comparator circuit includes a first transistor configured to receive a first input and a second transistor configured to receive a second input. The comparator circuit further includes a third transistor coupled to a terminal of each of the first and second transistors. The third transistor is configured to be controlled by a first control signal. A gate of a fifth transistor is coupled to a terminal of a fourth transistor at a first node and a gate of the fourth transistor is coupled to a terminal of the fifth transistor at a second node. A sixth transistor is coupled between the first and fourth transistors. A seventh transistor is coupled between the second and fifth transistors. A gate of the sixth transistor and a gate of the seventh transistor are coupled together at a fixed voltage level.
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公开(公告)号:US20160308516A1
公开(公告)日:2016-10-20
申请号:US14966616
申请日:2015-12-11
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H03K3/037 , G01R19/165
CPC classification number: H03K3/037 , G01R19/1659 , H03K3/0231
Abstract: Frequency detector and oscillator circuits are disclosed. Example frequency detector and oscillator circuits disclosed herein include a current approximation circuit coupled to an external clock operating at a target frequency. In some examples, the current approximation circuit is configured to determine a magnitude of a first current to charge a capacitor to reach a reference voltage during a first set of clock cycles generated by the external clock. In some examples, the current approximation circuit is further configured to generate an output current based on the magnitude of the first current and to use the output current to produce a comparator output. In some examples, the frequency detector and oscillator circuits further include a latching circuit coupled to receive the comparator output from the current approximation circuit. In some such examples, the latching circuit is configured to generate oscillating signals at the target frequency based on the comparator output.
Abstract translation: 公开了频率检测器和振荡器电路。 本文公开的示例性频率检测器和振荡器电路包括耦合到以目标频率工作的外部时钟的电流近似电路。 在一些示例中,电流近似电路被配置为在由外部时钟产生的第一组时钟周期期间确定用于对电容器充电以达到参考电压的第一电流的幅度。 在一些示例中,电流近似电路还被配置为基于第一电流的幅度产生输出电流并且使用输出电流来产生比较器输出。 在一些示例中,频率检测器和振荡器电路还包括耦合以从电流近似电路接收比较器输出的锁存电路。 在一些这样的示例中,锁存电路被配置为基于比较器输出以目标频率产生振荡信号。
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公开(公告)号:US11139178B2
公开(公告)日:2021-10-05
申请号:US16653536
申请日:2019-10-15
Applicant: Texas Instruments Incorporated
IPC: H01L21/56 , H01L23/29 , H01L23/495 , C08G59/18 , H01L23/64 , H01L23/522 , H01L23/00 , H01L23/50 , H01L23/31
Abstract: A semiconductor package includes an integrated circuit formed on a semiconductor substrate. A stress buffer layer is provided on the integrated circuit. Further, a mold compound is provided on a surface of the stress buffer layer opposite the integrated circuit. The mold compound comprises a resin. The resin includes filler particles. The filler particles have multiple sizes with the largest of the particles having a size between 5 microns and 32 microns.
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8.
公开(公告)号:US11095300B2
公开(公告)日:2021-08-17
申请号:US16904604
申请日:2020-06-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sovan Ghosh , Amal Kumar Kundu , Janakiraman Seetharaman
Abstract: A comparator circuit includes a first transistor configured to receive a first input and a second transistor configured to receive a second input. The comparator circuit further includes a third transistor coupled to a terminal of each of the first and second transistors. The third transistor is configured to be controlled by a first control signal. A gate of a fifth transistor is coupled to a terminal of a fourth transistor at a first node and a gate of the fourth transistor is coupled to a terminal of the fifth transistor at a second node. A sixth transistor is coupled between the first and fourth transistors. A seventh transistor is coupled between the second and fifth transistors. A gate of the sixth transistor and a gate of the seventh transistor are coupled together at a fixed voltage level.
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9.
公开(公告)号:US20200321970A1
公开(公告)日:2020-10-08
申请号:US16904604
申请日:2020-06-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Sovan Ghosh , Amal Kumar Kundu , Janakiraman Seetharaman
Abstract: A comparator circuit includes a first transistor configured to receive a first input and a second transistor configured to receive a second input. The comparator circuit further includes a third transistor coupled to a terminal of each of the first and second transistors. The third transistor is configured to be controlled by a first control signal. A gate of a fifth transistor is coupled to a terminal of a fourth transistor at a first node and a gate of the fourth transistor is coupled to a terminal of the fifth transistor at a second node. A sixth transistor is coupled between the first and fourth transistors. A seventh transistor is coupled between the second and fifth transistors. A gate of the sixth transistor and a gate of the seventh transistor are coupled together at a fixed voltage level.
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