Abstract:
An integrated circuit package and methods for packaging an integrated circuit. In one example, a method for packaging an integrated circuit includes connecting input/output pads of a first die to terminals of a lead frame via palladium coated copper wires. An oxygen plasma is applied to the first die and the palladium coated copper wires. The first die and the palladium coated copper wires are encapsulated in a mold compound after application of the oxygen plasma.
Abstract:
An integrated circuit containing a crack deflecting scribe seal which separates an interior region of the integrated circuit from a scribeline immediately outside the integrated circuit and a method of forming the same. The crack deflecting scribe seal includes continuous metal layers and continuous contacts and continuous vias between the continuous metal layers. The continuous metal layers do not extend past the continuous contacts and continuous vias. The continuous contacts and continuous vias are recessed from edges of the underlying continuous metal layers on the scribeline side of the scribe seal, providing an angled outer surface on the scribe seal which may desirably terminate crack propagation or deflect crack propagation upward to a top surface of the scribeline or the crack deflecting scribe seal.
Abstract:
An integrated circuit and methods for packaging the integrated circuit. In one example, a method for packaging an integrated circuit includes connecting input/output pads of a first integrated circuit die to terminals of a lead frame via palladium coated copper wires. An oxygen plasma is applied to the first integrated circuit die and the palladium coated copper wires. The first integrated circuit die and the palladium coated copper wires are encapsulated in a mold compound after application of the oxygen plasma.
Abstract:
In some examples, a multi-chip module (MCM), comprises a first and a second die-attach pad (DAP); a first die comprising a first set of microelectronic devices; a second die comprising a first capacitor and a second capacitor; and a third die comprising a second set of microelectronic devices, where the first and second dies are positioned on the first DAP, and the third die is positioned on the second DAP. The first set of microelectronic devices couples to the first capacitor via a first inter-die connection and the second set of microelectronic devices couples to the second capacitor via a second inter-die connection.