CRACK DEFLECTOR STRUCTURE FOR IMPROVING SEMICONDUCTOR DEVICE ROBUSTNESS AGAINST SAW-INDUCED DAMAGE
    2.
    发明申请
    CRACK DEFLECTOR STRUCTURE FOR IMPROVING SEMICONDUCTOR DEVICE ROBUSTNESS AGAINST SAW-INDUCED DAMAGE 审中-公开
    用于改善半导体器件的破坏偏转器结构对SAW感应损伤的鲁棒性

    公开(公告)号:US20150061081A1

    公开(公告)日:2015-03-05

    申请号:US14536897

    申请日:2014-11-10

    CPC classification number: H01L23/562 H01L23/585 H01L2924/0002 H01L2924/00

    Abstract: An integrated circuit containing a crack deflecting scribe seal which separates an interior region of the integrated circuit from a scribeline immediately outside the integrated circuit and a method of forming the same. The crack deflecting scribe seal includes continuous metal layers and continuous contacts and continuous vias between the continuous metal layers. The continuous metal layers do not extend past the continuous contacts and continuous vias. The continuous contacts and continuous vias are recessed from edges of the underlying continuous metal layers on the scribeline side of the scribe seal, providing an angled outer surface on the scribe seal which may desirably terminate crack propagation or deflect crack propagation upward to a top surface of the scribeline or the crack deflecting scribe seal.

    Abstract translation: 一种集成电路,其包含将集成电路的内部区域与紧邻集成电路外部的划片线分隔开的裂纹偏转划线密封件及其形成方法。 裂纹偏转划线密封件包括连续金属层和连续金属层之间的连续接触和连续通孔。 连续金属层不延伸经过连续接触和连续通孔。 连续接触和连续的通孔从划线密封的划线侧的下面的连续金属层的边缘凹陷,在划线密封件上提供成角度的外表面,其可以期望地终止裂纹扩展或将裂纹传播向上偏转到顶部表面 划线或裂纹偏转划痕。

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