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    Repeatable fast turn-on of transistors
    1.
    发明授权
    Repeatable fast turn-on of transistors 有权

    公开(公告)号：US11411424B2

    公开(公告)日：2022-08-09

    申请号：US16858335

    申请日：2020-04-24

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Huawen Jin ,  Kenneth J. Maggio ,  Thomas James Jung, Jr.

    IPC: H02J7/00 ,  H02J7/34 ,  H02M3/07 ,  H03K17/0412 ,  H03K17/041 ,  H02M1/00

    Abstract: This disclosure relates to a system that includes a boost circuit comprising a boost capacitor. The boost circuit is configured to provide a boost voltage at a first terminal of the boost capacitor by increasing the boost voltage at the first terminal to exceed a target voltage for a given charge cycle. A boost switch is configured to supply the boost voltage from the first terminal to a charge node for turning on a transistor, which is coupled to the charge node, based on a boost signal during the given charge cycle. A pull-down circuit is configured to control discharge of the charge node to a clamp voltage that is sufficient to turn off the transistor for the given charge cycle and to facilitate charging of the charge node in a next charge cycle.

    Energy storage element control circuit
    2.
    发明授权
    Energy storage element control circuit 有权

    公开(公告)号：US10784849B1

    公开(公告)日：2020-09-22

    申请号：US16555563

    申请日：2019-08-29

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Bradford Lawrence Hunter ,  Kenneth J. Maggio ,  Christopher Lee Betty

    IPC: H03K17/0412 ,  H03K17/16

    Abstract: An energy storage element control circuit includes a charge transistor having a first node adapted to be coupled to an output node of the energy storage element control circuit and a second node adapted to be coupled to a terminal of an energy storage element. The energy storage control circuit also includes a boot capacitor having a first node and a second node. The energy storage element further includes a comparator that includes a first input node coupled to the first node of the charge transistor and a second input node adapted to be coupled to the terminal of the energy storage element. The comparator also includes an output node.

    CMOS COMPATIBLE THERMOPILE WITH LOW IMPEDANCE CONTACT
    3.
    发明申请
    CMOS COMPATIBLE THERMOPILE WITH LOW IMPEDANCE CONTACT 有权
    CMOS兼容低阻抗热电偶

    公开(公告)号：US20150349023A1

    公开(公告)日：2015-12-03

    申请号：US14292281

    申请日：2014-05-30

    Applicant: Texas Instruments Incorporated

    Inventor： Jeffrey R. Debord ,  Henry Litzmann Edwards ,  Kenneth J. Maggio

    IPC: H01L27/16 ,  H01L21/768 ,  H01L21/8238 ,  H01L35/04 ,  H01L27/092

    CPC classification number: H01L27/16 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76879 ,  H01L21/823878 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/0617 ,  H01L27/092 ,  H01L35/04 ,  H01L35/30 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming active areas which provide transistor active areas for an NMOS transistor and a PMOS transistor of the CMOS transistors and provide n-type thermoelectric elements and p-type thermoelectric elements of the embedded thermoelectric device. Stretch contacts with lateral aspect ratios greater than 4:1 are formed over the n-type thermoelectric elements and p-type thermoelectric elements to provide electrical and thermal connections through metal interconnects to a thermal node of the embedded thermoelectric device. The stretch contacts are formed by forming contact trenches in a dielectric layer, filling the contact trenches with contact metal and subsequently removing the contact metal from over the dielectric layer. The stretch contacts are formed concurrently with contacts to the NMOS and PMOS transistors.

    Abstract translation: 可以通过形成有源区域来形成包含CMOS晶体管和嵌入式热电装置的集成电路，该有源区域为CMOS晶体管的NMOS晶体管和PMOS晶体管提供晶体管有源区，并提供n型热电元件和p型热电元件 嵌入式热电装置。 在n型热电元件和p型热电元件上形成横截面比大于4:1的拉伸接触，以通过金属互连提供到嵌入式热电器件的热节点的电连接和热连接。 拉伸接触通过在电介质层中形成接触沟槽，用接触金属填充接触沟槽并随后从电介质层上方去除接触金属而形成。 拉伸触点与NMOS和PMOS晶体管的触点同时形成。

    CMOS compatible thermopile with low impedance contact
    5.
    发明授权
    CMOS compatible thermopile with low impedance contact 有权
    CMOS兼容热电堆，具有低阻抗接触

    公开(公告)号：US09437652B2

    公开(公告)日：2016-09-06

    申请号：US14292281

    申请日：2014-05-30

    Applicant: Texas Instruments Incorporated

    Inventor： Jeffrey R. Debord ,  Henry Litzmann Edwards ,  Kenneth J. Maggio

    IPC: H01L27/16 ,  H01L35/04 ,  H01L21/768 ,  H01L27/06 ,  H01L27/092 ,  H01L21/8238

    CPC classification number: H01L27/16 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76879 ,  H01L21/823878 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/0617 ,  H01L27/092 ,  H01L35/04 ,  H01L35/30 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming active areas which provide transistor active areas for an NMOS transistor and a PMOS transistor of the CMOS transistors and provide n-type thermoelectric elements and p-type thermoelectric elements of the embedded thermoelectric device. Stretch contacts with lateral aspect ratios greater than 4:1 are formed over the n-type thermoelectric elements and p-type thermoelectric elements to provide electrical and thermal connections through metal interconnects to a thermal node of the embedded thermoelectric device. The stretch contacts are formed by forming contact trenches in a dielectric layer, filling the contact trenches with contact metal and subsequently removing the contact metal from over the dielectric layer. The stretch contacts are formed concurrently with contacts to the NMOS and PMOS transistors.

    Abstract translation: 可以通过形成有源区域来形成包含CMOS晶体管和嵌入式热电装置的集成电路，该有源区域为CMOS晶体管的NMOS晶体管和PMOS晶体管提供晶体管有源区，并提供n型热电元件和p型热电元件 嵌入式热电装置。 在n型热电元件和p型热电元件上形成横截面比大于4:1的拉伸接触，以通过金属互连提供到嵌入式热电器件的热节点的电连接和热连接。 拉伸接触通过在电介质层中形成接触沟槽，用接触金属填充接触沟槽并随后从电介质层上方去除接触金属而形成。 拉伸触点与NMOS和PMOS晶体管的触点同时形成。

    Reverse voltage condition protection in a power supply system
    6.
    发明授权
    Reverse voltage condition protection in a power supply system 有权
    电源系统中的反向电压状态保护

    公开(公告)号：US09088158B2

    公开(公告)日：2015-07-21

    申请号：US14097990

    申请日：2013-12-05

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Kenneth J. Maggio ,  Umar Jameer Lyles ,  John H. Carpenter, Jr. ,  J. Randall Cooper ,  Vinod Mukundagiri

    IPC: H02H3/00 ,  H02H3/18

    CPC classification number: H02H3/18 ,  H02H3/003

    Abstract: One embodiment includes a power system. The system includes a power switch device that is activated to provide an output voltage to a load in response to an input voltage. The power switch device includes a control terminal and a bulk connection. The system also includes a reverse voltage control circuit configured to passively couple the input voltage to one of the control terminal and the bulk connection in response to a reverse voltage condition in which an amplitude of the input voltage becomes negative. The system further includes an output shutoff circuit configured to passively couple the output voltage to a neutral-voltage rail during the reverse voltage condition.

    Abstract translation: 一个实施例包括电力系统。 该系统包括电源开关装置，其被激活以响应于输入电压向负载提供输出电压。 电源开关装置包括控制端子和大容量连接。 该系统还包括反向电压控制电路，其被配置为响应于输入电压的幅度变为负的反向电压状态而被动地将输入电压耦合到控制端子和体连接中的一个。 该系统还包括一个输出切断电路，配置成在反向电压条件期间将输出电压无功耦合到中性电压轨。

    CMOS COMPATIBLE THERMOPILE WITH LOW IMPEDANCE CONTACT
    8.
    发明申请
    CMOS COMPATIBLE THERMOPILE WITH LOW IMPEDANCE CONTACT 审中-公开
    CMOS兼容低阻抗热电偶

    公开(公告)号：US20160372516A1

    公开(公告)日：2016-12-22

    申请号：US15255243

    申请日：2016-09-02

    Applicant: TEXAS INSTRUMENTS INCORPORATED

    Inventor： Jeffrey R. Debord ,  Henry Litzmann Edwards ,  Kenneth J. Maggio

    IPC: H01L27/16 ,  H01L23/522 ,  H01L21/8238 ,  H01L21/768 ,  H01L35/30 ,  H01L35/04

    CPC classification number: H01L27/16 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76879 ,  H01L21/823878 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/0617 ,  H01L27/092 ,  H01L35/04 ,  H01L35/30 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In described examples, an integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming active areas which provide transistor active areas for an NMOS transistor and a PMOS transistor of the CMOS transistors and provide n-type thermoelectric elements and p-type thermoelectric elements of the embedded thermoelectric device. Stretch contacts with lateral aspect ratios greater than 4:1 are formed over the n-type thermoelectric elements and p-type thermoelectric elements to provide electrical and thermal connections through metal interconnects to a thermal node of the embedded thermoelectric device. The stretch contacts are formed by forming contact trenches in a dielectric layer, filling the contact trenches with contact metal and subsequently removing the contact metal from over the dielectric layer. The stretch contacts are formed concurrently with contacts to the NMOS and PMOS transistors.

    Abstract translation: 在所述实施例中，可以通过形成有源区域来形成包含CMOS晶体管和嵌入式热电装置的集成电路，该有源区域为CMOS晶体管的NMOS晶体管和PMOS晶体管提供晶体管有源区，并提供n型热电元件和p型 嵌入式热电元件的热电元件。 在n型热电元件和p型热电元件上形成横截面比大于4:1的拉伸接触，以通过金属互连提供到嵌入式热电器件的热节点的电连接和热连接。 拉伸接触通过在电介质层中形成接触沟槽，用接触金属填充接触沟槽并随后从电介质层上方去除接触金属而形成。 拉伸触点与NMOS和PMOS晶体管的触点同时形成。

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