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公开(公告)号：US20220221353A1
公开(公告)日：2022-07-14
申请号：US17538782
申请日：2021-11-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Tobias Bernhard FRITZ , Baher S. HAROUN , Benjamin Stassen COOK , Sreenivasan Kalyani KODURI , Michael SZELONG , Ernst MUELLNER
IPC: G01L1/18 , H01L23/31 , H01L23/495
Abstract: A force sensor including a semiconductor die, and a die pad coupled to the semiconductor die, the semiconductor die configured to detect a force in the die pad. In addition, the force sensor includes a mold compound covering the semiconductor die and having an outer perimeter, a first side, and a second side opposite the first side, the outer perimeter extending between the first side and the second side, the die pad exposed out of the mold compound along the first side. Further, the force sensor includes a mounting frame engaged with the die pad along the second side of the mold compound, the mounting frame including multiple mounting pads extended outward in multiple directions from the outer perimeter.
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公开(公告)号：US20220173095A1
公开(公告)日：2022-06-02
申请号：US17675066
申请日：2022-02-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Michael SZELONG , James Robert TODD , Tobias Bernhard FRITZ , Ralf Peter BREDERLOW
Abstract: An integrated circuit comprises a semiconductor substrate having a surface. A lateral resistor is arranged in a first plane parallel to the surface of the substrate. A vertical reference resistor comprises a layer arranged in a second plane parallel to the surface of the substrate and deeper than the first plane. This layer is doped to promote current flow in the second plane. The vertical reference resistor further comprises a first trench and a second trench coupled between the layer and the surface of the substrate. The first and second trenches are arranged in a vertical direction orthogonal to the first and the second planes and are doped to impede current flow in the vertical direction. A cross-section of the first and second trenches is two-fold rotationally symmetric around the vertical direction, and the lateral resistor and the first and second trenches have the same temperature coefficient.
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公开(公告)号：US20220223486A1
公开(公告)日：2022-07-14
申请号：US17538850
申请日：2021-11-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Tobias Bernhard FRITZ , Baher S. HAROUN , Benjamin Stassen COOK , Michael SZELONG , Ernst MUELLNER , Jeronimo SEGOVIA-FERNANDEZ
IPC: H01L23/13 , H01L23/31 , H01L23/495 , G01L1/18
Abstract: An example semiconductor package includes a semiconductor die configured to detect a force. In addition, the semiconductor package includes a mold compound covering the semiconductor die. Further, the semiconductor package includes an engagement surface including a pattern of projections adapted to engage with a mounting surface on a member of interest.
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公开(公告)号：US20200227408A1
公开(公告)日：2020-07-16
申请号：US16428682
申请日：2019-05-31
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Michael SZELONG , James Robert TODD , Tobias Bernhard FRITZ , Ralf Peter BREDERLOW
Abstract: An integrated circuit comprises a semiconductor substrate having a surface. A lateral resistor is arranged in a first plane parallel to the surface of the substrate. A vertical reference resistor comprises a layer arranged in a second plane parallel to the surface of the substrate and deeper than the first plane. This layer is doped to promote current flow in the second plane. The vertical reference resistor further comprises a first trench and a second trench coupled between the layer and the surface of the substrate. The first and second trenches are arranged in a vertical direction orthogonal to the first and the second planes and are doped to impede current flow in the vertical direction. A cross-section of the first and second trenches is two-fold rotationally symmetric around the vertical direction, and the lateral resistor and the first and second trenches have the same temperature coefficient.
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