公开(公告)号：US20230184713A1

公开(公告)日：2023-06-15

申请号：US18066206

申请日：2022-12-14

Applicant: Texas Instruments Incorporated

Inventor： Sebastian Meier ,  Ernst Muellner ,  Helmut Rinck ,  Scott Summerfelt ,  Tobias Fritz ,  Baher Haroun

IPC: G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4146

Abstract: In some examples, an integrated circuit comprises: a semiconductor die including a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a metallization structure encapsulated in the dielectric layer, in which the semiconductor substrate includes a transistor having a first current terminal, a second current terminal, and a channel region between the first and second current terminals, and the dielectric layer has a sensing side facing away from the semiconductor substrate; an insulation layer on the sensing side; a sensor terminal on the sensing side and over the channel region; and a restriction structure including an opening and a rigid silicon-based fluidic structure, in which the silicon-based fluidic structure is on the sensing side and encapsulates a fluid cavity on the sensing side, the sensor terminal is in the fluid cavity, and the restriction structure is configured to transport a fluid by microfluidic diffusion.

公开(公告)号：US20230068451A1

公开(公告)日：2023-03-02

申请号：US17461235

申请日：2021-08-30

Applicant: Texas Instruments Incorporated

Inventor： Bichoy Bahr ,  Adam Fruehling ,  Scott Summerfelt

IPC: H01H37/32 ,  H01H37/04 ,  H01H37/64

Abstract: An example microelectromechanical structures (MEMS) switch includes a body having a first end and a second end opposite the first end. The body extends from a base at the first end and has a first width. The MEMS switch further includes a bridge extending laterally from the body at the second end, and a spine extending between the bridge and the base. The spine has a second width smaller than the first width. At least one of the spine or the body includes a first material with a first thermal coefficient and a second material with a second thermal coefficient different from the first thermal coefficient.

公开(公告)号：US09304283B2

公开(公告)日：2016-04-05

申请号：US14533967

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Neng Jiang ,  Scott Summerfelt ,  Thomas Warren Lassiter ,  Nayeemuddin Mohammed ,  Mary Alyssa Drummond Roby

IPC: G02B7/09 ,  H01L21/3213 ,  H04N5/232 ,  C23F1/00

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.

Abstract translation: 一种装置包括由绝缘材料（例如压电材料）隔开的第一和第二电极。 该装置还包括在第一和第二电极上的保护层。 保护层具有暴露第一电极的一部分的第一开口和暴露第二电极的一部分的第二开口。 该装置还包括至少部分地在第一开口内并且电耦合到第一电极的第一电接触。 此外，该装置包括至少部分地在第二开口内并电耦合到第二电极的第二电接触。 第一和第二电触点中的每一个包括一叠金属层。 金属层的叠层包括氮化钛层，氮化钛层上的钛层和氮化钛层和钛层上的铝铜层。

公开(公告)号：US20240274388A1

公开(公告)日：2024-08-15

申请号：US18168959

申请日：2023-02-14

Applicant: Texas Instruments Incorporated

Inventor： Adam Fruehling ,  Scott Summerfelt

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  H01H2203/02 ,  H01H2205/004

Abstract: An apparatus includes a semiconductor structure having a cavity. The apparatus also includes a first electrical terminal on a first cavity side, a second electrical terminal on a second cavity side, and the second electrical terminal including an extension that overlaps part of the cavity. The apparatus also includes a bendable beam extending from the first cavity side and overlapping at least part of the extension. The apparatus also includes an actuator in a periphery of the beam, the actuator configured to generate a fringing electric field that causes the second beam side to move towards the extension in a direction different from the fringing electric field and bend the beam.

公开(公告)号：US20150338604A1

公开(公告)日：2015-11-26

申请号：US14533967

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Neng Jiang ,  Scott Summerfelt ,  Thomas Warren Lassiter ,  Nayeemuddin Mohammed ,  Mary Alyssa Drummond Roby

IPC: G02B7/09 ,  C23F1/00 ,  H04N5/232

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.

Abstract translation: 一种装置包括由绝缘材料（例如压电材料）隔开的第一和第二电极。 该装置还包括在第一和第二电极上的保护层。 保护层具有暴露第一电极的一部分的第一开口和暴露第二电极的一部分的第二开口。 该装置还包括至少部分地在第一开口内并且电耦合到第一电极的第一电接触。 此外，该装置包括至少部分地在第二开口内并电耦合到第二电极的第二电接触。 第一和第二电触点中的每一个包括一叠金属层。 金属层的叠层包括氮化钛层，氮化钛层上的钛层和氮化钛层和钛层上的铝铜层。

公开(公告)号：US20240274387A1

公开(公告)日：2024-08-15

申请号：US18169013

申请日：2023-02-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Adam Fruehling ,  Scott Summerfelt

IPC: H01H59/00

CPC classification number: H01H59/00

Abstract: An apparatus includes a semiconductor structure having a cavity, a first terminal on a first cavity side, and a second terminal on a second cavity side. The second terminal includes an extension that overlaps part of the cavity. The extension includes a first contact. The apparatus includes a bendable beam extending from the first cavity side and includes a metal layer coupled to the first terminal. The beam has opposite first and second beam sides. The first beam side couples to the first terminal, and the second beam side faces the second cavity side. The beam includes a second contact that overlaps at least a portion of the extension and faces the first contact. An actuator is configured to bend the bendable beam around a first axis, and bend the bendable beam around a second axis orthogonal to the first axis by moving the second beam side against the extension.