公开(公告)号：US20160343579A1

公开(公告)日：2016-11-24

申请号：US15106889

申请日：2014-12-22

Applicant: THE CHEMOURS COMPANY FC, LLC

Inventor： SHENG PENG ,  GARY LOH ,  YOSHIMASA OOSAKI

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  C09K13/00 ,  C09K13/08 ,  C23C16/4405 ,  C23G5/00 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31144 ,  Y02C20/30 ,  Y02P70/605

Abstract: The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.

Abstract translation: 本发明涉及用作CVD半导体制造气体的氟烯烃组合物，特别是用于蚀刻应用，包括通过使用活性气体混合物从化学气相沉积室的内部除去表面沉积物的方法，以及蚀刻半导体表面的方法 。