公开(公告)号：US20160343579A1

公开(公告)日：2016-11-24

申请号：US15106889

申请日：2014-12-22

Applicant: THE CHEMOURS COMPANY FC, LLC

Inventor： SHENG PENG ,  GARY LOH ,  YOSHIMASA OOSAKI

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  C09K13/00 ,  C09K13/08 ,  C23C16/4405 ,  C23G5/00 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31144 ,  Y02C20/30 ,  Y02P70/605

Abstract: The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.

Abstract translation: 本发明涉及用作CVD半导体制造气体的氟烯烃组合物，特别是用于蚀刻应用，包括通过使用活性气体混合物从化学气相沉积室的内部除去表面沉积物的方法，以及蚀刻半导体表面的方法 。

公开(公告)号：US20160284523A1

公开(公告)日：2016-09-29

申请号：US14777865

申请日：2014-03-28

Applicant: The Chemours Company FC, LLC

Inventor： GARY LOH ,  MARIO JOSEPH NAPPA ,  HAO-CHUN LEE ,  TAI-CHEN LEE

IPC: H01J37/32 ,  C11D7/30 ,  C09K13/00 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C09K13/00 ,  C11D7/30 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32853 ,  H01J2237/334

Abstract: The present invention relates to hydrofluorolefin compositions useful for removing surface deposits in CVD chambers, and relates to methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture created by activating a gas mixture in the chamber or in a remote chamber, where the gas mixture comprises a hydrofluorolefin.

Abstract translation: 本发明涉及用于除去CVD室中的表面沉积物的氢氟烯烃组合物，并且涉及通过使用通过活化气室中的气体混合物或在室内或 远程室，其中气体混合物包含氢氟烯烃。