公开(公告)号：US20210104504A1

公开(公告)日：2021-04-08

申请号：US16325709

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  Charles Forman ,  John T. Leonard ,  SeungGeun Lee ,  Dan Cohen ,  Robert M. Farrell ,  Michael Iza ,  Burhan Saifaddin ,  Abdullah Almogbel ,  Humberto Foronda ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L25/16 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

公开(公告)号：US11532922B2

公开(公告)日：2022-12-20

申请号：US16652282

申请日：2018-10-02

Applicant: The Regents of the University of California

Inventor： Charles Forman ,  SeungGeun Lee ,  Erin C. Young ,  Jared Kearns ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/02 ,  H01S5/024 ,  H01S5/30 ,  H01S5/343 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/02355 ,  H01S5/32 ,  H01S5/10

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

公开(公告)号：US20200244036A1

公开(公告)日：2020-07-30

申请号：US16652282

申请日：2018-10-02

Applicant: The Regents of the University of California

Inventor： Charles Forman ,  SeungGeun Lee ,  Erin C. Young ,  Jared Kearns ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/022 ,  H01S5/02 ,  H01S5/024 ,  H01S5/183 ,  H01S5/30 ,  H01S5/343

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In-Au bonding. This is the first report of a VCSEL capable of continuous wave operation.