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公开(公告)号：US20190318914A1
公开(公告)日：2019-10-17
申请号：US16378956
申请日：2019-04-09
IPC分类号： H01J37/32
摘要： A processing apparatus that processes an substrate inside a processing container includes a first electrode disposed inside the processing container, the first electrode being configured to mount the substrate, a second electrode disposed so as to face the first electrode, an electric power supply unit configured to apply high frequency power to the first electrode or the second electrode, a coil disposed on a surface opposite to the surface to which the first electrode or the second electrode faces and on a surface of any one of the first electrode and the second electrode, one end of the coil being connected to the any one of the the first electrode and the second electrode, another end of the coil being connected to ground, and an adjusting mechanism configured to control a magnetic field strength of a magnetic field that is from the coil and passes through the coil.
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公开(公告)号：US20150245460A1
公开(公告)日：2015-08-27
申请号：US14630775
申请日：2015-02-25
CPC分类号： H05B7/18 , H01J37/32091 , H01J37/32568 , H01J37/32623
摘要： A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.
摘要翻译： 一种等离子体处理装置，包括：包括侧壁的处理室; 包括下电极并设置在所述处理室中的安装台; 上电极，其设置成在第一方向上面对所述下电极; 高频电源，被配置为向上电极施加用于等离子体产生的高频电力; 用于将处理气体供给到处理室中的气体供给系统; 以及连接到地电位的接地单元。 在安装台和侧壁之间限定第一空间。 在上电极和下电极之间限定第二空间。 接地单元被配置为在第一方向上沿着第一方向延伸到第一空间的第三空间和与第一方向垂直的第二方向上的第二空间沿第一方向独立地从上电极移动。
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公开(公告)号：US20180330930A1
公开(公告)日：2018-11-15
申请号：US15976107
申请日：2018-05-10
发明人： Hiraku MURAKAMI , Masaru ISAGO
摘要： There is provision of a cleaning method of a plasma processing apparatus including a plasma treatment chamber for applying plasma treatment to a substrate. The method includes: insulating a part of the plasma treatment chamber, generating plasma of fluorocarbon gas in the plasma treatment chamber, and removing deposits on a non-plasma surface of a space outside of the plasma treatment chamber, by the plasma of the fluorocarbon gas introduced from the plasma treatment chamber to the outside space.
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公开(公告)号：US20160372308A1
公开(公告)日：2016-12-22
申请号：US15180672
申请日：2016-06-13
发明人： Hiraku MURAKAMI , Nobutaka SASAKI , Shigeru SENZAKI , Takanori BANSE , Hiroshi TSUJIMOTO , Keigo TOYODA
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32477 , H01J37/32504
摘要： Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.
摘要翻译： 公开了一种等离子体处理方法。 该方法包括在等离子体处理装置的处理容器的内壁表面上形成保护膜; 对处理容器内的工件进行处理。 当形成保护膜时，从安装台和处理容器的侧壁之间的空间的上侧供应保护膜形成气体，从而产生等离子体。 当执行处理时，从安装台的上侧供给工件处理气体，从而产生等离子体。
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